Comparative performance of the ultra-short channel technology for the DG-FinFET characteristics using different high-k dielectric materials

2020 ◽  
Author(s):  
Nassima Bourahla ◽  
Ahmed Bourahla ◽  
Baghdad Hadri
Keyword(s):  
Dielectric Materials ◽  
Short Channel ◽  
Comparative Performance ◽  
High K ◽  
High K Dielectric

scholarly journals Impact of High-k Dielectric Materials on Short Channel Effects in Tri-gate SOI FinFETs

2021 ◽  
Vol 13 (5) ◽  
pp. 05013-1-05013-6
Author(s):  
Zohmingmawia Renthlei ◽  
◽  
Swagat Nanda ◽  
Rudra Sankar Dhar ◽  
◽  
...  
Keyword(s):  
Dielectric Materials ◽  
Short Channel Effects ◽  
Short Channel ◽  
High K ◽  
Channel Effects ◽  
High K Dielectric

Impact of High-K Dielectric Materials on Performance Analysis of Underlap In0.17Al0.83N/GaN DG-MOSHEMTs

NANO ◽  
2019 ◽  
Vol 14 (05) ◽  
pp. 1950060 ◽  
Author(s):  
Sarosij Adak ◽  
Sanjit Kumar Swain
Keyword(s):  
High Speed ◽  
Dielectric Materials ◽  
Mobility Model ◽  
Oxide Material ◽  
Oxide Materials ◽  
Short Channel ◽  
High K ◽  
Channel Effects ◽  
High K Dielectric ◽  
Gan Heterostructure

This work systematically investigated the effect of high-[Formula: see text] oxide materials on the performance of InAlN/GaN heterostructure underlap double gate (DG) MOS-HEMTs by considering 2D Sentaurus TCAD simulation. During the course of simulation, hydrodynamic mobility model was implemented and the obtained results were used for validating the model with the previously published experimental results. Different device performance parameters are thoroughly studied for different high-[Formula: see text] oxide materials by performing extensive simulations. It is verified that short channel effects (SCEs), key analog and RF figures of merits parameters and [Formula: see text]th improved with an increase in the value of high-[Formula: see text] oxide material. Moreover, it is also revealed that there is a significant growth in the values of key analog and RF figures of merits with respect to high-[Formula: see text] values. This analysis suggested that use of a suitable value of high-[Formula: see text]-valued oxide material in InAlN/GaN heterostructure underlap DG MOS-HEMTs can be one of the alternatives for future high speed and microwave applications.

scholarly journals Analysis of on-off current ratio in asymmetrical junctionless double gate MOSFET using high-k dielectric materials

2021 ◽  
Vol 11 (5) ◽  
pp. 3882
Author(s):  
Hakkee Jung ◽  
Byungon Kim
Keyword(s):  
Dielectric Material ◽  
Dielectric Materials ◽  
Double Gate ◽  
Short Channel ◽  
Current Ratio ◽  
Arithmetic Average ◽  
High K ◽  
Double Gate Mosfet ◽  
High K Dielectric ◽  
High Dielectric

<span>The variation of the on-off current ratio is investigated when the asymmetrical junctionless double gate MOSFET is fabricated as a SiO<sub>2</sub>/high-k dielectric stacked gate oxide. The high dielectric materials have the advantage of reducing the short channel effect, but the rise of gate parasitic current due to the reduction of the band offset and the poor interface property with silicon has become a problem. To overcome this disadvantage, a stacked oxide film is used. The potential distributions are obtained from the Poission equation, and the threshold voltage is calculated from the second derivative method to obtain the on-current. As a result, this model agrees with the results from other papers. </span><span>The on-off current ratio is in proportion to the arithmetic average of the upper and lower high dielectric material thicknesses. The on-off current ratio of 10<sup>4</sup> or less is shown for SiO<sub>2</sub>, but the on-off current ratio for TiO<sub>2</sub> (<em>k</em>=80) increases to 10<sup>7</sup> or more.</span>

Redefining High-k Dielectric Materials Vision at Nanoscale for Energy Storage: A New Electrochemically Active Protection Barrier

2021 ◽  
pp. 138727
Author(s):  
Anthony Valero ◽  
Adrien Mery ◽  
Dorian Gaboriau ◽  
Marc Dietrich ◽  
Maggie Fox ◽  
...  
Keyword(s):  
Energy Storage ◽  
Dielectric Materials ◽  
High K ◽  
Electrochemically Active ◽  
Active Protection ◽  
High K Dielectric

Channel hot-carrier degradation in pMOS and nMOS short channel transistors with high-k dielectric stack

2010 ◽  
Vol 87 (1) ◽  
pp. 47-50 ◽  
Author(s):  
E. Amat ◽  
T. Kauerauf ◽  
R. Degraeve ◽  
R. Rodríguez ◽  
M. Nafría ◽  
...  
Keyword(s):  
Short Channel ◽  
Hot Carrier ◽  
High K ◽  
High K Dielectric ◽  
Hot Carrier Degradation
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