The optical and electrical properties regulation of TiO2 mesoporous thin film in perovskite solar cells

2020 ◽  
Author(s):  
Qian Li ◽  
Jiqiu Qi ◽  
Jian Song ◽  
Lei Zhu ◽  
Yulong Zhao
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electrical Properties ◽  
Perovskite Solar Cells ◽  
Optical And Electrical Properties ◽  
Mesoporous Thin Film

The charge carrier dynamics, efficiency and stability of two-dimensional material-based perovskite solar cells

2019 ◽  
Vol 48 (18) ◽  
pp. 4854-4891 ◽  
Author(s):  
Bing Wang ◽  
James Iocozzia ◽  
Meng Zhang ◽  
Meidan Ye ◽  
Shicheng Yan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Charge Carrier ◽  
2D Materials ◽  
Perovskite Solar Cells ◽  
Carrier Dynamics ◽  
Optical And Electrical Properties ◽  
Two Dimensional ◽  
Charge Carrier Dynamics ◽  
Recent Advances

Recent advances in the use of two-dimensional (2D) materials for perovskites solar cells (PSCs) are summarized. The effects of their unique optical and electrical properties on the charge carrier dynamics of PSCs are detailed.

Optical and electrical properties of solution processable TiOx thin films for solar cell and sensor applications

2011 ◽  
Vol 1352 ◽  
Author(s):  
Jiguang Li ◽  
Lin Pu ◽  
Mool C. Gupta
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Refractive Index ◽  
Solar Cells ◽  
Solar Cell ◽  
Electrical Properties ◽  
Thermal Annealing ◽  
Electrical Resistance ◽  
Optical And Electrical Properties

ABSTRACTRecently, few tens of nanometer thin films of TiOx have been intensively studied in applications for organic solar cells as optical spacers, environmental protection and hole blocking. In this paper we provide initial measurements of optical and electrical properties of TiOx thin films and it’s applications in solar cell and sensor devices. The TiOx material was made through hydrolysis of the precursor synthesized from titanium isopropoxide, 2-methoxyethanol, and ethanolamine. The TiOx thin films of thickness between 20 nm to 120 nm were obtained by spin coating process. The refractive index of TiOx thin films were measured using an ellipsometric technique and an optical reflection method. At room temperature, the refractive index of TiOx thin film was found to be 1.77 at a wavelength of 600 nm. The variation of refractive index under various thermal annealing conditions was also studied. The increase in refractive index with high temperature thermal annealing process was observed, allowing the opportunity to obtain refractive index values between 1.77 and 2.57 at a wavelength 600 nm. The refractive index variation is due to the TiOx phase and density changes under thermal annealing.The electrical resistance was measured by depositing a thin film of TiOx between ITO and Al electrode. The electrical resistivity of TiOx thin film was found to be 1.7×107 Ω.cm as measured by vertical transmission line method. We have also studied the variation of electrical resistivity with temperature. The temperature coefficient of electrical resistance for 60 nm TiOx thin film was demonstrated as - 6×10-3/°C. A linear temperature dependence of resistivity between the temperature values of 20 – 100 °C was observed.The TiOx thin films have been demonstrated as a low cost solution processable antireflection layer for Si solar cells. The results indicate that the TiOx layer can reduce the surface reflection of the silicon as low as commonly used vacuum deposited Si3N4 thin films.

Requirements for TCO Substrate in Si-based Thin Film Solar Cells -Toward Tandem

2008 ◽  
Vol 1101 ◽  
Author(s):  
Takuji Oyama ◽  
Mika Kambe ◽  
Naoki Taneda ◽  
Kunio Masumo
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electrical Properties ◽  
Quantum Efficiency ◽  
Wavelength Region ◽  
Transparent Conductive Oxide ◽  
Thin Film Solar Cells ◽  
Optical And Electrical Properties ◽  
Conductive Oxide

AbstractNewly developed SnO2:F films having “double–texture (W-texture)” were evaluated in terms of optical and electrical properties and compared with Asahi type-U substrate. “W-textured” transparent conductive oxide (TCO) film was composed of a combination of 300-500nm large hills and small pyramidal texture covering them. “W-textured” TCO could show a large haze value exceeding 80% even at 800nm. Microcrystalline Si (μc-Si:H) thin film solar cells were fabricated on these TCOs and characterized. The result showed that a quantum efficiency of μc-Si:H solar cells was improved with “W-textured” TCOs significantly in longer wavelength region.

