Pt and W ohmic contacts to p-6H-SiC by focused ion beam direct-write deposition

ABSTRACTThe current transport mechanism in non-annealed Ohmic contact metallizations on p-type 6H-SiC formed by using focused ion beam (FIB) surface-modification and direct-write metal deposition is reported, and the properties of such focused ion beam assisted non-annealed contacts are discussed. The process uses a Ga focused ion beam to modify the surface of the semiconductor with different doses, and then introduces an organometallic compound in the Ga ion beam, to effect the direct-write deposition of a metal on the modified surface. Contact resistance measurements by the transmission line method produced values in the low 10-4 Ω cm2 range for surface-modified and direct-write Pt and W non-annealed contacts, and mid 10-5 Ω cm2 range for surface-modified and pulse laser deposited TiN contacts. The current transport mechanism of these contacts was examined and found to proceed mainly by tunneling through the metal-modified-semiconductor interface layer.

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Direct-write, focused ion beam-deposited, 7 K superconducting C–Ga–O nanowire

Applied Physics Letters ◽

10.1063/1.3458863 ◽

2010 ◽

Vol 96 (26) ◽

pp. 262511 ◽

Cited By ~ 11

Author(s):

Pashupati Dhakal ◽

G. McMahon ◽

S. Shepard ◽

T. Kirkpatrick ◽

J. I. Oh ◽

...

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Direct Write

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Focused Ion Beam Etching of GaN

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300003392 ◽

1999 ◽

Vol 4 (S1) ◽

pp. 769-774 ◽

Cited By ~ 1

Author(s):

C. Flierl ◽

I.H. White ◽

M. Kuball ◽

P.J. Heard ◽

G.C. Allen ◽

...

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Etching Rate ◽

Side Wall ◽

Device Fabrication ◽

Direct Write ◽

Ion Beam Etching ◽

Etched Surface ◽

A Current ◽

Established Technique

We have investigated the use of focused ion beam (FIB) etching for the fabrication of GaN-based devices. Although work has shown that conventional reactive ion etching (RIE) is in most cases appropriate for the GaN device fabrication, the direct write facility of FIB etching – a well-established technique for optical mask repair and for IC failure analysis and repair – without the requirement for depositing an etch mask is invaluable. A gallium ion beam of about 20nm diameter was used to sputter GaN material. The etching rate depends linearly on the ion dose per area with a slope of 3.5 × 10−4 μm3/pC. At a current of 3nA, for example, this corresponds to an each rate of 1.05 μm3/s. Good etching qualities have been achieved with a side wall roughness significantly below 0.1 μm. Change in the roughness of the etched surface plane stay below 8nm.

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Selective area two-dimensional electron gas structures and in situ ohmic contacts patterned by focused ion beam doping during molecular beam epitaxial growth

Journal of Crystal Growth ◽

10.1016/0022-0248(93)90722-9 ◽

1993 ◽

Vol 127 (1-4) ◽

pp. 732-736 ◽

Cited By ~ 10

Author(s):

J.H. Thompson ◽

G.A.C. Jones ◽

D.A. Ritchie ◽

E.H. Linfield ◽

M. Houlton ◽

...

Keyword(s):

Ohmic Contacts ◽

Molecular Beam ◽

Focused Ion Beam ◽

Ion Beam ◽

Dimensional Electron ◽

Molecular Beam Epitaxial ◽

Selective Area ◽

Dimensional Electron Gas ◽

Molecular Beam Epitaxial Growth

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Focused Ion Beam Direct Write Nanofabrication of Surface Phonon Polariton Metamaterial Nanostructures

Microscopy and Microanalysis ◽

10.1017/s1431927614003511 ◽

2014 ◽

Vol 20 (S3) ◽

pp. 358-359 ◽

Cited By ~ 1

Author(s):

N. D. Bassim ◽

A. Giles ◽

J. D. Caldwell ◽

L. E. Ocola

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Direct Write ◽

Surface Phonon ◽

Surface Phonon Polariton

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Commercial Applications and Review for Direct Write Technologies

MRS Proceedings ◽

10.1557/proc-624-3 ◽

2000 ◽

Vol 624 ◽

Cited By ~ 16

Author(s):

Kenneth H. Church ◽

Charlotte Fore ◽

Terry Feeley

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Chemical Vapor ◽

Direct Write ◽

Laser Chemical Vapor Deposition ◽

The Past ◽

Design Engineers ◽

True Value ◽

Making A Difference ◽

Commercial Applications

ABSTRACTDirect write in the past has generated the excitement of possibly replacing photoresist for all electronic applications. Removing the mask would substantially reduce the number of steps required to produce electronic circuits. A reduction in steps represented time and dollar savings. The advantage of being able to direct write a manufacturable device would also save time and money in the design process as well. With all of the obvious advantages, it seemed inevitable that research dollars would continue to mount and thus overcome the obstacles preventing this technology from becoming more than a novel technique used in laboratories. As Moore's law began to settle in, so did photoresist and direct write was little more than a novelty.That was then, and this is now. Developers have come to terms with the true value direct write can supply to the manufacturers and design engineers. Techniques such as Focused Ion Beam (FIB), Laser Chemical Vapor Deposition (LCVD), ink jetting and ink penning have found real applications that are making a difference in industry. A summary will be presented describing the various direct write techniques, their current applications and the possible or probable applications.

