Solution-processed amorphous gallium oxide gate dielectric for low-voltage operation oxide thin film transistors

2021 ◽  
Vol 32 (7) ◽  
pp. 8347-8353
Author(s):  
Li Yuan ◽  
Shasha Li ◽  
Guoxiang Song ◽  
Xian wen Sun ◽  
Xinan Zhang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gallium Oxide ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Low Voltage Operation

SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film Transistors

MRS Advances ◽  
2018 ◽  
Vol 3 (49) ◽  
pp. 2931-2936
Author(s):  
G. Kitahara ◽  
K. Aoshima ◽  
J. Tsutsumi ◽  
H. Minemawari ◽  
S. Arai ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Base Layer ◽  
Organic Thin Film ◽  
Low Voltage Operation ◽  
Silver Electrodes

ABSTRACTRecently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPR-NaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes.

Ultra-Low Voltage Metal Oxide Thin Film Transistor by Low-Temperature Annealed Solution Processed LiAlO2 Gate Dielectric

2019 ◽  
Vol 16 (1) ◽  
pp. 22-34 ◽  
Author(s):  
Anand Sharma ◽  
Nitesh K. Chourasia ◽  
Vishwas Acharya ◽  
Nila Pal ◽  
Sajal Biring ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Metal Oxide ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Metal Oxide Thin Film

Low-temperature facile solution-processed gate dielectric for combustion derived oxide thin film transistors

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54729-54739 ◽  
Author(s):  
Han Wang ◽  
Tieyu Sun ◽  
Wangying Xu ◽  
Fangyan Xie ◽  
Lei Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Nitrate Solution ◽  
Aluminum Nitrate ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Dielectric Layers

An improved hydrophilic aluminum nitrate solution was designed to spin coat robust dielectric layers for thin film transistors.

Aqueous solution-deposited aluminum-gallium-oxide alloy gate dielectrics for low voltage fully oxide thin film transistors

2021 ◽  
Vol 119 (11) ◽  
pp. 112102
Author(s):  
Fuchao He ◽  
Yifei Wang ◽  
Zhenhua Lin ◽  
Jie Su ◽  
Jincheng Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Aqueous Solution ◽  
Thin Film Transistors ◽  
Gallium Oxide ◽  
Low Voltage ◽  
Gate Dielectrics ◽  
Oxide Thin Film
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