Design Principles of 22-nm SOI LDD-FinFETs for Ultra-Low-Power Analog Circuits

Author(s):  
Ankit Dixit ◽  
Pavan Kumar Kori ◽  
Chithraja Rajan ◽  
Dip Prakash Samajdar
2013 ◽  
Vol 284-287 ◽  
pp. 1627-1632
Author(s):  
Hsieh Chang Huang ◽  
Ching Tang Hsieh ◽  
Guang Lin Hsieh

An ultra-low power, portable, and easily implemented Holter recorder is necessary for patients or researchers of electrocardiogram (ECG). Such a Holter recorder with off-the-shelf components is realized with mixed signal processor (MSP) in this paper. To decrease the complexity of analog circuits and the interference of 60 Hz noise from power line, we use the MSP to implement a finite impulse response (FIR) filter which is equiripple design. We also integrate the ring buffer for the input samples and the symmetrical characteristic of the FIR filter for efficiently computing convolution. The experimental results show that the ECG output signal with the PQRST feature is easy to be distinguished. This ECG signal is recorded for 24 hours using a SD card. Furthermore, the ECG signal is transmitted with a smartphone via Bluetooth to decrease the burden of the Holter recorder. As a result, this paper uses the Lomb method for the spectral analysis of Heart Rate Variability (HRV) better than Fast Fourier Transform (FFT).


2013 ◽  
Vol 44 (7) ◽  
pp. 570-575 ◽  
Author(s):  
A. Mangla ◽  
M.-A. Chalkiadaki ◽  
F. Fadhuile ◽  
T. Taris ◽  
Y. Deval ◽  
...  

MRS Bulletin ◽  
2009 ◽  
Vol 34 (7) ◽  
pp. 530-536 ◽  
Author(s):  
Brian R. Bennett ◽  
Mario G. Ancona ◽  
J. Brad Boos

AbstractResearch in n-channel field-effect transistors based upon III–V compound semiconductors has been very productive over the last 30 years, with successful applications in a variety of high-speed analog circuits. For digital applications, complementary circuits are desirable to minimize static power consumption. Hence, p-channel transistors are also needed. Unfortunately, hole mobilities are generally much lower than electron mobilities for III–V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have been grown with the channel material in 1–2% compressive strain. The strain modifies the valence band structure, resulting in hole mobilities as high as 1500 cm2/Vs. The next steps toward an ultra-low-power complementary metal oxide semiconductor technology will include development of a compatible insulator technology and integration of n- and p-channel transistors.


2016 ◽  
Vol 136 (11) ◽  
pp. 1555-1566 ◽  
Author(s):  
Jun Fujiwara ◽  
Hiroshi Harada ◽  
Takuya Kawata ◽  
Kentaro Sakamoto ◽  
Sota Tsuchiya ◽  
...  

2010 ◽  
Vol E93-C (6) ◽  
pp. 785-795
Author(s):  
Sung-Jin KIM ◽  
Minchang CHO ◽  
SeongHwan CHO
Keyword(s):  
Rfid Tag ◽  

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