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Focused Ion Beam as a Direct-write Mask Tool for Patterning Diamond

Microscopy and Microanalysis ◽

10.1017/s1431927609096962 ◽

2009 ◽

Vol 15 (S2) ◽

pp. 328-329 ◽

Cited By ~ 4

Author(s):

W McKenzie ◽

J Pethica ◽

G Cross

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Direct Write

Extended abstract of a paper presented at Microscopy and Microanalysis 2009 in Richmond, Virginia, USA, July 26 – July 30, 2009

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Versatile Nanodeposition of Dielectrics and Metals by Non-contact Direct-Write Technology

MRS Proceedings ◽

10.1557/proc-758-ll4.5 ◽

2002 ◽

Vol 758 ◽

Cited By ~ 1

Author(s):

H. D. Wanzenboeck ◽

H. Langfischer ◽

S. Harasek ◽

B. Basnar ◽

H. Hutter ◽

...

Keyword(s):

Chemical Composition ◽

Focused Ion Beam ◽

Silicon Oxide ◽

Dielectric Material ◽

Ion Beam ◽

Solid Material ◽

Direct Write ◽

Micro Electro Mechanical Systems ◽

3 Dimensional ◽

Deposition Parameters

ABSTRACTDirect-write techniques allow processing in the nanometer range and have become powerful methods for rapid prototyping of microelectronic circuits and micro-electro-mechanical systems (MEMS). Chemical reactions are initiated by a focused beam leading to deposition of solid material on literally any surface. We have used this method to deposit metals such as tungsten and dielectrics such as silicon oxide using a focused ion beam (FIB) with 10 to 50 kV acceleration voltage. Controlled guidance of the beam allows deposition of both metallic and dielectric material with features in the 100 nm range. The deposition of separate structures of metallic and dielectric material deposited next to each other is shown on samples of different roughness. 3-dimensional exemplary prototypes in the sub-μm range and multilayer structures demonstrate the versatility of this method for prototyping and mix-and-match approaches with commercial semiconductor devices. A characterization of the deposited material was performed to clarify chemical composition and surface morphology of deposited structures. The deposition parameters were found to influence the chemical composition and electronic properties of the material. Direct-write deposition of dielectrics and metals by FIB allows fabrication of 3-dimensional prototypes with custom-tailored material properties.

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Fabrication and testing of custom vacuum encapsulations deposited by focused ion beam direct-write CVD

Sensors and Actuators A Physical ◽

10.1016/s0924-4247(01)00557-x ◽

2001 ◽

Vol 92 (1-3) ◽

pp. 249-256 ◽

Cited By ~ 11

Author(s):

Robert Puers ◽

Steve Reyntjens

Keyword(s):

Focused Ion Beam ◽

Ion Beam ◽

Direct Write

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Deposition Mechanism of Oxide Thin Films Manufactured by a Focused Energetic Beam Process

MRS Proceedings ◽

10.1557/proc-749-w17.8 ◽

2002 ◽

Vol 749 ◽

Cited By ~ 2

Author(s):

H.D. Wanzenboeck ◽

S. Harasek ◽

H. Langfischer ◽

E. Bertagnolli

Keyword(s):

Focused Ion Beam ◽

Silicon Oxide ◽

Ion Beam ◽

Chemical Vapor ◽

Solid Material ◽

Sample Surface ◽

Direct Write ◽

Large Area ◽

Mixture Ratio ◽

Process Energy

ABSTRACTChemical vapor deposition (CVD) is a versatile deposition technique for both dielectrics and metals. CVD is based upon the adsorption of a volatile species from the gas phase and the decomposition of the adsorbed molecules on the sample surface resulting in the deposition of solid material. In contrast to thermal CVD or plasma assisted CVD used for large area coatings this work focuses on a method for locally confined deposition. A focused energetic beam is used to provide the necessary activation energy for CVD. With a focused beam material could be deposited locally within a strictly confined area down to the nanometer range. The deposition of silicon oxide microstructures utilizing two precursor gases - siloxane and oxygen - was performed by direct-write nanolithography. For initiating the CVD process energy is introduced by local ion exposure utilizing a scanning focused ion beam (FIB). The influence of the different ion fluxes and the effect of the mixture ratio of precursors were studied. Deliberate changes in the process parameters allowed adjusting the physical properties and the chemical composition of the solid silicon oxide. Process control allows tailoring of material properties according to requirements of the application.

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