Enhanced Electrical Properties of PVDF Thin Film by Addition of NaCl by Near-Electric-Field 3D Printing

2021 ◽  
Author(s):  
Andong Wang ◽  
Caifeng Chen ◽  
Jilong Qian ◽  
Fan Yang ◽  
Lu Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
3D Printing ◽  
Electric Field

Preparation and electrical properties of γ form poly(vinylidene fluoride) thin film by vapour deposition in the presence of an electric field

1991 ◽  
Vol 202 (2) ◽  
pp. 213-220 ◽  
Author(s):  
Akiyoshi Takeno ◽  
Norimasa Okui ◽  
Tetsuji Kitoh ◽  
Michiharu Muraoka ◽  
Susumu Umemoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Electric Field ◽  
Vapour Deposition ◽  
Vinylidene Fluoride ◽  
Poly Vinylidene Fluoride

scholarly journals Investigation of the Electrical Characteristics of Bilayer ZnO/In2O3 Thin-Film Transistors Fabricated by Solution Processing

Materials ◽  
2018 ◽  
Vol 11 (11) ◽  
pp. 2103 ◽  
Author(s):  
Hyeonju Lee ◽  
Xue Zhang ◽  
Jung Kim ◽  
Eui-Jik Kim ◽  
Jaehoon Park
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Electric Field ◽  
Metal Oxide ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Internal Electric Field ◽  
Bilayer Structure ◽  
Gate Bias ◽  
X Ray

Metal-oxide thin-film transistors (TFTs) have been developed as promising candidates for use in various electronic and optoelectronic applications. In this study, we fabricated bilayer zinc oxide (ZnO)/indium oxide (In2O3) TFTs by using the sol-gel solution process, and investigated the structural and chemical properties of the bilayer ZnO/In2O3 semiconductor and the electrical properties of these transistors. The thermogravimetric analysis results showed that ZnO and In2O3 films can be produced by the thermal annealing process at 350 °C. The grazing incidence X-ray diffraction patterns and X-ray photoemission spectroscopy results revealed that the intensity and position of characteristic peaks related to In2O3 in the bilayer structure were not affected by the underlying ZnO film. On the other hand, the electrical properties, such as drain current, threshold voltage, and field-effect mobility of the bilayer ZnO/In2O3 TFTs obviously improved, compared with those of the single-layer In2O3 TFTs. Considering the energy bands of ZnO and In2O3, the enhancement in the TFT performance is explained through the electron transport between ZnO and In2O3 and the formation of an internal electric field in the bilayer structure. In the negative gate-bias stress experiments, it was found that the internal electric field contributes to the electrical stability of the bilayer ZnO/In2O3 TFT by reducing the negative gate-bias-induced field and suppressing the trapping of holes in the TFT channel. Consequently, we suggest that the bilayer structure of solution-processed metal-oxide semiconductors is a viable means of enhancing the TFT performance.

Electrical Properties of RF Sputtered CdTe/CdS Thin Film Solar Cells

2009 ◽  
Vol 2 (1) ◽  
pp. 110-112 ◽  
Author(s):  
Sheeja Krishnan ◽  
Ganesh Sanjeev ◽  
Manjunatha Pattabi ◽  
X. Mathew
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electrical Properties ◽  
Thin Film Solar Cells ◽  
Cds Thin Film

Electric Field Control of the Magnetic Weyl Fermion in an Epitaxial SrRuO 3 (111) Thin Film

2021 ◽  
pp. 2101316
Author(s):  
Weinan Lin ◽  
Liang Liu ◽  
Qing Liu ◽  
Lei Li ◽  
Xinyu Shu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Field Control ◽  
Weyl Fermion

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

The electrical properties of cerium sulphide thin film

1985 ◽  
Vol 4 (2) ◽  
pp. 192-194
Author(s):  
G. Adachi ◽  
N. Imanaka ◽  
S. Matsubayashi ◽  
J. Shiokawa
Keyword(s):  
Thin Film ◽  
Electrical Properties
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