Improved ferroelectric properties of (100)-oriented PZT thin films deposited on stainless steel substrates with La0.5Sr0.5CoO3 buffer layers

ABSTRACTPbZr0.53Ti0.47O3 (PZT) ferroelectric thin films were deposited on LaNiO3 (LNO) buffered stainless steel (SS) substrates by sol-gel method. The effect of LNO buffer layer on the orientation and electric properties of PZT thin films for different thicknesses were studied. X-ray diffraction (XRD) results indicated that PZT thin films on SS substrates exhibit the (100) preferred orientation with the LNO buffer layers. Scanning electron microscope (SEM) images show that PZT thin films were well crystallized with grain size of about 100 nm. PZT thin films deposited on SS maintain the excellent ferroelectric properties with remnant polarization of about 20 μC/cm2.

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Thickness Effect of BaPbO3 Buffer Layers on the Ferroelectric Properties of PZT Thin Films

ECS Meeting Abstracts ◽

10.1149/ma2005-01/8/393 ◽

2005 ◽

Keyword(s):

Thin Films ◽

Ferroelectric Properties ◽

Buffer Layers ◽

Thickness Effect ◽

Pzt Thin Films

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Effects of LNO buffer layers on electrical properties of BFO-PT thin films on stainless steel substrates

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2019.01.033 ◽

2019 ◽

Vol 784 ◽

pp. 231-236 ◽

Cited By ~ 1

Author(s):

Susu Wang ◽

Hao Wang ◽

Jie Jian ◽

Jianguo Chen ◽

Jinrong Cheng

Keyword(s):

Thin Films ◽

Stainless Steel ◽

Electrical Properties ◽

Buffer Layers ◽

Steel Substrates

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Sputtered Pb(Zr, Ti)O3 Thin Films for Ferroelectric Capacitors

MRS Proceedings ◽

10.1557/proc-596-277 ◽

1999 ◽

Vol 596 ◽

Author(s):

T. Sakoda ◽

K. Aoki ◽

Y. Fukuda

Keyword(s):

Thin Films ◽

Ferroelectric Properties ◽

Buffer Layers ◽

Grain Structure ◽

Rich Phase ◽

Pzt Thin Films ◽

Ferroelectric Capacitors ◽

Polarization Retention ◽

Good Retention ◽

Lower Voltage

AbstractSputtered Pb(Zr, Ti)O3 thin films with superior ferroelectric properties were successfully obtained by controlling the grain structure and the film compositions. We found that amorphous PbTiO3 buffer layers are effective in forming PZT thin films with fine dense grains. The sputtered PZT thin films with Ti-rich phase showed excellent ferroelectric properties. The polarization retention properties of PZT capacitors with Ti-rich phase are remarkable, and the value of the retained polarization density after 10 years is expected to be larger than 40 μC/cm2. Further, 150-nm-thick PZT capacitors with Zr/Ti=30/70 showed 2P, at 1.5 V of more than 30 μC/cm2, and good retention property. These results indicate the potential of the lower voltage operation of sputtered PZT capacitors by optimizing the film composition and thickness.

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Effect of PLT Buffer Layers on the PZT Thin Films for Scaling-Down Ferroelectric Materials

MRS Proceedings ◽

10.1557/proc-0902-t10-52 ◽

2005 ◽

Vol 902 ◽

Author(s):

Li Dong Hua ◽

Eun Sun Lee ◽

Hyun Woo Chung ◽

Byung Du Ahn ◽

Sang Yeol Lee

Keyword(s):

Thin Films ◽

Applied Voltage ◽

Remanent Polarization ◽

Ferroelectric Properties ◽

Ferroelectric Materials ◽

Buffer Layers ◽

Pzt Thin Films ◽

Si Substrates ◽

Scaling Down ◽

Hysteresis Characteristics

AbstractThe Hysteresis characteristics of below 400 nm- thick Pb(Zr0.52Ti0.48)O3 (PZT) thin films grown on Pt (111) /Ti/SiO2/Si substrates have showed very poor with remanent polarization of 1∼3 μC/cm2 in our previous research. To study the further scaling-down, we introduced the method of our previous research that the (Pb0.72La0.28)Ti0.94O3 (PLT) buffer layers play an important role in enhancing the ferroelectric properties of the PZT thin films. As a result, the remanent polarization of 300 nm-thick PZT thin films with the 10 nm-thick PLT buffer layers have showed 32 μC/cm2 at applied voltage of 8 V and 24 μC/cm2 at applied voltage of 5 V. Inserted the PLT seed layers between the PZT thin films and substrate, the hysteresis characteristics of PZT thin films were improved a lot. The dielectric and leakage current properties of PZT thin films were also investigated.

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Preparation of PZT Thin Films on Stainless Steel Using Electrochemical Reduction

Journal of Solid State Chemistry ◽

10.1006/jssc.1997.7709 ◽

1998 ◽

Vol 136 (2) ◽

pp. 293-297 ◽

Cited By ~ 5

Author(s):

Michio Koinuma ◽

Hideki Ohmura ◽

Yoshiro Fujioka ◽

Yasumichi Matsumoto ◽

Satoshi Yamada

Keyword(s):

Thin Films ◽

Stainless Steel ◽

Electrochemical Reduction ◽

Pzt Thin Films

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The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

MRS Proceedings ◽

10.1557/proc-493-131 ◽

1997 ◽

Vol 493 ◽

Cited By ~ 8

Author(s):

Seung-Hyun Kim ◽

J. G. Hong ◽

J. C. Gunter ◽

H. Y. Lee ◽

S. K. Streiffer ◽

...

Keyword(s):

Thin Films ◽

Leakage Current ◽

Bottom Electrode ◽

Ferroelectric Properties ◽

Sol Gel ◽

Chemical Solution ◽

Electrode Structure ◽

Solution Deposition ◽

Pzt Thin Films ◽

Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

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Post-Processing of Pulsed Laser-Deposited Pzt Thin Films

MRS Proceedings ◽

10.1557/proc-243-519 ◽

1991 ◽

Vol 243 ◽

Author(s):

C. K. Chiang ◽

W. Wong-Ng ◽

L. P. Cook ◽

P. K. Schenck ◽

H. M. Lee ◽

...

Keyword(s):

Thin Films ◽

Amorphous Material ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Linear Shrinkage ◽

Laser Deposition ◽

Amorphous Films ◽

Pzt Thin Films ◽

Si Substrates ◽

Pzt Thin Film

AbstractPZT thin films were prepared by pulsed laser deposition on unheated Ptcoated Si substrates. As deposited, the films were amorphous. Films crystallized at 550 - 600 °C to produce predominantly crystalline ferroelectric PZT. Crystallization of the amorphous material was accompanied by a linear shrinkage of ∼2 %, as manifested in development of cracks in the film. Spacing, width and morphology of larger cracks followed a regular progression with decreasing film thickness. For film thicknesses less than 500 runm, much of the shrinkage was taken up by small, closely-spaced cracks of local extent. Implications for measurement of PZT thin film ferroelectric properties and processing are discussed.

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