scholarly journals Frequency Invariability of (Pb,La)(Zr,Ti)O3 Antiferroelectric Thick-Film Micro-Cantilevers

Sensors ◽  
2018 ◽  
Vol 18 (5) ◽  
pp. 1542
Author(s):  
Kun An ◽  
Xuechen Jin ◽  
Jiang Meng ◽  
Xiao Li ◽  
Yifeng Ren
Keyword(s):  
Phase Transition ◽  
Frequency Shift ◽  
Thick Film ◽  
Natural Frequency ◽  
Amplitude Modulation ◽  
Frequency Tuning ◽  
Thick Films ◽  
Driving Voltage ◽  
Bulk Piezoelectric Ceramics ◽  
Antiferroelectric Thick Films

Micro-electromechanical systems comprising antiferroelectric layers can offer both actuation and transduction to integrated technologies. Micro-cantilevers based on the (Pb0.97La0.02)(Zr0.95Ti0.05)O3 (PLZT) antiferroelectric thick film are fabricated by the micro-nano manufacturing process, to utilize the effect of phase transition induced strain and sharp phase switch of antiferroelectric materials. When micro-cantilevers made of antiferroelectric thick films were driven by sweep voltages, there were two resonant peaks corresponding to the natural frequency shift from 27.8 to 27.0 kHz, before and after phase transition. This is the compensation principle for the PLZT micro-cantilever to tune the natural frequency by the amplitude modulation of driving voltage, rather than of frequency modulation. Considering the natural frequency shift about 0.8 kHz and the frequency tuning ability about 156 Hz/V before the phase transition, this can compensate the frequency shift caused by increasing temperature by tuning only the amplitude of driving voltage, when the ultrasonic micro-transducer made of antiferroelectric thick films works for such a long period. Therefore, antiferroelectric thick films with hetero-structures incorporated into PLZT micro-cantilevers not only require a lower driving voltage (no more than 40 V) than rival bulk piezoelectric ceramics, but also exhibit better performance of frequency invariability, based on the amplitude modulation.

Structures and Dielectric Properties of (Pb, La)(Zr, Ti)O3 Antiferroelectric Thick Films Prepared by Different Sintering Procedures

2012 ◽  
Vol 503 ◽  
pp. 375-380 ◽  
Author(s):  
Wen Ping Geng ◽  
Xiu Jian Chou ◽  
Yong Bo Lv ◽  
Ji Jun Xiong ◽  
Wen Dong Zhang
Keyword(s):  
Phase Transition ◽  
Electric Field ◽  
Crystal Orientation ◽  
Thick Films ◽  
Sol Gel ◽  
Temperature Dependent ◽  
Dielectric Constant And Loss ◽  
Sol Gel Process ◽  
Paraelectric State ◽  
Antiferroelectric Thick Films

(Pb,La)(Zr,Ti)O3antiferroelectric thick films were prepared on Pt (111)/ Ti/SiO2/Si (100) substrates by a sol-gel process. The effects of single annealing and multistep annealing on the structures and electric properties of the films were investigated. The crystal orientation and structure of the antiferroelectric thick films were studied. The thick films by multistep annealing have higher (100)-preferred orientation than them by single annealing. The surface of the films was more smooth, compact and uniform by single annealing. The antiferroelectric nature of the (Pb,La)(Zr,Ti)O3antiferroelectric thick films by various sintering procedures was demonstrated by P(polarization)-E(electric field) and C(capactitance)-E(electric field). The temperature dependent of the dielectric constant and loss was measured under the frequency 1, 10, and 100 kHz and comparing with traditional signal annealing, the films have phase transition from antiferroelectric state to paraelectric state by multistep annealing.

