Erratum to: Scaling of the Temperature Dependent Resistivity and Hall Effect in Ba(Fe1−x Co x )2As2

Polyaniline (PANI) is recognized as one of the most important conducting polymers due to its high conductivity and good stability. In this paper, polyaniline/silver (PANI/Ag) nanocomposites were synthesized by in-situ polymerization of aniline using ammonium peroxydisulphate (APS) as oxidizing agent with varying concentration of Ag nanoparticles colloids (0 ml, 25 ml and 50 ml). Silver nanoparticles were synthesized separately in colloidal form from silver nitrate (Ag2NO3) with the help of reducing agent sodium borohydride (NaBH4). The PANI/ Ag nanocomposites were characterized by XRD, SEM, AFM, UV-visible, temperature dependent resistivity and dielectric measurements. All samples show a single phase nature of the nanoparticles. The electrical resistivity as function of temperature was measured in the temperature range 298–383 K, which indicates a semiconducting to metallic transition at 373 K and 368 K for 25 ml and 50 ml silver colloid samples, respectively.

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Scattering of electrons from fractons and magnons in dilute two-dimensional antiferromagnets: Temperature-dependent resistivity in high-Tccuprates

Physical Review B ◽

10.1103/physrevb.46.14095 ◽

1992 ◽

Vol 46 (21) ◽

pp. 14095-14100 ◽

Cited By ~ 4

Author(s):

Jian-Xin Li ◽

Qing Jiang ◽

Zhe-Hua Zhang ◽

De-Cheng Tian

Keyword(s):

Two Dimensional ◽

Temperature Dependent ◽

Temperature Dependent Resistivity

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Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method

Silicon Carbide and Related Materials 2005 - Materials Science Forum ◽

10.4028/0-87849-425-1.633 ◽

2006 ◽

pp. 633-636

Author(s):

Sylvie Contreras ◽

Marcin Zielinski ◽

Leszek Konczewicz ◽

Caroline Blanc ◽

Sandrine Juillaguet ◽

...

Keyword(s):

Hall Effect ◽

Temperature Dependent ◽

Hall Effect Measurements

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Insight into Channel Conduction Mechanisms of 4H-SiC(0001) MOSFET Based on Temperature-Dependent Hall Effect Measurement

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1004.620 ◽

2020 ◽

Vol 1004 ◽

pp. 620-626

Author(s):

Hironori Takeda ◽

Mitsuru Sometani ◽

Takuji Hosoi ◽

Takayoshi Shimura ◽

Hiroshi Yano ◽

...

Keyword(s):

Hall Effect ◽

Field Effect ◽

Elevated Temperatures ◽

Field Effect Transistors ◽

Free Carrier ◽

Oxide Semiconductor ◽

Thermal Excitation ◽

Temperature Dependent ◽

Conduction Mechanisms ◽

The Impact

Temperature-dependent Hall effect measurements were conducted to investigate the channel conduction mechanisms of 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). This method allows us to discriminate the impact of the density of mobile (free) carriers in the inversion channels and their net mobility on the performance of SiC MOSFETs. It was found that, while the free carrier ratio of SiC MOSFETs with conventional gate oxides formed by dry oxidation is below 4% at 300 K, increasing the free carrier ratio due to thermal excitation of trapped electrons from SiO2/SiC interfaces leads to an unusual improvement in the field-effect mobility of SiC MOSFETs at elevated temperatures. Specifically, a significant increase in free carrier density surpasses the mobility degradation caused by phonon scattering for thermally grown SiO2/SiC interfaces. It was also found that, although nitrogen incorporation in SiO2/SiC interfaces increases the free carrier ratio typically up to around 30%, introduction of an additional scattering factor associated with interface nitridation compensates for the moderate amount of thermally generated mobile carriers at high temperatures, indicating a fundamental drawback of nitridation of SiO2/SiC interfaces. On the basis of these findings, we discuss the channel conduction mechanisms of SiC MOSFETs.

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Interpretation of metallic and semiconducting temperature-dependent resistivity of La1−xNaxMnO3 (x=0.07, 0.13) manganites

Computational Materials Science ◽

10.1016/j.commatsci.2009.11.012 ◽

2010 ◽

Vol 47 (3) ◽

pp. 839-847 ◽

Cited By ~ 26

Author(s):

Dinesh Varshney ◽

D. Choudhary ◽

M.W. Shaikh

Keyword(s):

Temperature Dependent ◽

Temperature Dependent Resistivity

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Electrical Resistivity and Magnetoresistance of the δ-FeZn10 Complex Intermetallic Phase

MRS Proceedings ◽

10.1557/opl.2013.110 ◽

2013 ◽

Vol 1517 ◽

Author(s):

P. Koželj ◽

S. Jazbec ◽

J. Dolinšek

Keyword(s):

Electrical Resistivity ◽

Intermetallic Phase ◽

Structural Complexity ◽

Weak Localization ◽

Intrinsic Disorder ◽

Atomic Clusters ◽

Charge Carriers ◽

Temperature Dependent ◽

Temperature Dependent Resistivity ◽

Complex Metallic Alloys

ABSTRACTThe δ-FeZn10 phase possesses high structural complexity typical of complex metallic alloys: a giant unit cell comprising 556 atoms, polyhedral atomic order with icosahedrally-coordinated environments, fractionally occupied lattice sites and statistically disordered atomic clusters that introduce intrinsic disorder into the structure. The electrical resistivity is large and exhibits a maximum at about 220 K. The magnetoresistance is sizeable, amounting to 1.5 % at 2 K in 9 T field. The temperature–dependent resistivity is discussed within the frame of the theory of slow charge carriers, applicable to metallic systems with weak dispersion of the electronic bands, where the electron motion changes from ballistic to diffusive upon heating. A comparison to the theory of weak localization is also made.

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