Electrical Resistivity and Magnetoresistance of the δ-FeZn10 Complex Intermetallic Phase

2013 ◽  
Vol 1517 ◽  
Author(s):  
P. Koželj ◽  
S. Jazbec ◽  
J. Dolinšek
Keyword(s):  
Electrical Resistivity ◽  
Intermetallic Phase ◽  
Structural Complexity ◽  
Weak Localization ◽  
Intrinsic Disorder ◽  
Atomic Clusters ◽  
Charge Carriers ◽  
Temperature Dependent ◽  
Temperature Dependent Resistivity ◽  
Complex Metallic Alloys

ABSTRACTThe δ-FeZn10 phase possesses high structural complexity typical of complex metallic alloys: a giant unit cell comprising 556 atoms, polyhedral atomic order with icosahedrally-coordinated environments, fractionally occupied lattice sites and statistically disordered atomic clusters that introduce intrinsic disorder into the structure. The electrical resistivity is large and exhibits a maximum at about 220 K. The magnetoresistance is sizeable, amounting to 1.5 % at 2 K in 9 T field. The temperature–dependent resistivity is discussed within the frame of the theory of slow charge carriers, applicable to metallic systems with weak dispersion of the electronic bands, where the electron motion changes from ballistic to diffusive upon heating. A comparison to the theory of weak localization is also made.

Temperature-dependent electrical resistivity and magnetoresistance characteristics of Zn1−xVxO thin films above Mott critical density

2019 ◽  
Vol 34 (01) ◽  
pp. 2050011
Author(s):  
Debabrata Saha
Keyword(s):  
Thin Films ◽  
Electrical Resistivity ◽  
Critical Density ◽  
Weak Localization ◽  
Spin Splitting ◽  
Temperature Dependent ◽  
Static Disorder ◽  
Field Range ◽  
Spin Disorder ◽  
Disorder Scattering

Temperature-dependent (5–200 K) electrical resistivity and magnetoresistance (MR) measurements were carried out on [Formula: see text] (x = 0.5–4 at.%) thin films grown by pulsed laser deposition (PLD). The free electron concentration in the films was found to be in the range of [Formula: see text](1.7–4.7) [Formula: see text] which is much higher compared to the Mott critical density required for the onset of insulator-to-metal transition in ZnO. All the films exhibited small negative MR in the entire temperature and magnetic field range indicating weak-localization as the dominant effect. However, some unusual MR behavior was observed at 5 K for the film with highest static-disorder parameter. Such characteristics have been well-explained by considering the interplay of negative MR (arising due weak-localization and spin-disorder scattering) and positive MR (caused by s–d exchange interaction induced spin-splitting of the conduction band).

Weak Localization Effects in Fluorineintercalated Graphite Fibers

1990 ◽  
Vol 209 ◽  
Author(s):  
S.L. Di Vittorio ◽  
M.S. Dresselhaus ◽  
V. Bayot ◽  
L. Piraux ◽  
J-P. Issi ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Low Temperatures ◽  
Weak Localization ◽  
Temperature Dependent ◽  
Weak Magnetic Fields ◽  
Graphite Fibers ◽  
Temperature Dependent Resistivity ◽  
High Fields ◽  
Hole Interaction

ABSTRACTThe intercalation of fluorine into graphite introduces defects into the highly crystalline pristine fibers. These defectsare studied using temperature-dependent resistivity and magnetoresistance measurements. A logarithmic increase in resistivity at low temperature is observed, whereas the high temperature behavior is metallic. At weak magnetic fields and low temperatures, a negative magnetoresistance is observed, which becomes positive at high fields. These effects are explainedusing the two theories of weak localization and hole-hole interaction. In the light of TEM pictures of the microstructure of the fluorinated fibers, the origin of the defects in the intercalated fibers is discussed.

scholarly journals Electrical transport and magnetoresistance of double layered CMR manganites R1.2Sr1.8Mn2O7(R = La, Pr, Sm)

2017 ◽  
Vol 35 (2) ◽  
pp. 440-446 ◽  
Author(s):  
Y.S. Reddy
Keyword(s):  
Electrical Resistivity ◽  
Electrical Transport ◽  
Sol Gel ◽  
Variable Range Hopping ◽  
Temperature Dependent ◽  
Lanthanide Ion ◽  
Colossal Magnetoresistive ◽  
Temperature Range ◽  
Three Samples ◽  
Temperature Dependent Resistivity

Abstract Polycrystalline bulk samples of double layered (DL) colossal magnetoresistive (CMR) manganites R1.2Sr1.8Mn2O7 (R = La, Pr, Sm) were prepared by sol-gel method to study the effect of size of lanthanide ion on their magnetotransport properties. The electrical resistivity of the samples was investigated in the temperature range of 70 K to 300 K at different magnetic fields. The samples LSMO and PSMO show insulator-to-metal transition (IMT) behavior, while SSMO sample exhibits insulating behavior in the entire temperature range with a very large value of resistivity. The insulator-to-metal transition temperature (TIM) decreases from 123 K (LSMO) to 90 K (PSMO) and disappears in SSMO sample. To explain the electrical transport above TIM, the temperature dependent resistivity data (T > TIM) of all the samples were fitted to the equations of different conduction models. The results indicate that the conduction at T > TIM is due to Mott variable range hopping (VRH) mechanism in the LSMO and PSMO samples, while Efros-Shkloskii (ES) type of VRH model dominates the conduction process in the SSMO sample. All the three samples show increasing magnetoresistance (MR) even below TIM and the maximum MR is shown by LSMO (39 % at 75 K, 3 T).

