Promising Solution Processed Lanthanide Films as High-k Gate Insulators for Low Voltage-Driven Oxide Thin Film Transistors

2011 ◽  
Vol 14 (10) ◽  
pp. H426 ◽  
Author(s):  
Sungho Choi ◽  
Byung-Yoon Park ◽  
Sunho Jeong ◽  
Ha-Kyun Jung
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Gate Insulators ◽  
High K ◽  
Promising Solution

Solution-processed high-k magnesium oxide dielectrics for low-voltage oxide thin-film transistors

2016 ◽  
Vol 109 (18) ◽  
pp. 183508 ◽  
Author(s):  
Guixia Jiang ◽  
Ao Liu ◽  
Guoxia Liu ◽  
Chundan Zhu ◽  
You Meng ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnesium Oxide ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
High K

Solution-processed amorphous gallium oxide gate dielectric for low-voltage operation oxide thin film transistors

2021 ◽  
Vol 32 (7) ◽  
pp. 8347-8353
Author(s):  
Li Yuan ◽  
Shasha Li ◽  
Guoxiang Song ◽  
Xian wen Sun ◽  
Xinan Zhang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Gallium Oxide ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Low Voltage Operation

Solution Processed High-k Lanthanide Oxides for Low Voltage Driven Transparent Oxide Semiconductor Thin Film Transistors

2019 ◽  
Vol 35 (4) ◽  
pp. 901-908 ◽  
Author(s):  
Sungho Choi ◽  
Byung-Yoon Park ◽  
Mi Jang ◽  
Sunho Jeong ◽  
Ji-Yoon Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Oxide Semiconductor ◽  
Lanthanide Oxides ◽  
Solution Processed ◽  
High K ◽  
Transparent Oxide ◽  
Semiconductor Thin Film ◽  
Transparent Oxide Semiconductor

Effect of Gd3+ Doping on Sol–Gel Prepared Y2O3 Films as Gate Insulators for Oxide Thin Film Transistors

2021 ◽  
Vol 21 (9) ◽  
pp. 4694-4699
Author(s):  
Byung-Yoon Park ◽  
Sungho Choi ◽  
Taek Ahn
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Operating Voltage ◽  
Robust Solution ◽  
Gate Insulators ◽  
Low Leakage ◽  
Low Leakage Current

The relationships between the microstructure and the dielectric properties of sol–gel prepared Y2O3 films with various Gd3+ doping were systematically investigated. Robust solution processed lanthanide films, (Y1−xGdx)2O3 (0 < x ≤ 0.5), are demonstrated as high-k gate insulators for low voltage-driven oxide thin film transistors and their optimized composition is presented. With the proper amount of Gd3+ doping, the corresponding thin film insulators exhibit low leakage current with increased dielectric constant. The resultant Zn–Sn–O/(Y, Gd)2O3 TFT exhibits enhanced performance, by a factor of 10.7 compared with TFTs using a SiO2 insulator, with a field-effect mobility of ~3.15 cm2V−1s−1 and an exceptionally low operating voltage <15 V.

Low Temperature Solution Processed Hybrid Gate Insulators for High Performance Oxide Thin-Film Transistors

2020 ◽  
pp. 895
Author(s):  
Juan Paolo Bermundo ◽  
Ployrung Kesorn ◽  
Mami N. Fujii ◽  
Yasuaki Ishikawa ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
Solution Processed ◽  
Gate Insulators ◽  
Temperature Solution

Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors

2012 ◽  
Vol 22 (34) ◽  
pp. 17415 ◽  
Author(s):  
Christophe Avis ◽  
Youn Goo Kim ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Low Voltage ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Solution Processed

Role of high-k gate insulators for oxide thin film transistors

2010 ◽  
Vol 518 (11) ◽  
pp. 3030-3032 ◽  
Author(s):  
Sang Yeol Lee ◽  
Seongpil Chang ◽  
Jae-Sang Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Gate Insulators ◽  
High K
Sign in / Sign up

Export Citation Format

Share Document