Deposition temperature dependent optical and electrical properties of ALD HfO2 gate dielectrics pretreated with tetrakisethylmethylamino hafnium

2015 ◽  
Vol 70 ◽  
pp. 840-846 ◽  
Author(s):  
J. Gao ◽  
G. He ◽  
J.W. Zhang ◽  
Y.M. Liu ◽  
Z.Q. Sun
Sign in / Sign up

Export Citation Format

Share Document