scholarly journals Effects of annealing temperature of NbLaO gate dielectric on electrical properties of ZnO thin-film transistor

2017 ◽  
Vol 1 (3) ◽  
pp. 035003 ◽  
Author(s):  
Y R Liu ◽  
H Huang ◽  
P T Lai ◽  
W J Wu ◽  
R S Chen
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Zno Thin Film

Lowering contact resistance by SWCNT–Al bilayer electrodes in solution processable metal-oxide thin film transistor

2015 ◽  
Vol 3 (6) ◽  
pp. 1403-1407 ◽  
Author(s):  
Su Jeong Lee ◽  
Tae Il Lee ◽  
Jee Ho Park ◽  
Il-Kwon Oh ◽  
Hyungjun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Contact Resistance ◽  
Glass Substrate ◽  
Gate Dielectric ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Coated Glass Substrate ◽  
Bilayer Electrode ◽  
Metal Oxide Thin Film

The electrical properties of the SWCNT and SWCNT–Al bilayer electrode TFTs on ITO coated glass substrate with HfO2 gate dielectric and In2O3 channel layer. The inset shows an optical image of the SWCNT–Al bilayer electrode TFT.

ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Method

2009 ◽  
Vol 1201 ◽  
Author(s):  
Yumi Kawamura ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Kazutoshi Murata ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Large Shift ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

AbstractIn this study, we deposited zinc oxide (ZnO) thin film by atomic layer deposition (ALD) as an active channel layer in thin film transistor (TFT) using two different oxidizers, water (H2O-ALD) and oxygen radical (PA-ALD). The fabricated TFTs were annealed at various temperatures, in an oxygen ambient gas. The electrical properties of TFTs with PA-ALD ZnO film annealed at the temperature up to 400[oC] improved without any degradation of the subthreshold swing or any large shift of the threshold voltage. Through this study, we found that the high performance ZnO TFTs is possibly obtained using PA-ALD at low temperature, and the electrical properties are dependent on the annealing temperature.

Sign in / Sign up

Export Citation Format

Share Document