Room temperature deposition of highly conductive and transparent hydrogen and tungsten co-doped ZnO films for thin film solar cells applications

2013 ◽  
Vol 110 ◽  
pp. 94-97 ◽  
Author(s):  
Yanfeng Wang ◽  
Xiaodan Zhang ◽  
Qian Huang ◽  
Changchun Wei ◽  
Ying Zhao
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Room Temperature ◽  
Thin Film Solar Cells ◽  
Zno Films ◽  
Temperature Deposition ◽  
Doped Zno ◽  
Co Doped ◽  
And Tungsten

Fabrication and post-chemical-etched surface texturing of H and Ti co-doped ZnO film for silicon thin-film solar cells

2017 ◽  
Vol 43 (12) ◽  
pp. 9382-9389 ◽  
Author(s):  
Yanfeng Wang ◽  
Jianmin Song ◽  
Guozhen Niu ◽  
Zhaohui Yang ◽  
Ziwei Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Surface Texturing ◽  
Thin Film Solar Cells ◽  
Zno Film ◽  
Silicon Thin Film ◽  
Doped Zno ◽  
Etched Surface ◽  
Co Doped

Moisture Resistant Ga-Doped ZnO Films with Highly Transparent Conductivity for Use in Window Layers of Thin-Film Solar Cells

2013 ◽  
Vol 1538 ◽  
pp. 209-214 ◽  
Author(s):  
H. -P. Song ◽  
H. Makino ◽  
S. Kishimoto ◽  
T. Yamamoto
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Relative Humidity ◽  
Sheet Resistance ◽  
Thin Film Solar Cells ◽  
Zno Films ◽  
Discharge System ◽  
Doped Zno ◽  
Relative Change ◽  
Moisture Resistant

ABSTRACTHighly transparent conductive Ga-doped ZnO (GZO) films are one of the promising transparent conductive oxide (TCO) films for use in electrodes of flat display panels and window layers of thin film solar cells. For the ZnO-based TCO films, the stability to damp-heat environment is a crucial issue for practical applications. We will report moisture resistant GZO codoped with indium films (GZO:In) on the basis of analysis of data obtained a damp-heat test for solar cells (85°C and 85% relative humidity for 1000 hours).We used ZnO sintered targets with contents of 3 wt% Ga2O3 and 0.25 wt% In2O3 to grow GZO:In films in ion plating with direct current arc-discharge system. GZO:In films with different thicknesses (0.1-1 μm) were deposited on glass substrates at 200°C under the O2 flow rate of 15 sccm. As the film thickness increased from 0.1 to 1 μm, the resistivity and sheet resistance decreased from 4.3 μΩm to 2.6 μΩm and from 42.7 Ω/Sq. to 2.6 Ω/Sq., respectively. And the average optical transmittance (Tav) in the range from 0.4 to 1 μm decreased from ∼ 86% to ∼ 75%. The GZO:In film with a thickness of ∼300 nm had a low sheet resistance of 10.5 Ω/Sq. and a Tav of 82.5%. After 1000 hours damp-heat (DH) test under 85°C and 85% relative humidity, the relative change of sheet resistance is 3.4% with a Hall mobility of 26.4 cm2/V.s and a Tav of 82.7% after test. The film thicker than 300 nm has a sheet resistance lower than 10 Ω/Sq. and a relative change of resistance of ∼3% after DH test.

Deposition Ga-doped ZnO films on PEN substrate at room temperature for thin film silicon solar cells

2012 ◽  
Vol 258 (16) ◽  
pp. 5943-5946 ◽  
Author(s):  
Ke Tao ◽  
Yun Sun ◽  
Hongkun Cai ◽  
Dexian Zhang ◽  
Ke Xie ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Room Temperature ◽  
Silicon Solar Cells ◽  
Zno Films ◽  
Thin Film Silicon ◽  
Doped Zno
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