Effect of Substrate Surface Oxide Film Thickness on Deposition Behavior and Deposition Efficiency in the Cold Spray Process

Abstract The Cold Spray Process (CS) is a solid-state particle deposition process. Unlike thermal spray coating methods, the CS process does not involve melting of the particles and thus retains the desired original material properties along with oxide-free deposition. As the technology is of dynamic nature with high-velocity particle impacts, the bonding mechanism involved is hugely complicated to understand. Even though the CS process offers great benefits, its potential applications are restrained by a lack of knowledge of the complex operations involved. Preliminary research which used molecular dynamics (MD) simulation of the CS process revealed that factors including the angle of impact, size of particle and impact velocity significantly affect the material deposition. However, the preliminary study only considered a single particle impact during the coating process. The CS process involves the impact of multiple particles on the substrate surface depositing layer-by-layer. This research focuses on investigating the residual stresses distribution caused by the impact of multiple nanoparticles on the substrate surface during the CS process using MD simulation technique. The results obtained by this study are instrumental in further advancing the applications of the CS processes.

Download Full-text

Effect of Substrate Temperature on Deposition Behavior of Copper Particles on Substrate Surfaces in the Cold Spray Process

Journal of Thermal Spray Technology ◽

10.1007/s11666-007-9121-9 ◽

2007 ◽

Vol 16 (5-6) ◽

pp. 643-650 ◽

Cited By ~ 78

Author(s):

M. Fukumoto ◽

H. Wada ◽

K. Tanabe ◽

M. Yamada ◽

E. Yamaguchi ◽

...

Keyword(s):

Substrate Temperature ◽

Cold Spray ◽

Cold Spray Process ◽

Deposition Behavior ◽

Copper Particles ◽

Spray Process ◽

Substrate Surfaces

Download Full-text

Particle Velocity and Deposition Efficiency in the Cold Spray Process

CrossRef Listing of Deleted DOIs ◽

10.1361/105996399770350278 ◽

1999 ◽

Vol 8 (4) ◽

pp. 576-582 ◽

Cited By ~ 270

Author(s):

D.L. Gilmore ◽

R.C. Dykhuizen ◽

R.A. Neiser ◽

T.J. Roemer ◽

M.F. Smith

Keyword(s):

Cold Spray ◽

Particle Velocity ◽

Deposition Efficiency ◽

Cold Spray Process ◽

Spray Process

Download Full-text

Photoluminescence of ion-synthesized 9R-Si inclusions in SiO2/Si structure: Effect of irradiation dose and oxide film thickness

Applied Physics Letters ◽

10.1063/5.0052243 ◽

2021 ◽

Vol 118 (21) ◽

pp. 212101

Author(s):

Alena Nikolskaya ◽

Alexey Belov ◽

Alexey Mikhaylov ◽

Anton Konakov ◽

David Tetelbaum ◽

...

Keyword(s):

Oxide Film ◽

Film Thickness ◽

Irradiation Dose ◽

Structure Effect ◽

Oxide Film Thickness

Download Full-text

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

MRS Proceedings ◽

10.1557/proc-226-345 ◽

1991 ◽

Vol 226 ◽

Cited By ~ 3

Author(s):

Hideo Miura ◽

Hiroshi Sakata ◽

Shinji Sakata Merl

Keyword(s):

Residual Stress ◽

Raman Spectroscopy ◽

Tensile Stress ◽

Oxide Film ◽

Film Thickness ◽

Silicon Dioxide ◽

Thermal Oxidation ◽

Silicon Substrate ◽

Nitride Film ◽

Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

Download Full-text