Promising Solution Processed Lanthanide Films as High-k Gate Insulators for Low Voltage-Driven Oxide Thin Film Transistors

2011 ◽  
Vol 14 (10) ◽  
pp. H426 ◽  
Author(s):  
Sungho Choi ◽  
Byung-Yoon Park ◽  
Sunho Jeong ◽  
Ha-Kyun Jung
2016 ◽  
Vol 109 (18) ◽  
pp. 183508 ◽  
Author(s):  
Guixia Jiang ◽  
Ao Liu ◽  
Guoxia Liu ◽  
Chundan Zhu ◽  
You Meng ◽  
...  

2021 ◽  
Vol 21 (9) ◽  
pp. 4694-4699
Author(s):  
Byung-Yoon Park ◽  
Sungho Choi ◽  
Taek Ahn

The relationships between the microstructure and the dielectric properties of sol–gel prepared Y2O3 films with various Gd3+ doping were systematically investigated. Robust solution processed lanthanide films, (Y1−xGdx)2O3 (0 < x ≤ 0.5), are demonstrated as high-k gate insulators for low voltage-driven oxide thin film transistors and their optimized composition is presented. With the proper amount of Gd3+ doping, the corresponding thin film insulators exhibit low leakage current with increased dielectric constant. The resultant Zn–Sn–O/(Y, Gd)2O3 TFT exhibits enhanced performance, by a factor of 10.7 compared with TFTs using a SiO2 insulator, with a field-effect mobility of ~3.15 cm2V−1s−1 and an exceptionally low operating voltage <15 V.


2010 ◽  
Vol 518 (11) ◽  
pp. 3030-3032 ◽  
Author(s):  
Sang Yeol Lee ◽  
Seongpil Chang ◽  
Jae-Sang Lee

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