Recent Advances in Inverted Lead-free Tin-Based Perovskite Solar Cells and Challenges

2021 ◽  
Author(s):  
Ligang Xu ◽  
Xiangyun Feng ◽  
Wenbo Jia ◽  
Wenxuan Lv ◽  
Anyi Mei ◽  
...  
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Perovskite Solar Cells ◽  
Lead Free ◽  
Optical And Electrical Properties ◽  
Recent Advances

Lead-based perovskite solar cells (PSCs) have gained considerable interest since 2009 owing to their excellent optical and electrical properties, achieving a certified efficiency of 25.5% over a 12-year period. However,...

scholarly journals Study on Optical and Electrical Properties of Thermally Evaporated Tin Oxide Thin Films for Perovskite Solar Cells

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1380
Author(s):  
Wen-Man Bin ◽  
Wen-Han Huang ◽  
Wei-Chun Lin ◽  
Hyeonseok Lee
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Perovskite Solar Cells ◽  
Transport Layer ◽  
Window Layer ◽  
Electron Transport Layer ◽  
Optical And Electrical Properties ◽  
Key Factor ◽  
Sno2 Thin Films

Perovskite solar cells were fabricated with SnO2 thin films as a window layer and electron transport layer by thermal evaporation. Fundamental characteristics of SnO2 thin films to determine the performance of solar cells were investigated in an optical and electrical manner, varying annealing temperatures. It is found the crystallinity and the presence of localized energy states play a key factor to control the properties of SnO2. In addition, XPS was used to confirm the stoichiometry of the SnO2 thin films, indicating a better charge collection on the annealed SnO2 samples. The SnO2 thin films annealed at 300 °C exhibited desirable optical and electrical properties for the enhanced performance of solar cells. The results show that thermally evaporated SnO2 thin films can be precisely engineered and controlled for mass production and more practical industrialization of perovskite solar cells.

scholarly journals Growth Temperature Influence on Atomic-Layer-Deposited In2O3 Thin Films and Their Application in Inorganic Perovskite Solar Cells

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2047
Author(s):  
Umme Farva ◽  
Hyeong Woo Lee ◽  
RiNa Kim ◽  
Dong-Gun Lee ◽  
Jeha Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Solar Cells ◽  
Electrical Properties ◽  
Growth Temperature ◽  
Film Growth ◽  
Perovskite Solar Cells ◽  
Atomic Layer ◽  
Optical And Electrical Properties ◽  
Film Growth Rate

Recently, indium oxide (In2O3) thin films have emerged as a promising electron transport layer (ETL) for perovskite solar cells; however, solution-processed In2O3 ETL suffered from poor morphology, pinholes, and required annealing at high temperatures. This research aims to carry out and prepare pinhole-free, transparent, and highly conductive In2O3 thin films via atomic layer deposition (ALD) seizing efficiently as an ETL. In order to explore the growth-temperature-dependent properties of In2O3 thin film, it was fabricated by ALD using the triethyl indium (Et3In) precursor. The detail of the ALD process at 115–250 °C was studied through the film growth rate, crystal structure, morphology, composition, and optical and electrical properties. The film growth rate increased from 0.009 nm/cycle to 0.088 nm/cycle as the growth temperature rose from 115 °C to 250 °C. The film thickness was highly uniform, and the surface roughness was below 1.6 nm. Our results confirmed that film’s structural, optical and electrical properties directly depend on film growth temperature. Film grown at ≥ 200 °C exhibited a polycrystalline cubic structure with almost negligible carbon impurities. Finally, the device ALD-In2O3 film deposited at 250 °C exhibited a power conversion efficiency of 10.97% superior to other conditions and general SnO2 ETL.

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