The effects of geometrical shape and impurity position on the self-polarization of a donor impurity in an infinite GaAs/AlAs tetragonal quantum dot

The binding energy of a shallow hydrogenic impurity of a spherical quantum dot confined by harmonic oscillator-like and by rectangular well-like potentials, using a variational procedure within the effective mass approximation, has been determined. The calculations of the binding energy of the donor impurity as a function of the system geometry, and the donor impurity position have been investigated. The binding energy of shallow donor impurity depends not only on the quantum confinements but also on the impurity position. Our results reveal that (i) the donor binding energy decreases as the dot size increases irrespective of the impurity position, and (ii) the binding energy values of rectangular confinement are larger than the values of parabolic confinement and (iii) the rectangular confinement is better than the parabolic confinement in a spherical quantum dot.

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Simultaneous effects of temperature, hydrostatic pressure and electric field on the self-polarization and electric field polarization in a GaAs/Ga0.7Al0.3As spherical quantum dot with a donor impurity

Superlattices and Microstructures ◽

10.1016/j.spmi.2013.03.020 ◽

2013 ◽

Vol 59 ◽

pp. 13-20 ◽

Cited By ~ 27

Author(s):

I. Erdogan ◽

O. Akankan ◽

H. Akbas

Keyword(s):

Hydrostatic Pressure ◽

Quantum Dot ◽

Electric Field ◽

The Self ◽

Donor Impurity ◽

Field Polarization ◽

Spherical Quantum Dot ◽

Electric Field Polarization ◽

Effects Of Temperature

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Binding energy of 2p-bound state of a hydrogenic donor impurity in a GaAs/Ga1−xAlxAs spherical quantum dot under hydrostatic pressure

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2014.06.020 ◽

2014 ◽

Vol 63 ◽

pp. 299-303 ◽

Cited By ~ 7

Author(s):

P. Bulut ◽

I. Erdogan ◽

H. Akbas

Keyword(s):

Hydrostatic Pressure ◽

Binding Energy ◽

Quantum Dot ◽

Bound State ◽

Donor Impurity ◽

Spherical Quantum Dot ◽

Hydrogenic Donor Impurity ◽

Hydrogenic Donor

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The Hydrogenic Donor Impurity Binding Energy of Quantum Dot in the Presence of an Electric Field

2012 International Conference on Computer Science and Electronics Engineering ◽

10.1109/iccsee.2012.423 ◽

2012 ◽

Author(s):

Guangxin Wang ◽

Xiuzhi Duan ◽

Wei Chen

Keyword(s):

Binding Energy ◽

Quantum Dot ◽

Electric Field ◽

Donor Impurity ◽

Hydrogenic Donor Impurity ◽

Hydrogenic Donor

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The magnetization and magnetic susceptibility of GaAs Gaussian quantum dot with donor impurity in a magnetic field

Modern Physics Letters B ◽

10.1142/s0217984919504220 ◽

2019 ◽

Vol 33 (34) ◽

pp. 1950422 ◽

Cited By ~ 1

Author(s):

Mohammad Elsaid ◽

Mohamoud Ali ◽

Ayham Shaer

Keyword(s):

Magnetic Field ◽

Magnetic Susceptibility ◽

Quantum Dot ◽

Theoretical Study ◽

Donor Impurity ◽

Confinement Potential ◽

Potential Depth ◽

Diagonalization Method ◽

Electron Quantum ◽

Exact Diagonalization Method

We present a theoretical study to investigate the effect of donor impurity on the magnetization (M) and the magnetic susceptibility [Formula: see text] of single electron quantum dot (QD) with Gaussian confinement in the presence of a magnetic field. We solve the Hamiltonian of this system, including the spin, by using the exact diagonalization method. The ground state binding energy (BE) of an electron has been shown as a function of QD radius and confinement potential depth. The behaviors of the magnetization and the magnetic susceptibility of a QD have been studied as a function of temperature, confinement potential depth, quantum radius and magnetic field. We have shown the effect of donor impurity on the magnetization and magnetic susceptibility curves of Gaussian quantum dot (GQD).

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