Microcantilevers Fabrication Process of Silicon-Based (Pb, La)(Zr, Ti)O3 Antiferroelectric Thick Films for Microactuator Applications

2011 ◽  
Vol 80-81 ◽  
pp. 13-17 ◽  
Author(s):  
Yu Hua Yang ◽  
Zhen Yu Zhao ◽  
Xin Feng Guan ◽  
Xiu Jian Chou
Keyword(s):  
Thick Film ◽  
Thick Films ◽  
Sol Gel ◽  
Xrd Analysis ◽  
X Ray Diffraction ◽  
Sol Gel Process ◽  
Mems Technology ◽  
Antiferroelectric Thick Films ◽  
Silicon Based ◽  
Design And Manufacture

(Pb, La) (Zr, Ti)O3 (PLZT) antiferroelectric thick films were deposited on Pt (111)/ Ti/SiO2/Si (100) substrates via sol-gel process. X-ray diffraction (XRD) analysis indicated that the films derived on Pt (111)/ Ti/SiO2/Si (100) substrates showed strong (111) preferred orientation. The Bulk and Surface silicon of micromachining process were employed in the silicon-based antiferroelectric thick film microcantilever fabrication, such as wet chemical etching for PLZT, inductive couple plasmas (ICP)for silicon etching, platinum etching and so on. Challenges such as Pt/Ti bottom electrode and morphology of PLZT thick film were solved, the integration of functional antiferroelectric materials and MEMS technology, provide a new way of thinking for the design and manufacture of micro-actuators.

Pulse polarization inversion and phase transition in ferroelectric and antiferroelectric thick films

2001 ◽  
Vol 21 (10-11) ◽  
pp. 1619-1623 ◽  
Author(s):  
Hartmut W Gundel ◽  
Périg Limousin ◽  
Raynald Seveno ◽  
Dominique Averty
Keyword(s):  
Phase Transition ◽  
Thick Films ◽  
Pulse Polarization ◽  
Antiferroelectric Thick Films

Phase Transition Characterization Dependent on Temperature and DC Electric Field for (Pb, La) (Zr, Ti)O3 Antiferroelectric Thick Films

2012 ◽  
Vol 503 ◽  
pp. 97-102 ◽  
Author(s):  
Xiu Jian Chou ◽  
Miao Xuan Du ◽  
Yong Bo Lv ◽  
Jun Liu ◽  
Wen Dong Zhang
Keyword(s):  
Phase Transition ◽  
Dielectric Constant ◽  
Electric Field ◽  
Applied Field ◽  
Thick Films ◽  
Sol Gel ◽  
Silicon Substrates ◽  
Dielectric Constant And Loss ◽  
Dc Electric Field ◽  
Antiferroelectric Thick Films

Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films were prepared on platinized silicon substrates by sol–gel methods. Films showed polycrystalline perovskite structure with a strong (100) preferred orientation. The antiferroelectric nature of the films was confirmed by the double hysteresis behaviors versus applied field. The temperature dependence of dielectric constant and loss displayed the Curie temperature was 225oC.The current caused by the polarization and depolarization of polar was detected at coupling application of electric field and temperature. The phase transition characterization could be effectively adjusted by electric field and temperature.

scholarly journals Piezoelectric Thick Film Deposition via Powder/Granule Spray in Vacuum: A Review

Actuators ◽  
2020 ◽  
Vol 9 (3) ◽  
pp. 59
Author(s):  
Deepak Rajaram Patil ◽  
Venkateswarlu Annapureddy ◽  
J. Kaarthik ◽  
Atul Thakre ◽  
Jun Akedo ◽  
...  
Keyword(s):  
Thick Film ◽  
Thick Films ◽  
Cost Effective ◽  
Aerosol Deposition ◽  
Ceramic Coatings ◽  
Film Deposition ◽  
Energy Harvesters ◽  
Ceramic Films ◽  
Dense Ceramic ◽  
Processing Techniques

Conventional thin-film processing techniques remain inadequate for obtaining superior dense ceramic thick films. The incompatibility of ceramic films prepared via other methods, such as screen printing, spin coating, and sputtering, is a major obstacle in the fabrication of thick film-based ceramic electronic components. The granule spray in vacuum (GSV) processes and aerosol deposition (AD) are important coating approaches for forming dense ceramic thick films featuring nanoscale crystallite structures at room temperature, which offer excellent material properties and facilitate cost-effective production. AD ceramic coatings require the acceleration of solid-state submicron ceramic particles via gas streams with a velocity of a few hundred meters per second, which are then wedged onto a substrate. This process is economical and particularly useful for the fabrication of piezoelectric thick film-based microactuators, energy harvesters, sensors, and optoelectronic devices. More recently, the GSV technique was improved to achieve more uniform and homogeneous film deposition after AD. This review article presents a detailed overview of the AD and GSV processes for piezoelectric thick films in terms of recent scientific and technological applications.

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