The preparation of water-dispersible graphene oxide/conjugated polymer nanocomposite and the nonvolatile resistive switching memory properties

2017 ◽  
Vol 29 (3) ◽  
pp. 2007-2015
Author(s):  
Lingyun Pang ◽  
Xiuyuan Ni
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Conjugated Polymer ◽  
Polymer Nanocomposite ◽  
Resistive Switching Memory ◽  
Water Dispersible ◽  
Switching Memory

Flexible Resistive Switching Memory Devices Based on Graphene Oxide Polymer Nanocomposite

NANO ◽  
2020 ◽  
Vol 15 (09) ◽  
pp. 2050111
Author(s):  
Enming Zhao ◽  
Shuangqiang Liu ◽  
Xiaodan Liu ◽  
Chen Wang ◽  
Guangyu Liu ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Flexible Substrate ◽  
Random Access ◽  
Polymer Nanocomposite ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Switching Memory ◽  
Memory Characteristic ◽  
Switching Memory

Flexible resistive switching memory devices based on graphene oxide (GO) polymer nanocomposite were prepared on flexible substrate to research the influence of bending on resistive switching behavior. The devices showed evident response in resistive switching memory characteristics to flexible bending. The 2000 cycles flexible bending leads to the switch of resistive switching memory characteristic from write-once-read-many time memory (WORM) to static random access memory (SRAM). Both WORM and SRAM memory properties are all repeatable, and the threshold switching voltage also showed good consistency. The resistive switching mechanism is attributed to the formation of carbon-rich conductive filaments for nonvolatile WORM characteristics. The bending-induced micro-crack may be responsible for the partial broken of the electrical channels, and may lead to the volatile SRAM characteristics.

Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

Nanoscale ◽  
2017 ◽  
Vol 9 (40) ◽  
pp. 15314-15322 ◽  
Author(s):  
Se-I Oh ◽  
Janardhanan R. Rani ◽  
Sung-Min Hong ◽  
Jae-Hyung Jang
Keyword(s):  
Graphene Oxide ◽  
Iron Oxide ◽  
Resistive Switching ◽  
Bipolar Resistive Switching ◽  
Solution Processed ◽  
Resistive Switching Memory ◽  
Switching Memory

A solution-processed FeOx–GO hybrid based RRAM device with excellent self-rectifying characteristics (ILRS/IR > 104) is presented.

Flexible Resistive Switching Memory Device Based on Graphene Oxide

2010 ◽  
Vol 31 (9) ◽  
pp. 1005-1007 ◽  
Author(s):  
Seul Ki Hong ◽  
Ji Eun Kim ◽  
Sang Ouk Kim ◽  
Sung-Yool Choi ◽  
Byung Jin Cho
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Memory Device ◽  
Resistive Switching Memory ◽  
Switching Memory

Enabling superior stretchable resistive switching memory via polymer-functionalized graphene oxide nanosheets

2019 ◽  
Vol 7 (46) ◽  
pp. 14664-14671 ◽  
Author(s):  
Jie Hou ◽  
Bin Zhang ◽  
Dongqi Li ◽  
Yubin Fu ◽  
Gang Liu ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Electroactive Polymers ◽  
Functionalized Graphene ◽  
Graphene Oxide Nanosheets ◽  
Functionalized Graphene Oxide ◽  
Resistive Switching Memory ◽  
Electrical Bistability ◽  
Switching Memory

Overlapping and intercalated graphene oxide nanosheets, covalently modified with electroactive polymers, are employed to enable stretchable resistive switching memory with superior electrical bistability and deformation capability.

Retention behaviour of graphene oxide resistive switching memory

2014 ◽  
Vol 11 (1/2/3/4) ◽  
pp. 106 ◽  
Author(s):  
Fang Yuan ◽  
Yu Ren Ye ◽  
Chao Sung Lai ◽  
Jer Chyi Wang ◽  
Zhigang Zhang ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Resistive Switching ◽  
Resistive Switching Memory ◽  
Retention Behaviour ◽  
Switching Memory
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