Tailoring the Post-Etching of Room-Temperature-Fabricated H and Ti Co-Doped ZnO Films for Efficient Harvested Light Trapping

2019 ◽  
Vol 48 (9) ◽  
pp. 5948-5958
Author(s):  
Bing Han ◽  
Junjie Li ◽  
Weiping Wang ◽  
Fu Yang ◽  
Tingting Wu ◽  
...  
Keyword(s):  
Room Temperature ◽  
Light Trapping ◽  
Zno Films ◽  
Doped Zno ◽  
Co Doped

Optical and electrical properties of H and V co-doped ZnO films sputtered at room temperature

Optik ◽  
2017 ◽  
Vol 128 ◽  
pp. 297-303 ◽  
Author(s):  
Xudong Meng ◽  
Wei Zheng ◽  
Bing Han ◽  
Shuo Li ◽  
Junping Cai ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Zno Films ◽  
Optical And Electrical Properties ◽  
Doped Zno ◽  
Co Doped

Room-temperature Ferromagnetism in Nanostructured Co-doped ZnO

2005 ◽  
Vol 877 ◽  
Author(s):  
M. Wei ◽  
N. Khare ◽  
K. A. Yates ◽  
D. Zhi ◽  
J. L. MacManus-Driscoll
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Room Temperature Ferromagnetism ◽  
Chemical Vapour ◽  
Zno Films ◽  
Transmission Electron Microscopy Analysis ◽  
Transmission Electron ◽  
Doped Zno ◽  
Co Doped

AbstractNanosized Co-doped ZnO samples were synthesized using an ultrasonic spray assisted chemical vapour deposition method. Microstructural and magnetic properties of these samples were studied. The room-temperature ferromagnetism was observed in the Co-doped ZnO. Also, x-ray analysis revealed a wurtzite ZnO structure with a small change of the lattice constants due to the doping of Co in ZnO. Raman spectroscopy of the Co-doped ZnO films indicated direct substitution of Co. Scanning electron microscopy showed nanostructured Co-doped ZnO with a ring or cup shape. Transmission electron microscopy analysis revealed nano grains within the rings of an average diameter of around 10 nm. Both energy dispersive spectroscopy and energy-filtered transmission electron microscopy indicated a uniform distribution of Co.

Raman Scattering Studies in Oxygen-Vacancy Induced Ferromagnetism of Co-Doped ZnO Films

2010 ◽  
Vol 654-656 ◽  
pp. 1844-1847 ◽  
Author(s):  
Shi Jian Chen ◽  
Kiyonori Suzuki
Keyword(s):  
Raman Scattering ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Vibration Mode ◽  
Oxygen Deficiency ◽  
Host Lattice ◽  
Zno Films ◽  
Doped Zno ◽  
Post Deposition ◽  
Co Doped

Zn1-xCoxO thin films ( ) have been grown on Si (100) substrates by pulsed laser deposition. The as-prepared films showed paramagnetic characteristics at room temperature, while the films after annealing in a H2 atmosphere exhibited clear ferromagnetic behaviors. Raman scattering has been used to study the influence of the post-deposition H2 annealing on the structural properties and consequently on the magnetic properties of Co-doped ZnO films. It is found that the post-deposition annealing increases defect oxygen vacancies in the host lattice and induces an additional Raman vibration mode. The ferromagnetism of Zn1-xCoxO is believed to be strongly related to the oxygen deficiency in ZnO.

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