Исследование вольт-амперных характеристик светодиодных гетероструктур на основе InAsSb в диапазоне температур 4.2-300 K

The results of a study of the current-voltage characteristics of LED heterostructures with an active region based on InAsSb solid solutions and InAsSb/InAs and InAsSb/InAsSbP quantum wells (QWs) in the temperature range 4.2–300 K are presented. The mechanisms of the carrier transport depending on the temperature and design of the heterostructure was determined. It is shown that the charge transport through the heterostructures is governed by the diffusion and recombination mechanisms at temperatures close to 300 K; in the temperature range 4.2–77 K, the contribution of the tunnelling mechanism was observed. For heterostructure InAs/InAs/InAs0.15Sb0.31P0.54 the additional channel of the carrier transport was determined. It was shown that the presence of 108 QWs InAs0.88Sb0.12/InAs into the active region of the heterostructure led to an increase in the leakage currents through the heterojunction in the whole temperature range, which is probably related to the tunnelling of charge carriers.

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Влияние электронного и дырочного допирования на транспортные характеристики халькогенидных систем

Физика твердого тела ◽

10.21883/ftt.2021.05.50808.269 ◽

2021 ◽

Vol 63 (5) ◽

pp. 606

Author(s):

О.Б. Романова ◽

C.C. Аплеснин ◽

Л.В. Удод

Keyword(s):

Magnetic Field ◽

Electrical Properties ◽

Hall Effect ◽

Charge Carriers ◽

Hall Constant ◽

Temperature Range ◽

Current Voltage ◽

Semiconductor Compounds ◽

Current Voltage Characteristics ◽

Ohmic Conductivity

The electrical properties and the Hall effect in semiconductor compounds Ag0.01Mn0.99S and Tm0.01Mn0.99S have been studied in the temperature range 80–400 K in a magnetic field of 12 kOe. The mechanism of conduction is established, which depends on the type of doping and concentration from the current - voltage characteristics. At the replacement of manganese by silver, the Mott type was found, and the replacement by thulium causes ohmic conductivity. The mobility and type of charge carriers are found from the Hall constant.

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Электрические свойства пленок металлоорганических перовскитов

Физика твердого тела ◽

10.21883/ftt.2019.02.47121.247 ◽

2019 ◽

Vol 61 (2) ◽

pp. 243

Author(s):

А.М. Ершова ◽

М.К. Овезов ◽

И.П. Щербаков ◽

А.Н. Алешин

Keyword(s):

Phase Transitions ◽

Electrical Properties ◽

Orthorhombic Phase ◽

Activation Energies ◽

Charge Carriers ◽

Temperature Range ◽

Current Voltage ◽

Temperature Dependences ◽

Characteristic Points ◽

Current Voltage Characteristics

AbstractThe electrical properties of the films of organometallic perovskites CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 were studied. Current–voltage characteristics for the CH_3NH_3PbBr_3 and CH_3NH_3PbI_3 samples were measured in a temperature range of 300–80 K, from which the temperature dependences of resistivity ρ( T ) having characteristic points of inflection in a range of 160–240 K were determined. The activation energies of charge carriers prior to and after points of inflection were determined. It is assumed that the observed features in the temperature dependences of resistivity (temperature at the points of inflection) correlate with the temperatures of tetragonal-to-orthorhombic phase transitions for two studied organometallic perovskites (CH_3NH_3PbBr_3 and CH_3NH_3PbI_3).

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Temperature dependences of the elektrophysical properties of the solid solution Si1-xSnx (0  x  0.04)

Applied Physics ◽

10.51368/1996-0948/2021-1-63-68 ◽

2021 ◽

pp. 63-68

Keyword(s):

Solid Solution ◽

Space Charge ◽

Solid Solutions ◽

Active Material ◽

Silicon Substrates ◽

Temperature Range ◽

Carrier Transfer ◽

Current Voltage ◽

Temperature Dependences ◽

Current Voltage Characteristics

The current-voltage characteristics of p-Si–n-Si1-xSnx (0  x  0.04) structures have been studied in the temperature range from 293 to 453 K. It was determined that the initial sections of the direct branches of the I–V characteristic at all temperatures are described by the expo-nential dependence of the current on the voltage, and then a quadratic section follows, which is described by the drift mechanism of carrier transfer in the regime of ohmic relaxation of the space charge. We determined the activation energies of two deep levels with values of 0.21 eV and 0.35 eV, which are assigned to interstitial Sn atoms and A-centers, respectively. The prospect of using solid solutions Si1-xSnx (0  x  0.04), obtained on silicon substrates, as an active material in the manufacture of injection diodes is substantiated.

