The Alignment and Fusion of Multimodal 3D Serial Sectioning Datasets

JOM ◽  
2021 ◽  
Author(s):  
L. T. Nguyen ◽  
D. J. Rowenhorst
Keyword(s):  
Serial Sectioning

Serial thin sectioning for pre- and post-embedding immunohistochemistry: Achieving consistent and reliable results for a 3-D reconstruction

1993 ◽  
Vol 51 ◽  
pp. 328-329
Author(s):  
Antonia M. Milroy
Keyword(s):  
Nervous System ◽  
Computer Assisted ◽  
Serial Sectioning ◽  
Electron Microscopic ◽  
High Quality ◽  
New Techniques ◽  
3 Dimensional ◽  
Multiple User ◽  
Thin Sectioning ◽  
Subcellular Level

In recent years many new techniques and instruments for 3-Dimensional visualization of electron microscopic images have become available. Higher accelerating voltage through thicker sections, photographed at a tilt for stereo viewing, or the use of confocal microscopy, help to analyze biological material without the necessity of serial sectioning. However, when determining the presence of neurotransmitter receptors or biochemical substances present within the nervous system, the need for good serial sectioning (Fig. 1+2) remains. The advent of computer assisted reconstruction and the possibility of feeding information from the specimen viewing chamber directly into a computer via a camera mounted on the electron microscope column, facilitates serial analysis. Detailed information observed at the subcellular level is more precise and extensive and the complexities of interactions within the nervous system can be further elucidated.We emphasize that serial ultra thin sectioning can be performed routinely and consistently in multiple user electron microscopy laboratories. Initial tissue fixation and embedding must be of high quality.

Analyzing the Impact of X-Ray Tomography on the Reliability of Integrated Circuits

2015 ◽  
Author(s):  
Halit Dogan ◽  
Md Mahbub Alam ◽  
Navid Asadizanjani ◽  
Sina Shahbazmohamadi ◽  
Domenic Forte ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
3D Imaging ◽  
Three Dimensional ◽  
Serial Sectioning ◽  
Promising Technique ◽  
Flash Memories ◽  
X Ray ◽  
3D Information ◽  
The Impact

Abstract X-ray tomography is a promising technique that can provide micron level, internal structure, and three dimensional (3D) information of an integrated circuit (IC) component without the need for serial sectioning or decapsulation. This is especially useful for counterfeit IC detection as demonstrated by recent work. Although the components remain physically intact during tomography, the effect of radiation on the electrical functionality is not yet fully investigated. In this paper we analyze the impact of X-ray tomography on the reliability of ICs with different fabrication technologies. We perform a 3D imaging using an advanced X-ray machine on Intel flash memories, Macronix flash memories, Xilinx Spartan 3 and Spartan 6 FPGAs. Electrical functionalities are then tested in a systematic procedure after each round of tomography to estimate the impact of X-ray on Flash erase time, read margin, and program operation, and the frequencies of ring oscillators in the FPGAs. A major finding is that erase times for flash memories of older technology are significantly degraded when exposed to tomography, eventually resulting in failure. However, the flash and Xilinx FPGAs of newer technologies seem less sensitive to tomography, as only minor degradations are observed. Further, we did not identify permanent failures for any chips in the time needed to perform tomography for counterfeit detection (approximately 2 hours).

Diffusion of Zinc in Two-Phase Mg-Al Alloy

2007 ◽  
Vol 263 ◽  
pp. 189-194
Author(s):  
Ivo Stloukal ◽  
Jiří Čermák
Keyword(s):  
Diffusion Coefficient ◽  
Diffusion Coefficients ◽  
Effective Diffusion ◽  
Residual Activity ◽  
Diffusion Path ◽  
Al Alloy ◽  
Serial Sectioning ◽  
Two Phase ◽  
Interphase Boundaries ◽  
The Mean

Coefficient of 65Zn heterodiffusion in Mg17Al12 intermetallic and in eutectic alloy Mg - 33.4 wt. % Al was measured in the temperature region 598 – 698 K using serial sectioning and residual activity methods. Diffusion coefficient of 65Zn in the intermetallic can be written as DI = 1.7 × 10-2 m2 s-1 exp (-155.0 kJ mol-1 / RT). At temperatures T ≥ 648 K, where the mean diffusion path was greater than the mean interlamellar distance in the eutectic, the effective diffusion coefficient Def = 2.7 × 10-2 m2 s-1 exp (-155.1 kJ mol-1 / RT) was evaluated. At two lower temperatures, the diffusion coefficients 65Zn in interphase boundaries were estimated: Db (623 K) = 1.6 × 10-12 m2 s-1 and Db (598 K) = 4.4 × 10-13 m2 s-1.

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