Alloy Design Criteria for Solid Metal Dealloying of Thin Films

JOM ◽  
2017 ◽  
Vol 69 (11) ◽  
pp. 2199-2205 ◽  
Author(s):  
Ian McCue ◽  
Michael J. Demkowicz
Keyword(s):  
Thin Films ◽  
Solid Metal ◽  
Alloy Design ◽  
Design Criteria

scholarly journals Toughness enhancement in hard ceramic thin films by alloy design

APL Materials ◽  
2013 ◽  
Vol 1 (4) ◽  
pp. 042104 ◽  
Author(s):  
H. Kindlund ◽  
D. G. Sangiovanni ◽  
L. Martínez-de-Olcoz ◽  
J. Lu ◽  
J. Jensen ◽  
...  
Keyword(s):  
Thin Films ◽  
Alloy Design ◽  
Ceramic Thin Films ◽  
Toughness Enhancement

scholarly journals Evaluation of advanced austenitic alloys relative to alloy design criteria for steam service

1990 ◽  
Author(s):  
R. W. Swindeman ◽  
P. J. Maziasz ◽  
E. Bolling ◽  
J. F. King
Keyword(s):  
Alloy Design ◽  
Design Criteria ◽  
Austenitic Alloys

Critical Speed for Floppy Disks

1998 ◽  
Vol 65 (1) ◽  
pp. 116-120 ◽  
Author(s):  
A. A. Renshaw
Keyword(s):  
Thin Films ◽  
Free Vibration ◽  
Critical Speed ◽  
Transverse Motion ◽  
Design Criteria ◽  
Stability Prediction ◽  
Spinning Disk ◽  
Hydrodynamic Coupling ◽  
The Stability ◽  
Conventional Computer

This paper uses Lyapunov’s method to determine the critical speed of a flexible spinning disk enclosed in a housing that hydrodynamically couples the transverse motion of the disk to the motion of the thin films of air surrounding the disk. Depending on the clamping ratio, this critical speed is three to ten times higher than the critical speed in the absence of hydrodynamic coupling and does not depend on the strength of the hydrodynamic coupling. Despite the nonlinearity of the underlying model, the critical speed problem is linear and tractable. The linearized free-vibration problem is also computed to verify the stability prediction and to examine linearized damping and stiffness as possible design criteria. The results are relevant to the design of both conventional computer floppy disks and the emerging generation of 100+ MB floppies.

Alloy Design for Semi Solid Metal Forming

2014 ◽  
Vol 783-786 ◽  
pp. 136-141 ◽  
Author(s):  
Gonasagren Govender ◽  
Heinrich Möller ◽  
Ulyate Andries Curle
Keyword(s):  
Mechanical Properties ◽  
Heat Treatment ◽  
Metal Forming ◽  
Aluminium Alloys ◽  
Solid Metal ◽  
Alloy Design ◽  
Processing Temperature ◽  
Wide Range ◽  
Semi Solid ◽  
Alloy Systems

Semi-solid metal forming is more than 40 years old but its full potential to near net shape form high strength aluminium alloys has been realised only to a limited degree. Alloys developed for traditional manufacturing processes were initially used but it became apparent that alloys specific to SSM forming needed to be developed. The main alloy development criteria revolved around SSM processing temperature, solid fraction (fs) versus temperature sensitivity and age hardening potential. This methodology while sound does not fully address the unique processing behaviour of SSM forming. By its very nature SSM requires the controlled solidification of a part of the melt before forming. From basic solidification fundamentals this results in the enrichment of the remaining liquid with alloying elements. During the forming process segregation of liquid phase essentially produces a component with very different compositions in the regions where the liquid solidifies last. From recent work completed on a wide range of standard alloy systems it has become apparent that this segregation effect has a significant impact on aging behaviour and strength. Low melting point structures formed in the these regions result in localised melting in the grain boundary region and along areas of gross liquid segregation during solution heat treatment, contributing to the poor mechanical properties. Although this behaviour can be addressed using modified heat treatment, this cannot be applied to all current alloy systems. Alloy design for SSM forming must take these phenomena into account in order to develop and or specify aluminium alloys with acceptable mechanical properties.

Color and Color Stability as Alloy Design Criteria

JOM ◽  
1980 ◽  
Vol 32 (3) ◽  
pp. 20-27 ◽  
Author(s):  
Randall M. German ◽  
Matthew M. Guzowski ◽  
David C. Wright
Keyword(s):  
Color Stability ◽  
Alloy Design ◽  
Design Criteria

Review on the growth, properties and applications of self-assembled oxide–metal vertically aligned nanocomposite thin films—current and future perspectives

2021 ◽  
Author(s):  
Shikhar Misra ◽  
Haiyan Wang
Keyword(s):  
Thin Films ◽  
Recent Progress ◽  
Design Criteria ◽  
Future Perspectives ◽  
Nanocomposite Thin Films ◽  
Strain Compensation ◽  
Growth Properties ◽  
Vertically Aligned ◽  
Self Assembled ◽  
Metal Nanocomposites

This review summarizes the recent progress in self-assembled oxide-metal nanocomposites, their design criteria using the in-plane strain compensation model, functionalities, and the coupling between electrical, magnetic and optical properties

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Sign in / Sign up

Export Citation Format

Share Document