Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics

2017 ◽  
Vol 83 (3) ◽  
pp. 675-682 ◽  
Author(s):  
L. Zhu ◽  
G. He ◽  
Z. Q. Sun ◽  
M. Liu ◽  
S. S. Jiang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Gate Dielectrics ◽  
Optical And Electrical Properties ◽  
Temperature Dependent ◽  
High K

scholarly journals The effect of annealing temperature on the structural, optical, and electrical properties of CdS films

2010 ◽  
Vol 25 (1) ◽  
pp. 189-196 ◽  
Author(s):  
Hulya Metin ◽  
Mehmet Ari ◽  
Selma Erat ◽  
Semra Durmuş ◽  
Mehmet Bozoklu ◽  
...  
Keyword(s):  
Activation Energy ◽  
Phase Transformation ◽  
Electrical Properties ◽  
Electronic Transport ◽  
Annealing Temperature ◽  
Optical Band Gap ◽  
Urbach Energy ◽  
Band Gap Energy ◽  
Optical And Electrical Properties ◽  
Gap Energy

Cadmium sulfide (CdS) photocatalyst films were grown on glass by chemical bath deposition (pH 9.4, 70 °C) and then annealed in nitrogen from 423 K to 823 K in steps of 100 K. The XRD crystallite size increases in a sigmoidal manner from 60 nm to 100 nm while the optical band gap energy decreases from 2.42 eV to 2.28 eV. This trend is paralleled by the decreasing Urbach energy, but only up to 623 K, where it increases again. This is the temperature where the Cd effectively surpasses the phase transformation from cubic to hexagonal, and the activation energy for electronic transport drops by a factor of nearly two.

Sign in / Sign up

Export Citation Format

Share Document