Effect of Deposition Time on Properties of Ni–Cu Alloy Films Electrodeposited on ITO Coated Glass Substrates

AbstractThe annealing of Ag(40 at.% Cu) alloy films deposited on a Si substrate at 200 – 800 oC in vacuum has been conducted to investigate the formation of Cu3Si at the Ag-Si interface and its effects on adhesion and resistivity of Ag(Cu)/Si structure. Auger electron spectroscopy(AES) analysis showed that annealing at 200°C allowed a diffusion of Cu to the Si surface, leading to the significant reduction in Cu concentration in Ag(Cu) film and thus causing a rapid drop in resistivity. In addition, the segregated Cu to the Si surface reacts with Si, forming a continuous copper silicide at the Ag(Cu)/Si interface, which can contribute to an enhanced adhesion of Ag(Cu)/Si annealed at 200 oC. However, as the temperature increases above 300°C, the adhesion tends to decrease, which may be attributed to the agglomeration of copper silicide beginning at around 300°C.

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Deposition time dependent study of structural and optical properties of PbS thin films grown by CBD method

Recent Innovations in Chemical Engineering (Formerly Recent Patents on Chemical Engineering) ◽

10.2174/2405520413999200517123919 ◽

2020 ◽

Vol 13 ◽

Author(s):

Minakshi Chaudhary ◽

Yogesh Hase ◽

Ashwini Punde ◽

Pratibha Shinde ◽

Ashish Waghmare ◽

...

Keyword(s):

Thin Films ◽

Optical Properties ◽

Band Gap ◽

Deposition Time ◽

Secondary Growth ◽

Cost Effective ◽

Xrd Analysis ◽

Structural Morphology ◽

Glass Substrates ◽

Cbd Method

: Thin films of PbS were prepared onto glass substrates by using a simple and cost effective CBD method. Influence of deposition time on structural, morphology and optical properties have been investigated systematically. The XRD analysis revealed that PbS films are polycrystalline with preferred orientation in (200) direction. Enhancement in crystallinity and PbS crystallite size has been observed with increase in deposition time. Formation of single phase PbS thin films has been further confirmed by Raman spectroscopy. The surface morphology analysis revealed the formation of prismatic and pebble-like PbS particles and with increase in deposition time these PbS particles are separated from each other without secondary growth. The data obtained from the EDX spectra shows the formation of high-quality but slightly sulfur rich PbS thin films over the entire range of deposition time studied. All films show increase in absorption with increase in deposition time and a strong absorption in the visible and sub-band gap regime of NIR range of the spectrum with red shift in band edge. The optical band gap shows decreasing trend, as deposition time increases but it is higher than the band gap of bulk PbS.

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Seed Layer-Assisted Chemical Bath Deposition of Cu2O Nanoparticles on ITO-Coated Glass Substrates with Tunable Morphology, Crystallinity, and Optical Properties

Journal of Inorganic and Organometallic Polymers and Materials ◽

10.1007/s10904-021-02016-y ◽

2021 ◽

Author(s):

Forat H. Alsultany ◽

Sarmad Fawzi Hamza Alhasan ◽

Evan T. Salim

Keyword(s):

Optical Properties ◽

Chemical Bath Deposition ◽

Seed Layer ◽

Coated Glass ◽

Glass Substrates ◽

Cu2o Nanoparticles ◽

Tunable Morphology

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Preparation and Properties of CdTe Films on Mo/Glass Substrates

MRS Proceedings ◽

10.1557/proc-1165-m08-24 ◽

2009 ◽

Vol 1165 ◽

Author(s):

Vello Valdna ◽

Maarja Grossberg ◽

Hiie Jaan ◽

Urve Kallavus ◽

Valdek Mikli ◽

...

Keyword(s):

Cadmium Chloride ◽

Radiation Detectors ◽

Cdte Film ◽

Chloride Flux ◽

Type Conductivity ◽

Coated Glass ◽

Glass Substrates ◽

Group I ◽

Cdte Films ◽

P Type

AbstractShort-bandgap group II-VI compound cadmium telluride is widely used for the infrared optics, radiation detectors, and solar cells where p-type CdTe is needed. p-type conductivity of CdTe is mainly caused by the chlorine-based A-centers, and in part, by the less stable copper-oxygen complexes. As a rule, CdTe films are recrystallized by the help of a cadmium chloride flux that saturates CdTe with chlorine. In chlorine-saturated CdTe A-centers are converted to isoelectronic complexes that cause resistivity increasement of CdTe up to 9 orders of magnitude. Excess copper and oxygen or group I elements as sodium also deteriorate the p-type conductivity of CdTe like excess chlorine. p-type conductivity of CdTe can be restored e.g. by the vacuum annealing which removes excess chlorine from the film. Unfortunately, treatment that betters p-type conductivity of the CdTe film degrades the junction of the superstrate configuration cells. In this work we investigate possibilities to prepare p-type CdTe films on the molybdenum coated glass substrates. Samples were prepared by the vacuum evaporation and dynamic recrystallization of 6N purity CdTe on the top of Mo-coated glass substrates. Then samples were recrystallized with cadmium chloride flux under tellurium vapour pressure. Results of the test studies on the structure and electronic parameters of samples are presented and discussed.

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