A simulation Study of Double Channel Trench gate Tunnel FET for Analog Applications

2020 International Conference on Advances in Computing, Communication & Materials (ICACCM) ◽

10.1109/icaccm50413.2020.9212964 ◽

2020 ◽

Author(s):

Tripuresh Joshi ◽

Yashvir Singh ◽

Balraj Singh

Keyword(s):

Simulation Study ◽

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Simulation study of hetero dielectric tri material gate tunnel FET based common source amplifier circuit

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2018.12.004 ◽

2019 ◽

Vol 99 ◽

pp. 258-263 ◽

Author(s):

Umesh Dutta ◽

M.K Soni ◽

Manisha Pattanaik

Keyword(s):

Simulation Study ◽

Common Source ◽

Amplifier Circuit ◽

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Numerical Simulation Study on Air - side of Diesel Locomotive Finned Tube Double Channel Radiator

Journal of Physics Conference Series ◽

10.1088/1742-6596/1746/1/012048 ◽

2021 ◽

Vol 1746 ◽

pp. 012048

Author(s):

Ying Guan ◽

Hongjiang Cui ◽

Minghai Li

Keyword(s):

Numerical Simulation ◽

Simulation Study ◽

Finned Tube ◽

Diesel Locomotive ◽

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A simulation study of the influence of a high-k insulator and source stack on the performance of a double-gate tunnel FET

Journal of Computational Electronics ◽

10.1007/s10825-020-01497-3 ◽

2020 ◽

Vol 19 (3) ◽

pp. 1077-1084

Author(s):

Mohammad Karbalaei ◽

Daryoosh Dideban ◽

Hadi Heidari

Keyword(s):

Simulation Study ◽

Double Gate ◽

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Proposal of an Intrinsic-Source Broken-Gap Tunnel FET to Reduce Band-Tail Effects on Subthreshold Swing: A Simulation Study

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2553086 ◽

2016 ◽

Vol 63 (6) ◽

pp. 2597-2602 ◽

Author(s):

Ankit Sharma ◽

Ahmed Kamal Reza ◽

Kaushik Roy

Keyword(s):

Simulation Study ◽

Subthreshold Swing ◽

Band Tail ◽

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Impact of Temperature Variations on the Device and Circuit Performance of Tunnel FET: A Simulation Study

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2013.2276401 ◽

2013 ◽

Vol 12 (6) ◽

pp. 951-957 ◽

Author(s):

Rakhi Narang ◽

Manoj Saxena ◽

R. S. Gupta ◽

Mridula Gupta

Keyword(s):

Simulation Study ◽

Temperature Variations ◽

Circuit Performance ◽

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Performance analysis and simulation study of a Sandwiched Barrier Tunnel FET

2012 International Conference on Communications, Devices and Intelligent Systems (CODIS) ◽

10.1109/codis.2012.6422232 ◽

2012 ◽

Author(s):

Partha Sarathi Gupta ◽

Madhuchhanda Brahma ◽

Jayita Das ◽

Debasree Burman ◽

Hafizur Rahaman ◽

...

Keyword(s):

Performance Analysis ◽

Simulation Study ◽

Performance Analysis And Simulation

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Simulation study about negative capacitance effects on recessed channel tunnel FET

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abf2d2 ◽

2021 ◽

Vol 60 (SC) ◽

pp. SCCE07

Author(s):

Shinhee Kim ◽

Seungwon Go ◽

Sangwan Kim

Keyword(s):

Simulation Study ◽

Negative Capacitance ◽

Recessed Channel ◽

Capacitance Effects

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Line Tunnel FET Parameter Variations: A Simulation Study

Journal of Computational and Theoretical Nanoscience ◽

10.1166/jctn.2015.4023 ◽

2015 ◽

Vol 12 (9) ◽

pp. 2299-2302

Author(s):

Kamal K. Jha ◽

Varun Sharma ◽

Manisha Pattanaik

Keyword(s):

Simulation Study ◽

Parameter Variations

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A detail simulation study on Extended Source Ultra-Thin Body Double-Gated Tunnel FET

2012 5th International Conference on Computers and Devices for Communication (CODEC) ◽

10.1109/codec.2012.6509242 ◽

2012 ◽

Author(s):

Sayan Kanungo ◽

Hafizur Rahaman ◽

Partha Sarathi Gupta ◽

Partha Sarathi Dasgupta

Keyword(s):

Simulation Study ◽

Thin Body ◽

Extended Source ◽

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396 Validation of ECG indices of ventricular repolarization heterogeneity: a computer simulation study

EP Europace ◽

10.1016/s1099-5129(05)80252-1 ◽

2005 ◽

Vol 7 ◽

pp. 85-85

Keyword(s):

Computer Simulation ◽

Simulation Study ◽

Ventricular Repolarization ◽

Computer Simulation Study

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