Mechanism of dark current dependence on reverse voltage in mid-wavelength infrared HgCdTe mesa PIN avalanche diode

2021 ◽  
Vol 53 (1) ◽  
Author(s):  
Bicheng Chen ◽  
Qing Li ◽  
Jin Chen ◽  
Guanhai Li ◽  
Xiaoshuang Chen ◽  
...  
Author(s):  
Alan Roe ◽  
Samantha Dodd

This chapter synthesizes statistical information evidencing the proposition that extractive industries are of great significance in many low- and middle-income developing economies, and so to their development prospects. It examines the scale of the current dependence of low- and middle-income economies on both types of extractive resources: metals, and oil and gas. The chapter also assesses how country levels of dependence have changed in the past twenty years, showing that there has been a clear upward trend based on exports. The chapter outlines how the upward trend has continued in many countries despite the recent commodity price collapse, and assesses some of the consequences of that collapse.


Nano Today ◽  
2021 ◽  
Vol 37 ◽  
pp. 101081
Author(s):  
Woongsik Jang ◽  
Byung Gi Kim ◽  
Seungju Seo ◽  
Ahmed Shawky ◽  
Min Soo Kim ◽  
...  

Author(s):  
S. Bettoni ◽  
P. Craievich ◽  
M. Pedrozzi ◽  
M. Schaer ◽  
L. Stingelin

2012 ◽  
Vol 1432 ◽  
Author(s):  
Ryan M. France ◽  
Myles A. Steiner

ABSTRACTInitial tests are performed regarding the degradation of lattice-mismatched GaInAs solar cells. 1eV metamorphic GaInAs solar cells with 1-2×106 cm-2 threading dislocation density in the active region are irradiated with an 808 nm laser for 2 weeks time under a variety of temperature and illumination conditions. All devices show a small degradation in Voc that is logarithmic with time. The absolute loss in performance after 2 weeks illuminated at 1300 suns equivalent and 125°C is 7 mV Voc and 0.2% efficiency, showing these devices to be relatively stable. The dark current increases with time and is analyzed with a two-diode model. A GaAs control cell degrades at the same rate, suggesting that the observed degradation mechanism is not related to the additional dislocations in the GaInAs devices.


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