Simulation of Temperature-Dependent Resistivity for Manganite La 1/3 Ca 2/3 MnO 3

2006 ◽  
Vol 23 (6) ◽  
pp. 1551-1553 ◽  
Author(s):  
Cao Shuo ◽  
Zhou Qing-Li ◽  
Guan Dong-Yi ◽  
Lu Hui-Bin ◽  
Yang Guo-Zhen
Keyword(s):  
Temperature Dependent ◽  
Temperature Dependent Resistivity

MAGNETIC BEHAVIOUR OF UPdAl, UCuGa AND UCuSn

1993 ◽  
Vol 07 (01n03) ◽  
pp. 850-854 ◽  
Author(s):  
V.H. TRAN ◽  
R. TROĆ
Keyword(s):  
Electrical Resistivity ◽  
Magnetic Susceptibility ◽  
Low Temperatures ◽  
Magnetic Behaviour ◽  
Type Structure ◽  
Complex Structures ◽  
Temperature Dependent ◽  
Antiferromagnetic Ordering

Magnetic susceptibility and electrical resistivity have been measured on UCuGa, UCu1+xSn1−x, (x=0 and 0.1), and UPdAl. The first two compounds, crystallizing in the hexagonal CaIn2-type structure, show at low temperatures an antiferromagnetic ordering probably with complex structures. UPdAl, which adopts the orthorhombic TiNiSi-type structure, was found to be a weakly temperature-dependent paramagnet down to 4.2 K.

Temperature dependent electrical resistivity of liquid Sn

2016 ◽  
Author(s):  
A. V. Prajapati ◽  
Y. A. Sonvane ◽  
H. P. Patel ◽  
P. B. Thakor
Keyword(s):  
Electrical Resistivity ◽  
Temperature Dependent

scholarly journals Квантовая когерентность и эффект Кондо в двумерном электронном газе магнитно-нелегированных гетероструктур AlGaN/GaN

2020 ◽  
Vol 54 (9) ◽  
pp. 962
Author(s):  
Н.К. Чумаков ◽  
И.А. Черных ◽  
A.Б. Давыдов ◽  
И.С. Езубченко ◽  
Ю.В. Грищенко ◽  
...  
Keyword(s):  
Kondo Effect ◽  
Electron Gas ◽  
Weak Localization ◽  
Zero Field ◽  
Dimensional Electron ◽  
Weak Antilocalization ◽  
Temperature Dependent ◽  
Localization Theory ◽  
Magnetic Transport ◽  
Dimensional Electron Gas

Abstract The unusual observation of the Kondo effect in the two-dimensional electron gas (2DEG) of magnetically undoped AlGaN/GaN heterostructures is reported. The temperature-dependent zero-field resistivity data exhibits an upturn below 120 K, while the standard low-temperature weak localization and then weak antilocalization behaviour is revealed at T → 0. Magnetic transport investigations of the system are performed in the temperature range of 0.1–300 K and at magnetic fields up to 8 T, applied perpendicularly to the 2DEG plane. The experimental data are analyzed in terms of the multichannel Kondo model for d _0 magnetic materials and weak localization theory taking into account the spin-orbit interaction.

SYNTHESIS, STRUCTURAL, OPTICAL AND ELECTRICAL PROPERTIES OF IN-SITU SYNTHESIZED POLYANILINE/SILVER NANOCOMPOSITES

2012 ◽  
Vol 05 (03) ◽  
pp. 1250026 ◽  
Author(s):  
FAHAD ALAM ◽  
SAJID ALI ANSARI ◽  
WASI KHAN ◽  
M. EHTISHAM KHAN ◽  
A. H. NAQVI
Keyword(s):  
Single Phase ◽  
In Situ Polymerization ◽  
Optical And Electrical Properties ◽  
Silver Colloid ◽  
Dielectric Measurements ◽  
Temperature Dependent ◽  
Colloidal Form ◽  
Uv Visible ◽  
Temperature Dependent Resistivity

Polyaniline (PANI) is recognized as one of the most important conducting polymers due to its high conductivity and good stability. In this paper, polyaniline/silver (PANI/Ag) nanocomposites were synthesized by in-situ polymerization of aniline using ammonium peroxydisulphate (APS) as oxidizing agent with varying concentration of Ag nanoparticles colloids (0 ml, 25 ml and 50 ml). Silver nanoparticles were synthesized separately in colloidal form from silver nitrate (Ag2NO3) with the help of reducing agent sodium borohydride (NaBH4). The PANI/ Ag nanocomposites were characterized by XRD, SEM, AFM, UV-visible, temperature dependent resistivity and dielectric measurements. All samples show a single phase nature of the nanoparticles. The electrical resistivity as function of temperature was measured in the temperature range 298–383 K, which indicates a semiconducting to metallic transition at 373 K and 368 K for 25 ml and 50 ml silver colloid samples, respectively.

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