Investigation on Na Acceptor Level in p-Type Na-Doped ZnMgO Thin Films Prepared by Pulsed Laser Deposition

2019 ◽  
Vol 48 (6) ◽  
pp. 3554-3561 ◽  
Author(s):  
Jiyu Huang ◽  
Cong Chen ◽  
Haiping He ◽  
Chuhan Sha ◽  
Zhizhen Ye
2019 ◽  
Vol 15 (34) ◽  
pp. 41-54
Author(s):  
Iqbal S. Naji

The influence of sintering and annealing temperatures on the structural, surface morphology, and optical properties of Ag2Cu2O4 thin films which deposited on glass substrates by pulsed laser deposition method have been studied. Ag2Cu2O4 powders have polycrystalline structure, and the Ag2Cu2O4 phase was appear as low intensity peak at 35.57o which correspond the reflection from (110) plane. Scan electron microscopy images of Ag2Cu2O4 powder has been showed agglomerate of oxide particles with platelets shape. The structure of thin films has been improved with annealing temperature. Atomic Force micrographs of Ag2Cu2O4 films showed uniform, homogenous films and the shape of grains was almost spherical and larger grain size of 97.85 nm has obtained for film sintered at 600 °C. The optical band gap was increase from 1.6 eV to 1.65 eV when sintering temperature increased to 300 °C and decrease to 1.45 eV at 600 °C for the films deposited at room temperature. Heat treatment of films has been increased the energy band with increasing sintering temperature. Hall coefficient of Ag2Cu2O4 films have a positive sign which means the charge carrier is a p-type. The electrical conductivity decreases with increasing of the sintering temperature for as deposited and annealed films.


1995 ◽  
Vol 388 ◽  
Author(s):  
W. P. Shen ◽  
H. S. Kwok

AbstractIn this paper the results on p-type ZnS, ZnSe, CdS and CdSe thin films grown by pulsed laser deposition will be discussed. these films were deposited on GaAs substrates. Li-doping has been shown to be effective in producing p-type II-VI thin films, while in-doping is excellent for n-type CdS and CdSe thin films. No post-annealing process was used. these preliminary results suggest a possible new approach through pulsed laser deposition to solve the doping problem of II-VI compound semiconductors.


ACS Nano ◽  
2020 ◽  
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pp. 3290-3298
Author(s):  
M. M. Juvaid ◽  
Soumya Sarkar ◽  
Pranjal Kumar Gogoi ◽  
Siddhartha Ghosh ◽  
Meenakshi Annamalai ◽  
...  

2008 ◽  
Vol 93 (3) ◽  
pp. 593-598 ◽  
Author(s):  
H. Kim ◽  
A. Cepler ◽  
C. Cetina ◽  
D. Knies ◽  
M. S. Osofsky ◽  
...  

2007 ◽  
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pp. 5067-5069 ◽  
Author(s):  
Xinhua Pan ◽  
Zhizhen Ye ◽  
Jiesheng Li ◽  
Xiuquan Gu ◽  
Yujia Zeng ◽  
...  

2015 ◽  
Vol 347 ◽  
pp. 96-100 ◽  
Author(s):  
Ramanjaneyulu Mannam ◽  
Senthil Kumar Eswaran ◽  
Nandita DasGupta ◽  
M.S. Ramachandra Rao

APL Materials ◽  
2020 ◽  
Vol 8 (9) ◽  
pp. 091115
Author(s):  
P. Storm ◽  
M. S. Bar ◽  
G. Benndorf ◽  
S. Selle ◽  
C. Yang ◽  
...  

2008 ◽  
Vol 516 (7) ◽  
pp. 1426-1430 ◽  
Author(s):  
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R.S. Ajimsha ◽  
A.S. Asha ◽  
K. RajeevKumar ◽  
M.K. Jayaraj

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