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ELECTROMECHANICAL CHARACTERISTICS OF POLYVINYLIDENE FLUORIDE FOR FLEXIBLE ELECTRONICS

Transactions of the Canadian Society for Mechanical Engineering ◽

10.1139/tcsme-2013-0022 ◽

2013 ◽

Vol 37 (3) ◽

pp. 325-333 ◽

Cited By ~ 5

Author(s):

Wen-Yang Chang ◽

Cheng-Hung Hsu

Keyword(s):

Flexible Electronics ◽

Polyvinylidene Fluoride ◽

Input Voltage ◽

Pvdf Film ◽

Resistive Load ◽

X Ray Diffraction ◽

Leakage Currents ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Stress Cycles

The electromechanical characteristics of PVDF are investigated, including the crystallization, frequency responses, hysteresis, leakage currents, current-voltage characteristics, and fatigue characteristics using X-ray diffraction and an electrometer. Results show that the frequency band of PVDF increases with increasing resistive load and capacitance. The hysteresis area of ΔH slightly increases with increasing input voltage. The magnitude of the current values increases with decreasing delay time at a given drive voltage. PVDF film induced larger degradation when the number of stress cycles was increased to about 105 cumulative cycles.

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Nonlinear Response of a Superconductor of the Bi-Sr-Ca-Cu-O System to an Alternating Magnetic Field in the Superconducting Transition Temperature Range

EPJ Web of Conferences ◽

10.1051/epjconf/201818508005 ◽

2018 ◽

Vol 185 ◽

pp. 08005

Author(s):

Alexander Sergeev ◽

Igor Golev ◽

Victoria Gvozdevskaya ◽

Anastasia Barkalova

Keyword(s):

Magnetic Field ◽

Nonlinear Response ◽

Alternating Magnetic Field ◽

Resistive State ◽

Superconducting Transition ◽

Critical Temperatures ◽

Temperature Range ◽

Nonlinear Properties ◽

Current Voltage ◽

Current Voltage Characteristics

The nonlinear response of the superconductor of the Bi-Sr-Ca-Cu-O system in the temperature range of the superconducting transition under the action of a harmonic alternating magnetic field is experimentally studied. For multiphase superconductors having in their volume regions with distinct critical temperatures, the effect of odd harmonics in the response signal is observed. The contribution of crystallites and the system of weak bonds between the crystallites in the nonlinear response is singled out. It was found that the nonlinear properties of the investigated samples in the resistive state are determined mainly by the nonlinear current-voltage characteristics of the system of weak bonds between the crystallites.

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Metastable Defect Distributions in CIGS Solar Cells and Their Impact on Device Efficiency

MRS Proceedings ◽

10.1557/proc-1012-y04-01 ◽

2007 ◽

Vol 1012 ◽

Cited By ~ 5

Author(s):

Malgorzata Igalson

Keyword(s):

Carrier Transport ◽

Theoretical Calculations ◽

Electrical Characteristics ◽

Current Voltage ◽

Device Efficiency ◽

Current Voltage Characteristics ◽

Cigs Solar Cells ◽

Metastable Effects ◽

The Impact ◽

Metastable Defect

AbstractMetastabilities in the electrical characteristics of CIGS devices are commonly observed phenomena originating from persistent changes of shallow and deep levels distributions within the absorber. We examine characteristic changes induced by voltage bias and light together with their relaxation behavior and interpret them as the consequences of a negative-U type of centers predicted by theoretical calculations of Lany and Zunger. It is shown how the properties of these centers justify a model of p+ layer explaining specific features of light and dark current-voltage characteristics. The discussion showing the impact of various charge distributions on carrier transport is presented. The arguments are provided, that centers responsible for metastable effects are also to blame for majority of photovoltaic losses exhibited in various devices.

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The Influence of the Magnetic Field on the Current-Voltage Characteristics of CuPc Nanowires

Materials Science Forum ◽

10.4028/www.scientific.net/msf.970.75 ◽

2019 ◽

Vol 970 ◽

pp. 75-81

Author(s):

Alexey Zavgorodniy ◽

Aitbek Aimukhanov ◽

Assylbek Zeinidenov ◽

Galina Vavilova

Keyword(s):

Magnetic Field ◽

Carrier Transport ◽

Copper Phthalocyanine ◽

Short Circuit ◽

Short Circuit Current ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Photosensitive Cell ◽

Positively Charged

The role of spin states in the process of charge carrier transport in copper phthalocyanine (CuPc) nanowires has been established. According to the data obtained, CuPc nanowires are in the η-phase. The current-voltage characteristics (IVC) of a photosensitive cell based on CuPc nanowires in a magnetic field are investigated. As a result of experiments, it was found that applying an external magnetic field, the spins of two positively charged polarons are oriented in one direction. The channel of formation of the bipolaron is blocked. As a result, a decrease in the short-circuit current of the photosensitive cell is observed by more than 61%.

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