Ag/HfO2-based conductive bridge memories elaborated by atomic layer deposition: impact of inert electrode and HfO2 crystallinity on resistive switching mechanisms

Resistive switching properties of polycrystalline HfOxNyfilms by plasma-enhanced atomic layer deposition

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.050304 ◽

2017 ◽

Vol 56 (5) ◽

pp. 050304 ◽

Cited By ~ 4

Author(s):

Jue Yu ◽

Wei Huang ◽

Chao Lu ◽

Guangyang Lin ◽

Cheng Li ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Resistive Switching ◽

Atomic Layer ◽

Enhanced resistive switching characteristics of HfOx insulator fabricated by atomic layer deposition and La(NO3)3·6H2O solution as catalytic oxidant

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.5134828 ◽

2020 ◽

Vol 38 (3) ◽

pp. 032405

Author(s):

Yong Chan Jung ◽

In-Sung Park ◽

Sejong Seong ◽

Taehoon Lee ◽

Seon Yong Kim ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Resistive Switching ◽

Atomic Layer ◽

Layer Deposition ◽

High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition

Nanoscale Research Letters ◽

10.1186/s11671-015-0738-1 ◽

2015 ◽

Vol 10 (1) ◽

Cited By ~ 15

Author(s):

Zhe Chen ◽

Feifei Zhang ◽

Bing Chen ◽

Yang Zheng ◽

Bin Gao ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Resistive Switching ◽

High Performance ◽

Atomic Layer ◽

Cross Point ◽

Resistive Switching Memory ◽

Layer Deposition ◽

Switching Memory

Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

Applied Physics Letters ◽

10.1063/1.4774400 ◽

2013 ◽

Vol 102 (1) ◽

pp. 012113 ◽

Cited By ~ 48

Author(s):

Jian Zhang ◽

Hui Yang ◽

Qi-long Zhang ◽

Shurong Dong ◽

J. K. Luo

Keyword(s):

Thin Films ◽

Low Temperature ◽

Atomic Layer Deposition ◽

Resistive Switching ◽

Atomic Layer ◽

Zno Thin Films ◽

Bipolar Resistive Switching ◽

Layer Deposition ◽

Resistive Switching Characteristics of HfOx/Al2O3 Nano-multilayers Structure Memristor Fabricated by Atomic Layer Deposition

10.1109/asicon52560.2021.9620227 ◽

2021 ◽

Author(s):

Jian Liu ◽

Ke Wang ◽

Xiaolong Zhou ◽

Xiaopeng Xiao ◽

Yongming Tang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Resistive Switching ◽

Atomic Layer ◽

Layer Deposition ◽

Improvement of Resistive Switching Stability of HfO2 Films with Al Doping by Atomic Layer Deposition

Electrochemical and Solid-State Letters ◽

10.1149/2.011204esl ◽

2012 ◽

Vol 15 (4) ◽

pp. H88 ◽

Cited By ~ 28

Author(s):

Ching-Shiang Peng ◽

Wen-Yuan Chang ◽

Yi-Hsuan Lee ◽

Ming-Ho Lin ◽

Frederick Chen ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Resistive Switching ◽

Atomic Layer ◽

Al Doping ◽

Layer Deposition ◽

Switching Stability

Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition

Applied Physics A ◽

10.1007/s00339-014-8324-4 ◽

2014 ◽

Vol 116 (2) ◽

pp. 663-669 ◽

Cited By ~ 10

Author(s):

Jian Zhang ◽

Hui Yang ◽

Qilong Zhang ◽

Hao Jiang ◽

Jikui Luo ◽

...

Keyword(s):

Thin Film ◽

Atomic Layer Deposition ◽

Resistive Switching ◽

Oxygen Plasma ◽

Atomic Layer ◽

Ex Situ ◽

Zno Thin Film ◽

Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition

Nanoscale Research Letters ◽

10.1186/s11671-017-2164-z ◽

2017 ◽

Vol 12 (1) ◽

Cited By ~ 21

Author(s):

Wei Zhang ◽

Ji-Zhou Kong ◽

Zheng-Yi Cao ◽

Ai-Dong Li ◽

Lai-Guo Wang ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Resistive Switching ◽

Atomic Layer ◽

Bipolar Resistive Switching ◽

Layer Deposition ◽

Trilayer Structure ◽

Reproducible and reliable resistive switching behaviors of AlOX/HfOX bilayer structures with Al electrode by atomic layer deposition

RSC Advances ◽

10.1039/c6ra26872b ◽

2017 ◽

Vol 7 (27) ◽

pp. 16704-16708 ◽

Cited By ~ 23

Author(s):

Masoud Akbari ◽

Min-Kyu Kim ◽

Dongshin Kim ◽

Jang-Sik Lee

Keyword(s):

Atomic Layer Deposition ◽

Resistive Switching ◽

Atomic Layer ◽

The resistive switching behaviors of AlOX/HfOX bilayer structures were investigated.

Highly improved resistive switching performances of the self-doped Pt/HfO2:Cu/Cu devices by atomic layer deposition

Science China Physics Mechanics and Astronomy ◽

10.1007/s11433-016-0389-9 ◽

2016 ◽

Vol 59 (12) ◽

Cited By ~ 7

Author(s):

Sen Liu ◽

Wei Wang ◽

QingJiang Li ◽

XiaoLong Zhao ◽

Nan Li ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Resistive Switching ◽

Atomic Layer ◽

The Self ◽