scholarly journals A simulation study of the influence of a high-k insulator and source stack on the performance of a double-gate tunnel FET

2020 ◽  
Vol 19 (3) ◽  
pp. 1077-1084
Author(s):  
Mohammad Karbalaei ◽  
Daryoosh Dideban ◽  
Hadi Heidari
Keyword(s):  
Simulation Study ◽  
Double Gate ◽  
Tunnel Fet ◽  
High K

scholarly journals Correction: High-k double gate junctionless tunnel FET with a tunable bandgap

RSC Advances ◽  
2015 ◽  
Vol 5 (73) ◽  
pp. 59665-59665 ◽  
Author(s):  
Shiromani Balmukund Rahi ◽  
Bahniman Ghosh
Keyword(s):  
Double Gate ◽  
Tunable Bandgap ◽  
Tunnel Fet ◽  
High K

Correction for ‘High-k double gate junctionless tunnel FET with a tunable bandgap’ by Shiromani Balmukund Rahi et al., RSC Adv., 2015, 5, 54544–54550.

Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric

2007 ◽  
Vol 51 (11-12) ◽  
pp. 1500-1507 ◽  
Author(s):  
Kathy Boucart ◽  
Adrian Mihai Ionescu
Keyword(s):  
Gate Dielectric ◽  
Double Gate ◽  
Tunnel Fet ◽  
High K ◽  
Length Scaling ◽  
High K Gate Dielectric

High-k double gate junctionless tunnel FET with a tunable bandgap

RSC Advances ◽  
2015 ◽  
Vol 5 (67) ◽  
pp. 54544-54550 ◽  
Author(s):  
Shiromani Balmukund Rahi ◽  
Bahniman Ghosh
Keyword(s):  
Simulation Technique ◽  
Double Gate ◽  
Tunable Bandgap ◽  
2D Simulation ◽  
Tunnel Fet ◽  
High K ◽  
Tunable Source

In the present work, the performance of a heterostructure double gate junctionless tunnel FET (HJL-DGTFET) having a tunable source bandgap has been analyzed using a 2D simulation technique.

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