Effects of LNO buffer layers on electrical properties of BFO-PT thin films on stainless steel substrates

Silica-copper oxide (silica-CuO) composite thin films were prepared by a dipping sol-gel route using ethanolic solutions comprised TEOS and a copper-propionate complex. Sols with different TEOS/Cu-propionate (Si/Cu) molar ratios were prepared and applied on stainless steel substrates using dipping process. During the annealing process, copper-propionate complexes developed into particulate polycrystalline CuO dispersed in a partially crystallized silica matrix, as indicated by the X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses. The gel thermal analysis revealed that the prepared material might be stable up to400°C. The silica-CuO/stainless steel system was characterized as a selective absorber surface and its solar selectivity parameters, absorptance (α), and emittance (ε) were evaluated from UV-NIR reflectance data. The solar parameters of such a system were mostly affected by the thickness and phase composition of theSiO2-CuO film. Interestingly, the best solar parameters (α= 0.92 andε= 0.2) were associated to the thinnest films, which comprised a CuO-Cu2Omixture immersed in the silica matrix, as indicated by XPS.

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Flexible stainless steel foil as a substrate for superconducting Y-Ba-Cu-O films

Journal of Materials Research ◽

10.1557/jmr.1990.0717 ◽

1990 ◽

Vol 5 (4) ◽

pp. 717-720 ◽

Cited By ~ 35

Author(s):

S. Witanachchi ◽

S. Patel ◽

Y. Z. Zhu ◽

H. S. Kwok ◽

D. T. Shaw

Keyword(s):

Stainless Steel ◽

Critical Current ◽

Stainless Steel Substrate ◽

Steel Substrate ◽

Surface Condition ◽

Heat Treating ◽

Critical Currents ◽

Buffer Layers ◽

Critical Temperatures ◽

Steel Substrates

As-deposited superconducting Y-Ba-Cu-O films have been grown on stainless steel substrates by the plasma assisted laser deposition technique. Low interfacial diffusion of iron at the 550°C growth temperature enables us to produce superconducting films with critical temperatures up to 83 K and critical currents up to ∼4 × 103 A/cm2 (40 K). Dependence of the superconducting properties of the Y-Ba-Cu-O films on the surface condition of the mirror finished stainless steel substrate has been studied. Critical temperature and critical current of the films have been improved by heat-treating the substrate and incorporating buffer layers. Variation of the critical current with the bend radii of the film is discussed.

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Electrochemical Performance of Arc Ion Plated TiO2 Thin Films on AISI 304 Stainless Steel Substrates in Bio-Compatible Solutions

ECS Transactions ◽

10.1149/1.3103811 ◽

2019 ◽

Vol 16 (38) ◽

pp. 63-70

Author(s):

Kuo-Feng Chiu ◽

Chia-Lin Tsai ◽

Chi-Jen Chung ◽

Hsi-Kai Tsou

Keyword(s):

Thin Films ◽

Stainless Steel ◽

Electrochemical Performance ◽

304 Stainless Steel ◽

Aisi 304 Stainless Steel ◽

Tio2 Thin Films ◽

Aisi 304 ◽

Steel Substrates

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Enhancement of Electrical Properties of ZnO: Al Thin Films on Transparent TPT Substrates by SiO2 Buffer Layers

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.774-776.954 ◽

2013 ◽

Vol 774-776 ◽

pp. 954-959

Author(s):

Xiao Jing Wang

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Carrier Concentration ◽

Buffer Layer ◽

Rf Magnetron Sputtering ◽

Hexagonal Structure ◽

Buffer Layers ◽

Zno Thin Films ◽

Average Transmittance ◽

Doped Zno

The electrical properties need to be improved, although Aluminum doped ZnO thin films (ZnO: Al) have been successfully deposited on transparent TPT substrates by our group. In this paper, ZnO: Al film was deposited on TPT substrate with SiO2 buffer layer by RF magnetron sputtering. The obtained film had a hexagonal structure and highly (002) preferred orientation. Compared with ZAO film without buffer layer, the lattice constant distortion of the film with buffer layer was decreased and the compressive stress was decreased by 9.2%, reaching to 0.779GPa. The carrier concentration and hall mobility of the film with buffer layer were both increased; especially the carrier concentration was enhanced by two orders of magnitude, reaching to 2.65×10+20/cm3. The resistivity of ZAO film with SiO2 buffer layer was about 7.6×10-3 Ω·cm and the average transmittance was over 70% in the range of 450~900nm.

