Field Effect Analysis in Low Voltage Operation a-Si:H Thin Film Transistors with Very Thin Pecvd a-SiO2 Gate Dielectric

1992 ◽  
pp. 27-31
Author(s):  
P. Foglietti ◽  
G. Fortunato ◽  
L. Mariucci ◽  
C. Reita
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Effect Analysis ◽  
Low Voltage Operation

SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film Transistors

MRS Advances ◽  
2018 ◽  
Vol 3 (49) ◽  
pp. 2931-2936
Author(s):  
G. Kitahara ◽  
K. Aoshima ◽  
J. Tsutsumi ◽  
H. Minemawari ◽  
S. Arai ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Base Layer ◽  
Organic Thin Film ◽  
Low Voltage Operation ◽  
Silver Electrodes

ABSTRACTRecently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPR-NaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes.

Low voltage operation a-Si:H thin film transistors with very thin PECVD a-SiO2 gate dielectric

1989 ◽  
Vol 115 (1-3) ◽  
pp. 144-146 ◽  
Author(s):  
Guglielmo Fortunato ◽  
Luigi Mariucci ◽  
Carlo Reita ◽  
Piero Foglietti
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Low Voltage Operation

scholarly journals Low voltage operation of IGZO thin film transistors enabled by ultrathin Al2O3 gate dielectric

2018 ◽  
Vol 112 (2) ◽  
pp. 023501 ◽  
Author(s):  
Pengfei Ma ◽  
Lulu Du ◽  
Yiming Wang ◽  
Ran Jiang ◽  
Qian Xin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Low Voltage Operation ◽  
Al2o3 Gate Dielectric

High Field-Effect Mobility Two-Channel InGaZnO Thin-Film Transistors for Low-Voltage Operation

2021 ◽  
pp. 1-5
Author(s):  
Kwang-Ro Yun ◽  
Hwa-Seub Lee ◽  
Jong-Ho Kim ◽  
Tae-Ju Lee ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Field ◽  
Low Voltage ◽  
Field Effect Mobility ◽  
Low Voltage Operation

Low-Voltage a-InGaZnO Thin-Film Transistors With Anodized Thin HfO2 Gate Dielectric

2015 ◽  
Vol 36 (6) ◽  
pp. 573-575 ◽  
Author(s):  
Yang Shao ◽  
Xiang Xiao ◽  
Xin He ◽  
Wei Deng ◽  
Shengdong Zhang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage

scholarly journals Low-voltage operation of organic thin-film transistors based on ultrafine printed silver electrodes

2017 ◽  
Vol 50 ◽  
pp. 426-428 ◽  
Author(s):  
Gyo Kitahara ◽  
Keisuke Aoshima ◽  
Jun'ya Tsutsumi ◽  
Hiromi Minemawari ◽  
Shunto Arai ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Low Voltage Operation ◽  
Silver Electrodes
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