scholarly journals Material quality characterization of CdZnTe substrates for HgCdTe epitaxy

2006 ◽  
Vol 35 (6) ◽  
pp. 1495-1502 ◽  
Author(s):  
G. A. Carini ◽  
C. Arnone ◽  
A. E. Bolotnikov ◽  
G. S. Camarda ◽  
R. De Wames ◽  
...  
Keyword(s):  
Material Quality ◽  
Cdznte Substrates

Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy

1995 ◽  
Vol 24 (5) ◽  
pp. 505-510 ◽  
Author(s):  
W. J. Everson ◽  
C. K. Ard ◽  
J. L. Sepich ◽  
B. E. Dean ◽  
G. T. Neugebauer ◽  
...  
Keyword(s):  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Etch Pit ◽  
Cdznte Substrates

Room Temperature Physical Characterization of Implanted 4H- and 6H-SiC

2012 ◽  
Vol 717-720 ◽  
pp. 589-592 ◽  
Author(s):  
Konstantinos Zekentes ◽  
Katerina Tsagaraki ◽  
Maria Androulidaki ◽  
Maria Kayambaki ◽  
Antonis Stavrinidis ◽  
...  
Keyword(s):  
Room Temperature ◽  
Physical Characterization ◽  
X Ray Diffraction ◽  
Material Quality ◽  
Characterization Methods ◽  
Static Induction Transistors ◽  
Processed Sample ◽  
Secondary Ion ◽  
Post Implantation

The purpose of the present study is to determine the appropriate physical characterization methods for evaluating material quality changes during the fabrication steps of a typical 4H-SiC Static Induction Transistors (SITs). The most important fabrication step in terms of material quality is the gate implantation and post-implantation annealing. For the purposes of the initial investigation, separate “witness” samples from the processed sample have been used for evaluating implantation and post-implantation annealing. Secondary Ion Mass Spectroscopy (SIMS), optical transmission, room-temperature photoluminescence (RTPL), High Resolution X-Ray diffraction (HRXRD) and C-V measurements with Hg-probe and electrochemical (ECV) cells have been investigated in the frame of the present study. HRXRD and ECV have been proved particularly suitable for characterizing the implanted layers.

scholarly journals Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth

2019 ◽  
Vol 48 (10) ◽  
pp. 6124-6137
Author(s):  
R. Haakenaasen ◽  
O. Lauten ◽  
E. Selvig ◽  
K. O. Kongshaug ◽  
E. J. Røer ◽  
...  
Keyword(s):  
Cdznte Substrates

Protocol for the characterization of single-wall carbon nanotube material quality

Carbon ◽  
2004 ◽  
Vol 42 (8-9) ◽  
pp. 1783-1791 ◽  
Author(s):  
Sivaram Arepalli ◽  
Pavel Nikolaev ◽  
Olga Gorelik ◽  
Victor G Hadjiev ◽  
Williams Holmes ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Single Wall Carbon Nanotube ◽  
Material Quality ◽  
Single Wall Carbon

Characterization of HgCdTe Films Grown on Large-Area CdZnTe Substrates by Molecular Beam Epitaxy

2017 ◽  
Vol 46 (9) ◽  
pp. 5374-5378 ◽  
Author(s):  
F. Erdem Arkun ◽  
Dennis D. Edwall ◽  
Jon Ellsworth ◽  
Sheri Douglas ◽  
Majid Zandian ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Large Area ◽  
Cdznte Substrates

Growth and characterization of hot-wall epitaxial CdTe on (111) HgCdTe and CdZnTe substrates

1993 ◽  
Vol 22 (8) ◽  
pp. 821-826 ◽  
Author(s):  
J. H. Tregilgas ◽  
C. F. Wan ◽  
H. Y. Liu
Keyword(s):  
Cdznte Substrates

scholarly journals Propagation of Crystal Defects during Directional Solidification of Silicon via Induction of Functional Defects

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 90
Author(s):  
Patricia Krenckel ◽  
Yusuke Hayama ◽  
Florian Schindler ◽  
Theresa Trötschler ◽  
Stephan Riepe ◽  
...  
Keyword(s):  
Casting Process ◽  
Crystal Defects ◽  
Structural Defects ◽  
High Concentration ◽  
Material Quality ◽  
Dislocation Densities ◽  
Functional Defect ◽  
Very High ◽  
Functional Defects

The introduction of directional solidified cast mono silicon promised a combination of the cheaper production via a casting process with monocrystalline material quality, but has been struggling with high concentration of structural defects. The SMART approach uses functional defects to maintain the monocrystalline structure with low dislocation densities. In this work, the feasibility of the SMART approach is shown for larger ingots. A G2 sized crystal with SMART and cast mono silicon parts has been analyzed regarding the structural defects via optical analysis, crystal orientation, and etch pit measurements. Photoluminescence measurements on passivated and processed samples were used for characterization of the electrical material quality. The SMART approach has successfully resulted in a crystal with mono area share over 90% and a confinement of dislocation structures in the functional defect region over the whole ingot height compared to a mono area share of down to 50% and extending dislocation tangles in the standard cast mono Si. Cellular structures in photoluminescence measurements could be attributed to cellular dislocation patterns. The SMART Si material showed very high and most homogeneous lifetime values enabling solar cell efficiencies up to 23.3%.

Morphological Characterization of Mycobacteriophage R1

1974 ◽  
Vol 32 ◽  
pp. 254-255
Author(s):  
B. L. Soloff ◽  
T. A. Rado
Keyword(s):  
Carbon Source ◽  
Stationary Phase ◽  
Growth Phase ◽  
Minimal Medium ◽  
Morphological Characterization ◽  
Logarithmic Growth Phase ◽  
Complete Lysis ◽  
Lysogenic Culture ◽  
Logarithmic Growth

Mycobacteriophage R1 was originally isolated from a lysogenic culture of M. butyricum. The virus was propagated on a leucine-requiring derivative of M. smegmatis, 607 leu−, isolated by nitrosoguanidine mutagenesis of typestrain ATCC 607. Growth was accomplished in a minimal medium containing glycerol and glucose as carbon source and enriched by the addition of 80 μg/ ml L-leucine. Bacteria in early logarithmic growth phase were infected with virus at a multiplicity of 5, and incubated with aeration for 8 hours. The partially lysed suspension was diluted 1:10 in growth medium and incubated for a further 8 hours. This permitted stationary phase cells to re-enter logarithmic growth and resulted in complete lysis of the culture.

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