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Optical Properties of β-RDX Thin Films Deposited on Gold and Stainless Steel Substrates Calculated from Reflection–Absorption Infrared Spectra

Applied Spectroscopy ◽

10.1177/0003702817710248 ◽

2017 ◽

Vol 71 (8) ◽

pp. 1990-2000 ◽

Cited By ~ 2

Author(s):

José L. Ruiz-Caballero ◽

Joaquín A. Aparicio-Bolaño ◽

Amanda M. Figueroa-Navedo ◽

Leonardo C. Pacheco-Londoño ◽

Samuel P. Hernandez-Rivera

Keyword(s):

Thin Films ◽

Stainless Steel ◽

Optical Properties ◽

Infrared Spectra ◽

Steel Substrates

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Load- and Depth-Sensing Indentation Tester for Properties Measurement at Non-Ambient Temperatures

MRS Proceedings ◽

10.1557/proc-308-121 ◽

1993 ◽

Vol 308 ◽

Cited By ~ 2

Author(s):

Karl B. Yoder ◽

Donald S. Stone

Keyword(s):

Thin Films ◽

Stainless Steel ◽

Temperature Dependence ◽

Preliminary Data ◽

Depth Sensing ◽

Nanometer Resolution ◽

Ambient Temperatures ◽

Experimental Apparatus ◽

Steel Substrates

ABSTRACTThe ability to measure the temperature-dependence of the hardness of thin films is useful from both an applications and a scientific standpoint. For this reason, we have designed and constructed a load- and depth-sensing indentation tester combining sub-nanometer resolution with the ability to operate over a range of temperatures, currently 150K to 400K. This paper describes the new experimental apparatus and reports preliminary data on 440C stainless steel substrates with and without a 0.75 μm ZrN coating.

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Structural and electrical properties of Pb(Zr,Ti)O3 thin films on NiCr substrate modified by LaNiO3 and PbTiO3 buffer layers

10.1117/12.607755 ◽

2004 ◽

Cited By ~ 1

Author(s):

Liang He ◽

Jinrong Cheng ◽

Zhongyan Meng

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Buffer Layers ◽

Structural And Electrical Properties

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Influence of Ta2O5, TiO2, and ZrO2 Interfacial Layers on Structural and Electrical Properties of Laser Ablated Ba0.5Sr0.5TiO3 Thin Films

MRS Proceedings ◽

10.1557/proc-748-u6.5 ◽

2002 ◽

Vol 748 ◽

Author(s):

Suprem R. Das ◽

Rasmi R. Das ◽

P. Bhattacharya ◽

Ram S. Katiyar

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Leakage Current ◽

Leakage Current Density ◽

Current Density ◽

Buffer Layers ◽

Bst Thin Films ◽

Interfacial Layers ◽

Average Grain Size ◽

Structural And Electrical Properties

ABSTRACTPulsed laser deposition technique was used to fabricate Ba0.5Sr0.5TiO 3 (BST) thin-films on Pt/TiO 2/SiO2/Si substrates. The influence of thin interfacial layers of Ta2O5, TiO2, and ZrO2, on the structural and electrical properties of BST thin films was investigated. Insertion of interfacial layers does not affect the perovskite phase formation of BST thin films. Buffer layers helped to make uniform distribution of grains and resulted in a relative increase in the average grain size. The dielectric tunability of BST thin films was reduced with the presence of buffer layers. A BST thin film having a dielectric permitivity of 470 reduced to 337, 235 and 233 in the presence of Ta2O5, TiO2, and ZrO2 layers, respectively. The reduction of the relative dielectric permittivity of BST films with the insertion of interfacial layers was explained in terms of a series capacitance effect, due to the low dielectric constant of interfacial layers. The TiO2 layer did not show any appreciable change in the leakage current density. Deposition of thin Ta2O5 and ZrO2 interfacial layer on top of Pt reduced the leakage current density by an order of magnitude.

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