The deep investigation of structural and opto-electrical properties of Yb2O3 thin films and fabrication of Al/Yb2O3/p-Si (MIS) Schottky barrier diode

2022 ◽  
Author(s):  
A. Panneerselvam ◽  
K. S. Mohan ◽  
R. Marnadu ◽  
J. Chandrasekaran
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Diode

The Electrical Properties of Au/P3HT/n-Type Si Schottky Barrier Diode

2016 ◽  
Vol 11 (2) ◽  
pp. 214-218
Author(s):  
A. Asimov ◽  
M. Ahmetoğlu ◽  
A. Kirsoy ◽  
M. Özer ◽  
M. Yasin
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Diode

Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode

2013 ◽  
Vol 534 ◽  
pp. 603-608 ◽  
Author(s):  
Koteswara Rao Peta ◽  
Byung-Guon Park ◽  
Sang-Tae Lee ◽  
Moon-Deock Kim ◽  
Jae-Eung Oh ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Deep Level ◽  
Schottky Barrier Diode

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 971-974
Author(s):  
Ho Keun Song ◽  
Jong Ho Lee ◽  
Myeong Sook Oh ◽  
Jeong Hyun Moon ◽  
Han Seok Seo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
High Quality ◽  
Ohmic Behavior ◽  
Leakage Path ◽  
Crystallographic Characteristics

Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane (BTMSM, C7H20Si2) precursor. The 4H-SiC substrates which had different crystallographic characteristics were used for the comparison of the crystallinity effect on the electrical properties of the SBDs. From the measurement of the reverse I-V characteristics of the SBDs with micropipes, it is shown that the origin of the main leakage path and early breakdown (or ohmic behavior in reverse bias) in 4H-SiC SBDs is the grain boundaries caused by the inclusions or other defects. The best performance of SBD were shown in the epilayer grown at 1440 oC using high quality substrate, and the breakdown voltage and reverse leakage current were about 450 V and 10-9 A/cm2, respectively.

Zirconia modified nanostructured MoO3 thin films deposited by spray pyrolysis technique for Cu/MoO3-ZrO2/p-Si structured Schottky barrier diode application

Optik ◽  
2019 ◽  
Vol 199 ◽  
pp. 163351 ◽  
Author(s):  
P. Vivek ◽  
J. Chandrasekaran ◽  
R. Marnadu ◽  
S. Maruthamuthu ◽  
V. Balasubramani ◽  
...  
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Schottky Barrier ◽  
Spray Pyrolysis Technique ◽  
Schottky Barrier Diode

Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode

2015 ◽  
Vol 821-823 ◽  
pp. 563-566
Author(s):  
Hyun Jin Jung ◽  
Seung Bok Yun ◽  
In Ho Kang ◽  
Jeong Hyun Moon ◽  
Won Jeong Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Harmful Effect ◽  
Stacking Faults ◽  
Optical Microscope ◽  
Stacking Fault ◽  
Schottky Barrier Diode ◽  
The Other ◽  
Room Temperature Photoluminescence

The influence of stacking faults (SFs) and triangular defects (TDs) on the electrical properties of 4H-SiC Schottky barrier diode (SBD) were investigated. The SF types and locations were distinguished and mapped by using room-temperature photoluminescence (PL) and optical microscope. SBDs were fabricated including the location of SF’s and TD’s. The effects of the types of defects and its area portion in the fabricated SBDs were also investigated. Based on the present data, 3C-TD has more harmful effect rather than the other SFs. The fabricated SBDs including SFs showed that increase of area portion of SF’s also resulted increase of specific on resistance of SBDs.

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