UHV Interface Studies of Palladium Silicide Formation on Hydrogenated Amorphous Silicon Films

1986 ◽  
Vol 70 ◽  
Author(s):  
H. E. Rhodes ◽  
G. Apai ◽  
L. Rivaud ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Binding Energy ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Hydrogenated Amorphous Silicon ◽  
Binding Energies ◽  
Silicide Formation ◽  
Silicide Growth ◽  
Palladium Silicide ◽  
Hydrogenated Amorphous

ABSTRACTSilicide formation by reaction of palladium metal (Pd0) with hydrogenated amorphous silicon (a-Si:H) substrates was studied with Rutherford backscattering spectrometry (RBS), forward recoil spectrometry, x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM). Upon low-temperature (200° C) annealing, RBS and TEM show a single-phase Pd2Si. This phase grows with the square root of time, and the activation energy is identical to that of the corresponding metal on single-crystal silicon substrates. The growth is slightly faster for hydrogenated amorphous silicon, which is attributed to its amorphous structure. During silicide formation, the hydrogen is released from silicides and presumably outdiffuses into a vacuum without interfacial accumulation. Thus, barrier formation does not occur, and the presence of hydrogen in the substrates has no effect on silicide growth.The silicide electronic structure (core level binding energies, lineshapes, and d-band filling) of Pd2 Si on a-Si:H is identical to that of Pd2 Si formed on cr stalline silicon. Binding energy and peak shape analysis show the Pd2Si/Pd0 interface to be composed of one additional phase, Pd4Si, which has a well-defined binding energy (335.8 eV) and a narrow (FWHM = 1.1 eV), symmetric line shape. It has long been postulated that interface phases may be important in determining the phase sequence in silicide growth and the dominant diffusing species. This Pd4 Si interface phase may be important in understanding palladium silicide growth.

Effect of Nitrogen Doping on the Structure and Optical Properties of N-Type Hydrogenated Amorphous Silicon Thin Films

2011 ◽  
Vol 383-390 ◽  
pp. 6980-6985
Author(s):  
Mao Yang Wu ◽  
Wei Li ◽  
Jun Wei Fu ◽  
Yi Jiao Qiu ◽  
Ya Dong Jiang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Gas Flow ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Frequency Plasma ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon (a-Si:H) thin films doped with both Phosphor and Nitrogen are deposited by ratio frequency plasma enhanced chemical vapor deposition (PECVD). The effect of gas flow rate of ammonia (FrNH3) on the composition, microstructure and optical properties of the films has been investigated by X-ray photoelectron spectroscopy, Raman spectroscopy and ellipsometric spectra, respectively. The results show that with the increase of FrNH3, Si-N bonds appear while the short-range order deteriorate in the films. Besides, the optical properties of N-doped n-type a-Si:H thin films can be easily controlled in a PECVD system.

Iron silicide formation on hydrogenated amorphous silicon

1996 ◽  
Vol 275 (1-2) ◽  
pp. 191-194 ◽  
Author(s):  
P. Grunow ◽  
H. Paes ◽  
C. Gatts ◽  
W. Losch
Keyword(s):  
Amorphous Silicon ◽  
Iron Silicide ◽  
Hydrogenated Amorphous Silicon ◽  
Silicide Formation ◽  
Hydrogenated Amorphous

Photo-Oxidation of Hydrogenated Amorphous Silicon-Carbon Alloys

1989 ◽  
Vol 158 ◽  
Author(s):  
P. John ◽  
I.M. Odeh ◽  
A. Qayyum ◽  
J.I.B. Wilson
Keyword(s):  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Discharge ◽  
Silicon Substrates ◽  
Capacitively Coupled ◽  
X Ray ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

ABSTRACTHydrogenated amorphous silicon-carbon alloys, a-Si:C:H, have been deposited as thin films (d=0.1-0.5 micron) on crystalline silicon substrates from a capacitively coupled rf discharge in silane-propane mixtures. Variations in the stoichiometry of the films were achieved by altering the ratio of SiH4 to C3H8 flow rates at a sbstrate temperature in the range 240-260°C and total pressure between 30-70 mtorr. The silicon to carbon ratios were established by X-ray photoelectron spectroscopy, XPS, and the hydrogen content and distribution by infra-red spectroscopy.

Silicide formation by thermal annealing of Ni and Pd on hydrogenated amorphous silicon films

1985 ◽  
Vol 47 (3) ◽  
pp. 236-238 ◽  
Author(s):  
L. S. Hung ◽  
E. F. Kennedy ◽  
C. J. Palmstro/m ◽  
J. O. Olowolafe ◽  
J. W. Mayer ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Silicide Formation ◽  
Hydrogenated Amorphous

Percolation Behaviour in the Electrical Characteristics of Hydrogenated Amorphous Silicon Nitride Films.

1992 ◽  
Vol 258 ◽  
Author(s):  
J.M. López-Villegas ◽  
B. Garrido ◽  
M.S. Benrakkad ◽  
J. Samitier ◽  
E. Bertran ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Photoelectron Spectroscopy ◽  
Hydrogenated Amorphous Silicon ◽  
Electrical Characteristics ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
Rf Glow Discharge ◽  
Ohmic Conductivity ◽  
Hydrogenated Amorphous

ABSTRACTThe electro-optical properties of hydrogenated amorphous silicon nitride films (a-SiNx:H) prepared by rf glow discharge of SiH4 and N2 have been determined as a function of the silicon content in the alloy. The stoichiometry and structure of the layers have been studied by ellipsometry, infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). Two different electrical behaviours have been found. The samples with x>0.8 show conductivity based on the Frenkel-Poole mechanism, while the samples with x<0.8 show quasi-ohmic conductivity. Both kinds of conduction and the transition between them are analyzed in the framework of the percolation theory. In this context, the correlation between the stoichiometry and structure of the layers with their electrical behaviour indicate that the transition from the Frenkel-Poole to the quasi-ohmic conduction is a consequence of the formation of conducting paths as the percolation threshold of Si-Si bonds is reached.

Valence band structure of hydrogenated amorphous silicon-carbon alloys studied by photoelectron spectroscopy

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 947-949 ◽  
Author(s):  
Yoshifumi Katayama ◽  
Toshikazu Shimada ◽  
Keisuke L.I. Kobayashi ◽  
Chang-gen Jiang ◽  
Hiroshi Daimon ◽  
...  
Keyword(s):  
Band Structure ◽  
Amorphous Silicon ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Hydrogenated Amorphous Silicon ◽  
Valence Band Structure ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous
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