On the Texture Weakening During Electropulse Annealing Treatment of Mg-1Ce Alloy: The Role of Nucleation and Nucleus Growth

2020 ◽  
Vol 51 (12) ◽  
pp. 6640-6657
Author(s):  
Jie Kuang ◽  
Xinpeng Du ◽  
Talal Al-Samman ◽  
Xiaohui Li ◽  
Gang Liu ◽  
...  
Keyword(s):  
Annealing Treatment ◽  
Nucleus Growth

The Control Of Intrinsic Stresses In Cvd Diamond Films With Multistep Processing

1995 ◽  
Vol 416 ◽  
Author(s):  
S. Nijhawan ◽  
S. M. Jankovsky ◽  
B. W. Sheldon
Keyword(s):  
Thermal Stresses ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Annealing Treatment ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Internal Stresses ◽  
Tensile Stresses ◽  
Si Substrates

ABSTRACTThe role of intrinsic stresses in diamond films is examined. The films were deposited on (100) Si substrates by microwave plasma-enhanced chemical vapor deposition. The total internal stresses (thermal and intrinsic) were measured at room temperature with the bending plate method. The thermal stresses are compressive and arise due to the mismatch in thermal expansion coefficient of film and substrate. The intinsic stresses were tensile and evolved during the deposition process. These stresses increased with increasing deposition time. A 12 hour intermediate annealing treatment was found to reduce the tensile stresses considerably. The annealing treatment is most effective when the diamond crystallites are undergoing impingement and coalescence. This is consistent with the theory that the maximum tensile stresses are associated with grain boundary energetics.

Molybdenum oxide 2-D flakes: role of thickness and annealing treatment on the optoelectronic properties of the material

2018 ◽  
Vol 53 (8) ◽  
pp. 6147-6156 ◽  
Author(s):  
A. Domínguez ◽  
A. Dutt ◽  
O. de Melo ◽  
L. Huerta ◽  
G. Santana
Keyword(s):  
Molybdenum Oxide ◽  
Annealing Treatment ◽  
Optoelectronic Properties

Strength and Ductility in Electrodeposited Nanocrystalline Nickel

2009 ◽  
Vol 633-634 ◽  
pp. 411-420 ◽  
Author(s):  
Heather W. Yang ◽  
Farghalli A. Mohamed
Keyword(s):  
Grain Size ◽  
Grain Growth ◽  
Annealing Treatment ◽  
Average Grain Size ◽  
Annealing Twins ◽  
Grain Distribution ◽  
Small Grains ◽  
20 Nm ◽  
Strength And Ductility

Electrodeposited nanocrystalline (nc) Ni having an average grain size of 20 nm was annealed at 443 K for different holding times. An examination of the microstructure following annealing showed three important features. First, all annealed samples exhibited abnormal grain growth, which was manifested by the presence of large grains that were surrounded by regions of small grains (bimodal grain distributions). Second, annealing twins existed in the large grains of the samples that showed a bimodal grain distribution. Third, by estimating the density of annealing twin, it was found that annealing nc-Ni at 443 K resulted in a maximum twin density after 5h. Following annealing treatment, specimens with different volume fractions of twins were tested under uniaxial tension at 393 K and a strain rate of 10-4 s-1. The results showed that both strength and ductility in nc-Ni attained maximum values after annealing for 5h. The role of both bimodal grain distributions and annealing twins in enhancing ductility and strength was discussed.

scholarly journals Comparing the role of annealing on the transport properties of polymorphous AgBiSe2 and monophase AgSbSe2

RSC Advances ◽  
2018 ◽  
Vol 8 (13) ◽  
pp. 7055-7061 ◽  
Author(s):  
Minmin Zou ◽  
Qing Liu ◽  
Chao-Feng Wu ◽  
Tian-Ran Wei ◽  
Qing Tan ◽  
...  
Keyword(s):  
Transport Properties ◽  
Annealing Treatment

Annealing treatment has different impact on the transport properties of polymorphous AgBiSe2 and monophase AgSbSe2.

Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers

Open Physics ◽  
2011 ◽  
Vol 9 (1) ◽  
Author(s):  
Peter Hockicko ◽  
Peter Bury ◽  
Peter Sidor ◽  
Hikaru Kobayashi ◽  
Masao Takahashi ◽  
...  
Keyword(s):  
Deep Level ◽  
Annealing Treatment ◽  
Interface States ◽  
Acid Oxidation ◽  
Electrical Measurements ◽  
External Bias ◽  
Transient Spectroscopy ◽  
Mos Structures ◽  
Dlts Spectra

AbstractA set of MOS structures with thin SiO2 layers prepared by nitric acid oxidation (NAOS) method was investigated using acoustic deep level transient spectroscopy (A-DLTS) to explain the role of annealing treatment (post-oxidation annealing (POA) and post-metallization annealing (PMA)) at different conditions on the distribution of interface states. The activation energies of interface states and the corresponding capture cross-section were calculated both from Arrhenius plots constructed for individual peaks of the A-DLTS spectra and applying the method of modeling of measured acoustic spectra. The energy distribution of the interface states was determined also from the dependence of acoustoelectric response signal (ARS) on the external bias voltage (U ac - V G curves). By comparing the A-DLTS spectra, U ac - V G characteristics and some electrical measurements (G-V, I-V curves) of investigated MOS structures with no treatment with those treated with POA and/or PMA, the role of individual treatments was observed. The definite decrease of the interface states in the structures with the PMA treatment in comparison with the POA treatment was confirmed too.

Evolution of the elastic modulus of Zr–Cu–Al BMGs during annealing treatment and crystallization: Role of Zr/Cu ratio

2015 ◽  
Vol 421 ◽  
pp. 35-40 ◽  
Author(s):  
M. Idriss ◽  
F. Célarié ◽  
Y. Yokoyama ◽  
F. Tessier ◽  
T. Rouxel
Keyword(s):  
Elastic Modulus ◽  
Annealing Treatment

Transmission Electron Microscope Studies of O, C, N Precipitation in Crystalline Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
A. Bourret
Keyword(s):  
Crystalline Silicon ◽  
Annealing Treatment ◽  
High Resolution Electron Microscopy ◽  
Czochralski Silicon ◽  
Oxygen Precipitation ◽  
Transmission Electron ◽  
Resolution Electron ◽  
One Step ◽  
Precipitation Phenomena

ABSTRACTThe understanding of the precipitation phenomena of light non dopant Impurities has been recently improved thanks to high resolution electron microscopy and microanalysis. After a one-step annealing in Czochralski silicon long coesite (SIO2) ribbons are formed between 485° and 750°C; amorphous platelets (SIOx with x =1. 2 to 2) are formed between 650°C -1050°C. Silicon Interstitlals generated during the precipitation partly relax the strain energy associated with the volume change. These Interstltlals are also able to precipitate In various forms. After a two-step annealing both platelets and/or octahedra containing amorphous SIOx are formed. The role of carbon on oxygen precipitation Is important: It changes the nucleation parameters and gives a retardation phenomena In a two-step annealing treatment. Similar phenomena are observed in oxygen implanted silicon. The nucleation and growth process able to explain these observations is far from being well understood. The SIO2 polymorphism, the Important role of SI Interstitials and the mutual attraction between oxygen and carbon are some of the ingredients which explain this complexity.

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