Study of structural and electrical properties of ZnO thin film for Thin Film Transistor (TFT) applications

2017 ◽  
Vol 28 (21) ◽  
pp. 16013-16020 ◽  
Author(s):  
Kavindra Kandpal ◽  
Navneet Gupta
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Structural And Electrical Properties

ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Method

2009 ◽  
Vol 1201 ◽  
Author(s):  
Yumi Kawamura ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Kazutoshi Murata ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Large Shift ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

AbstractIn this study, we deposited zinc oxide (ZnO) thin film by atomic layer deposition (ALD) as an active channel layer in thin film transistor (TFT) using two different oxidizers, water (H2O-ALD) and oxygen radical (PA-ALD). The fabricated TFTs were annealed at various temperatures, in an oxygen ambient gas. The electrical properties of TFTs with PA-ALD ZnO film annealed at the temperature up to 400[oC] improved without any degradation of the subthreshold swing or any large shift of the threshold voltage. Through this study, we found that the high performance ZnO TFTs is possibly obtained using PA-ALD at low temperature, and the electrical properties are dependent on the annealing temperature.

The effect of thickness on the optical, structural and electrical properties of ZnO thin film deposited on n-type Si

2018 ◽  
Vol 1165 ◽  
pp. 376-380 ◽  
Author(s):  
H.I. Efkere ◽  
A. Tataroglu ◽  
S.S. Cetin ◽  
N. Topaloglu ◽  
M. Polat Gonullu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Zno Thin Film ◽  
Structural And Electrical Properties
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