Fine Structure of Silicon Carbide Transition Bands in the Energy Range 4–35 eV

2017 ◽  
Vol 84 (3) ◽  
pp. 505-507
Author(s):  
V. V. Sobolev ◽  
V. Val. Sobolev ◽  
D. V. Anisimov
2016 ◽  
Vol 23 (2) ◽  
pp. 551-559 ◽  
Author(s):  
Jay D. Bourke ◽  
Christopher T. Chantler ◽  
Yves Joly

A new theoretical approach and computational package,FDMX, for general calculations of X-ray absorption fine structure (XAFS) over an extended energy range within a full-potential model is presented. The final-state photoelectron wavefunction is calculated over an energy-dependent spatial mesh, allowing for a complete representation of all scattering paths. The electronic potentials and corresponding wavefunctions are subject to constraints based on physicality and self-consistency, allowing for accurate absorption cross sections in the near-edge region, while higher-energy results are enabled by the implementation of effective Debye–Waller damping and new implementations of second-order lifetime broadening. These include inelastic photoelectron scattering and, for the first time, plasmon excitation coupling. This is the first full-potential package available that can calculate accurate XAFS spectra across a complete energy range within a single framework and without fitted parameters. Example spectra are provided for elemental Sn, rutile TiO2and the FeO6octahedron.


Author(s):  
С.А. Кукушкин ◽  
А.В. Осипов

Spectral ellipsometry in the photon energy range 0.5–9.3 eV was used to study epitaxial films of single-crystal silicon carbide of a cubic polytype 3C-SiC of 20–120 nm grown from silicon Si by atom substitution method. It was found that at the 3C-SiC (111) / Si (111) interface a thin intermediate layer is formed with a dielectric function corresponding to semimetal. This result is confirmed by quantum chemical modeling of the properties of the 3C-SiC (111) / Si (111) interface. It was shown that the conductivity of the layer is associated with p-electrons of Si atoms of SiC at the interface of the phases which are as far as possible from the Si atoms of the substrate.


2016 ◽  
Vol 6 (3) ◽  
Author(s):  
D. Simin ◽  
V. A. Soltamov ◽  
A. V. Poshakinskiy ◽  
A. N. Anisimov ◽  
R. A. Babunts ◽  
...  

2021 ◽  
Vol 119 (26) ◽  
pp. 262101
Author(s):  
N. Assmann ◽  
C. Persson ◽  
A. Yu. Kuznetsov ◽  
E. V. Monakhov

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