Impact of post deposition annealing in N2 ambient on structural properties of nanocrystalline hafnium oxide thin film

2016 ◽  
Vol 28 (1) ◽  
pp. 760-767 ◽  
Author(s):  
Shilpi Pandey ◽  
Prateek Kothari ◽  
Seema Verma ◽  
K. J. Rangra
Keyword(s):  
Thin Film ◽  
Structural Properties ◽  
Hafnium Oxide ◽  
Oxide Thin Film ◽  
Post Deposition Annealing ◽  
Post Deposition

Effect of deposition pressure and post deposition annealing on SmCo thin film properties

2008 ◽  
Vol 5 (12) ◽  
pp. 3759-3762 ◽  
Author(s):  
Th. Speliotis ◽  
E. Makarona ◽  
F. Chouliaras ◽  
C. A. Charitidis ◽  
C. Tsamis ◽  
...  
Keyword(s):  
Thin Film ◽  
Deposition Pressure ◽  
Post Deposition Annealing ◽  
Film Properties ◽  
Post Deposition

Improvement in Contact Resistivity to thin film Bi2Te3

2010 ◽  
Vol 1267 ◽  
Author(s):  
Rahul P Gupta ◽  
Ka Xiong ◽  
John B White ◽  
Kyeongjae Cho ◽  
Bruce Gnade
Keyword(s):  
Thin Film ◽  
Contact Resistance ◽  
Surface Preparation ◽  
Contact Resistivity ◽  
Post Deposition Annealing ◽  
Contact Metallization ◽  
Potential Contact ◽  
Te Material ◽  
The Impact ◽  
Post Deposition

AbstractA study of the impact of surface preparation and post-deposition annealing on contact resistivity for sputtered Ni and Co contacts to thin film Bi2Te3 is presented. The contact resistance values obtained using the transfer length method (TLM) for Ni is compared to Co as a potential contact metal to Bi2Te3. Post-deposition annealing at 100°C on samples that were sputter cleaned reduces the contact resistivity to < 10-7 Ω-cm2 for both Ni and Co contacts to Bi2Te3. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric (TE) material, making it a suitable candidate for contact metallization to Bi2Te3 based devices.

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