The coexisting negative and positive electrocaloric effect in (Pb0.97La0.02)(Zr, Sn, Ti)O3 antiferroelectric thick films optimized via phase transition procedure

2018 ◽  
Vol 29 (17) ◽  
pp. 14528-14534 ◽  
Author(s):  
Yong Li ◽  
Hongcheng Gao ◽  
Yunying Liu ◽  
Liwen Zhang ◽  
Xihong Hao
Keyword(s):  
Phase Transition ◽  
Thick Films ◽  
Electrocaloric Effect ◽  
Antiferroelectric Thick Films ◽  
Transition Procedure

Structures and Dielectric Properties of (Pb, La)(Zr, Ti)O3 Antiferroelectric Thick Films Prepared by Different Sintering Procedures

2012 ◽  
Vol 503 ◽  
pp. 375-380 ◽  
Author(s):  
Wen Ping Geng ◽  
Xiu Jian Chou ◽  
Yong Bo Lv ◽  
Ji Jun Xiong ◽  
Wen Dong Zhang
Keyword(s):  
Phase Transition ◽  
Electric Field ◽  
Crystal Orientation ◽  
Thick Films ◽  
Sol Gel ◽  
Temperature Dependent ◽  
Dielectric Constant And Loss ◽  
Sol Gel Process ◽  
Paraelectric State ◽  
Antiferroelectric Thick Films

(Pb,La)(Zr,Ti)O3antiferroelectric thick films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The effects of single annealing and multistep annealing on the structures and electric properties of the films were investigated. The crystal orientation and structure of the antiferroelectric thick films were studied. The thick films by multistep annealing have higher (100)-preferred orientation than them by single annealing. The surface of the films was more smooth, compact and uniform by single annealing. The antiferroelectric nature of the (Pb,La)(Zr,Ti)O3antiferroelectric thick films by various sintering procedures was demonstrated by P(polarization)-E(electric field) and C(capactitance)-E(electric field). The temperature dependent of the dielectric constant and loss was measured under the frequency 1, 10, and 100 kHz and comparing with traditional signal annealing, the films have phase transition from antiferroelectric state to paraelectric state by multistep annealing.

Pulse polarization inversion and phase transition in ferroelectric and antiferroelectric thick films

2001 ◽  
Vol 21 (10-11) ◽  
pp. 1619-1623 ◽  
Author(s):  
Hartmut W Gundel ◽  
Périg Limousin ◽  
Raynald Seveno ◽  
Dominique Averty
Keyword(s):  
Phase Transition ◽  
Thick Films ◽  
Pulse Polarization ◽  
Antiferroelectric Thick Films

Phase Transition Characterization Dependent on Temperature and DC Electric Field for (Pb, La) (Zr, Ti)O3 Antiferroelectric Thick Films

2012 ◽  
Vol 503 ◽  
pp. 97-102 ◽  
Author(s):  
Xiu Jian Chou ◽  
Miao Xuan Du ◽  
Yong Bo Lv ◽  
Jun Liu ◽  
Wen Dong Zhang
Keyword(s):  
Phase Transition ◽  
Dielectric Constant ◽  
Electric Field ◽  
Applied Field ◽  
Thick Films ◽  
Sol Gel ◽  
Silicon Substrates ◽  
Dielectric Constant And Loss ◽  
Dc Electric Field ◽  
Antiferroelectric Thick Films

Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films were prepared on platinized silicon substrates by sol–gel methods. Films showed polycrystalline perovskite structure with a strong (100) preferred orientation. The antiferroelectric nature of the films was confirmed by the double hysteresis behaviors versus applied field. The temperature dependence of dielectric constant and loss displayed the Curie temperature was 225oC.The current caused by the polarization and depolarization of polar was detected at coupling application of electric field and temperature. The phase transition characterization could be effectively adjusted by electric field and temperature.

scholarly journals Frequency Invariability of (Pb,La)(Zr,Ti)O3 Antiferroelectric Thick-Film Micro-Cantilevers

Sensors ◽  
2018 ◽  
Vol 18 (5) ◽  
pp. 1542
Author(s):  
Kun An ◽  
Xuechen Jin ◽  
Jiang Meng ◽  
Xiao Li ◽  
Yifeng Ren
Keyword(s):  
Phase Transition ◽  
Frequency Shift ◽  
Thick Film ◽  
Natural Frequency ◽  
Amplitude Modulation ◽  
Frequency Tuning ◽  
Thick Films ◽  
Driving Voltage ◽  
Bulk Piezoelectric Ceramics ◽  
Antiferroelectric Thick Films

Micro-electromechanical systems comprising antiferroelectric layers can offer both actuation and transduction to integrated technologies. Micro-cantilevers based on the (Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric thick film are fabricated by the micro-nano manufacturing process, to utilize the effect of phase transition induced strain and sharp phase switch of antiferroelectric materials. When micro-cantilevers made of antiferroelectric thick films were driven by sweep voltages, there were two resonant peaks corresponding to the natural frequency shift from 27.8 to 27.0 kHz, before and after phase transition. This is the compensation principle for the PLZT micro-cantilever to tune the natural frequency by the amplitude modulation of driving voltage, rather than of frequency modulation. Considering the natural frequency shift about 0.8 kHz and the frequency tuning ability about 156 Hz/V before the phase transition, this can compensate the frequency shift caused by increasing temperature by tuning only the amplitude of driving voltage, when the ultrasonic micro-transducer made of antiferroelectric thick films works for such a long period. Therefore, antiferroelectric thick films with hetero-structures incorporated into PLZT micro-cantilevers not only require a lower driving voltage (no more than 40 V) than rival bulk piezoelectric ceramics, but also exhibit better performance of frequency invariability, based on the amplitude modulation.

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