Amorphous chromium silicide formation in hydrogenated amorphous silicon

1998 ◽  
Vol 27 (11) ◽  
pp. 1268-1271 ◽  
Author(s):  
A. Kovsarian ◽  
J. M. Shannon
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicide Formation ◽  
Chromium Silicide ◽  
Hydrogenated Amorphous

Iron silicide formation on hydrogenated amorphous silicon

1996 ◽  
Vol 275 (1-2) ◽  
pp. 191-194 ◽  
Author(s):  
P. Grunow ◽  
H. Paes ◽  
C. Gatts ◽  
W. Losch
Keyword(s):  
Amorphous Silicon ◽  
Iron Silicide ◽  
Hydrogenated Amorphous Silicon ◽  
Silicide Formation ◽  
Hydrogenated Amorphous

Silicide formation by thermal annealing of Ni and Pd on hydrogenated amorphous silicon films

1985 ◽  
Vol 47 (3) ◽  
pp. 236-238 ◽  
Author(s):  
L. S. Hung ◽  
E. F. Kennedy ◽  
C. J. Palmstro/m ◽  
J. O. Olowolafe ◽  
J. W. Mayer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Silicide Formation ◽  
Hydrogenated Amorphous

UHV Interface Studies of Palladium Silicide Formation on Hydrogenated Amorphous Silicon Films

1986 ◽  
Vol 70 ◽  
Author(s):  
H. E. Rhodes ◽  
G. Apai ◽  
L. Rivaud ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Binding Energy ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Hydrogenated Amorphous Silicon ◽  
Binding Energies ◽  
Silicide Formation ◽  
Silicide Growth ◽  
Palladium Silicide ◽  
Hydrogenated Amorphous

ABSTRACTSilicide formation by reaction of palladium metal (Pd0) with hydrogenated amorphous silicon (a-Si:H) substrates was studied with Rutherford backscattering spectrometry (RBS), forward recoil spectrometry, x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Upon low-temperature (200° C) annealing, RBS and TEM show a single-phase Pd2Si. This phase grows with the square root of time, and the activation energy is identical to that of the corresponding metal on single-crystal silicon substrates. The growth is slightly faster for hydrogenated amorphous silicon, which is attributed to its amorphous structure. During silicide formation, the hydrogen is released from silicides and presumably outdiffuses into a vacuum without interfacial accumulation. Thus, barrier formation does not occur, and the presence of hydrogen in the substrates has no effect on silicide growth.The silicide electronic structure (core level binding energies, lineshapes, and d-band filling) of Pd2 Si on a-Si:H is identical to that of Pd2 Si formed on cr stalline silicon. Binding energy and peak shape analysis show the Pd2Si/Pd0 interface to be composed of one additional phase, Pd4Si, which has a well-defined binding energy (335.8 eV) and a narrow (FWHM = 1.1 eV), symmetric line shape. It has long been postulated that interface phases may be important in determining the phase sequence in silicide growth and the dominant diffusing species. This Pd4 Si interface phase may be important in understanding palladium silicide growth.

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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