Commercial Applications and Review for Direct Write Technologies

2000 ◽  
Vol 624 ◽  
Author(s):  
Kenneth H. Church ◽  
Charlotte Fore ◽  
Terry Feeley
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Direct Write ◽  
Laser Chemical Vapor Deposition ◽  
The Past ◽  
Design Engineers ◽  
True Value ◽  
Making A Difference ◽  
Commercial Applications

ABSTRACTDirect write in the past has generated the excitement of possibly replacing photoresist for all electronic applications. Removing the mask would substantially reduce the number of steps required to produce electronic circuits. A reduction in steps represented time and dollar savings. The advantage of being able to direct write a manufacturable device would also save time and money in the design process as well. With all of the obvious advantages, it seemed inevitable that research dollars would continue to mount and thus overcome the obstacles preventing this technology from becoming more than a novel technique used in laboratories. As Moore's law began to settle in, so did photoresist and direct write was little more than a novelty.That was then, and this is now. Developers have come to terms with the true value direct write can supply to the manufacturers and design engineers. Techniques such as Focused Ion Beam (FIB), Laser Chemical Vapor Deposition (LCVD), ink jetting and ink penning have found real applications that are making a difference in industry. A summary will be presented describing the various direct write techniques, their current applications and the possible or probable applications.

Micro-RBS Analysis of Masklessly Fabricated Structures

1988 ◽  
Vol 128 ◽  
Author(s):  
A. Kinomura ◽  
M. Takai ◽  
T. Matsuo ◽  
M. Satou ◽  
M. Kiuchi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Ion Implantation ◽  
Laser Beam ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Local Distribution ◽  
Helium Ions ◽  
Laser Chemical Vapor Deposition

ABSTRACTRutherford backscattering (RBS) analysis of small-sized structures, fabricated by laser chemical vapor deposition (LCVD) with a focused laser beam and ion implantation with a focused ion beam (FIB), has been performed by a microprobe with focused 1.5 MeV helium ions. Micro-RBS spectra and RBS-mapping images revealed a local distribution of masklessly deposited Mo layers on GaAs and local doses of masklessly implanted Au atoms in Si.

Deposition Mechanism of Oxide Thin Films Manufactured by a Focused Energetic Beam Process

2002 ◽  
Vol 749 ◽  
Author(s):  
H.D. Wanzenboeck ◽  
S. Harasek ◽  
H. Langfischer ◽  
E. Bertagnolli
Keyword(s):  
Focused Ion Beam ◽  
Silicon Oxide ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Solid Material ◽  
Sample Surface ◽  
Direct Write ◽  
Large Area ◽  
Mixture Ratio ◽  
Process Energy

ABSTRACTChemical vapor deposition (CVD) is a versatile deposition technique for both dielectrics and metals. CVD is based upon the adsorption of a volatile species from the gas phase and the decomposition of the adsorbed molecules on the sample surface resulting in the deposition of solid material. In contrast to thermal CVD or plasma assisted CVD used for large area coatings this work focuses on a method for locally confined deposition. A focused energetic beam is used to provide the necessary activation energy for CVD. With a focused beam material could be deposited locally within a strictly confined area down to the nanometer range. The deposition of silicon oxide microstructures utilizing two precursor gases - siloxane and oxygen - was performed by direct-write nanolithography. For initiating the CVD process energy is introduced by local ion exposure utilizing a scanning focused ion beam (FIB). The influence of the different ion fluxes and the effect of the mixture ratio of precursors were studied. Deliberate changes in the process parameters allowed adjusting the physical properties and the chemical composition of the solid silicon oxide. Process control allows tailoring of material properties according to requirements of the application.

Fluorocarbon Precursor for High Aspect Ratio via Milling in Focused Ion Beam Modification of Integrated Circuits

2004 ◽  
Author(s):  
Valery Ray
Keyword(s):  
Side Effects ◽  
Aspect Ratio ◽  
Integrated Circuits ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Enabling Technology ◽  
Si Substrate ◽  
Ion Beam Modification ◽  
The Past

Abstract Gas Assisted Etching (GAE) is the enabling technology for High Aspect Ratio (HAR) circuit access via milling in Focused Ion Beam (FIB) circuit modification. Metal interconnect layers of microelectronic Integrated Circuits (ICs) are separated by Inter-Layer Dielectric (ILD) materials, therefore HAR vias are typically milled in dielectrics. Most of the etching precursor gases presently available for GAE of dielectrics on commercial FIB systems, such as XeF2, Cl2, etc., are also effective etch enhancers for either Si, or/and some of the metals used in ICs. Therefore use of these precursors for via milling in dielectrics may lead to unwanted side effects, especially in a backside circuit edit approach. Making contacts to the polysilicon lines with traditional GAE precursors could also be difficult, if not impossible. Some of these precursors have a tendency to produce isotropic vias, especially in Si. It has been proposed in the past to use fluorocarbon gases as precursors for the FIB milling of dielectrics. Preliminary experimental evaluation of Trifluoroacetic (Perfluoroacetic) Acid (TFA, CF3COOH) as a possible etching precursor for the HAR via milling in the application to FIB modification of ICs demonstrated that highly enhanced anisotropic milling of SiO2 in HAR vias is possible. A via with 9:1 aspect ratio was milled with accurate endpoint on Si and without apparent damage to the underlying Si substrate.

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

scholarly journals Direct-write, focused ion beam-deposited, 7 K superconducting C–Ga–O nanowire

2010 ◽  
Vol 96 (26) ◽  
pp. 262511 ◽  
Author(s):  
Pashupati Dhakal ◽  
G. McMahon ◽  
S. Shepard ◽  
T. Kirkpatrick ◽  
J. I. Oh ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Direct Write

Applications of Focused Ion Beam Technology in Bonding Failure Analysis for Microelectronic Devices

2011 ◽  
Vol 58-60 ◽  
pp. 2171-2176 ◽  
Author(s):  
Yuan Chen ◽  
Xiao Wen Zhang
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Failure Mechanisms ◽  
Microelectronic Device ◽  
Mechanism Study ◽  
Basic Principles ◽  
The Past ◽  
Microelectronic Devices ◽  
Bonding Failure

Focused ion beam (FIB) system is a powerful microfabrication tool which uses electronic lenses to focus the ion beam even up to nanometer level. The FIB technology has become one of the most necessary failure analysis and failure mechanism study tools for microelectronic device in the past several years. Bonding failure is one of the most common failure mechanisms for microelectronic devices. But because of the invisibility of the bonding interface, it is difficult to analyze this kind of failure. The paper introduced the basic principles of FIB technology. And two cases for microelectronic devices bonding failure were analyzed successfully by FIB technology in this paper.

Sign in / Sign up

Export Citation Format

Share Document