High performance thin film transistor with HfSiO x dielectric fabricated at room temperature RF-magnetron sputtering

2013 ◽  
Vol 9 (4) ◽  
pp. 381-384 ◽  
Author(s):  
Dongkyu Cho ◽  
Sanghyun Woo ◽  
Jungil Yang ◽  
Donghee Lee ◽  
Yoosung Lim ◽  
...  
2006 ◽  
Vol 89 (11) ◽  
pp. 112123 ◽  
Author(s):  
Hisato Yabuta ◽  
Masafumi Sano ◽  
Katsumi Abe ◽  
Toshiaki Aiba ◽  
Tohru Den ◽  
...  

2003 ◽  
Vol 82 (7) ◽  
pp. 1117-1119 ◽  
Author(s):  
P. F. Carcia ◽  
R. S. McLean ◽  
M. H. Reilly ◽  
G. Nunes

2019 ◽  
Vol 7 (48) ◽  
pp. 15383-15383
Author(s):  
Shun Han ◽  
Xiaoling Huang ◽  
Mingzhi Fang ◽  
Weiguo Zhao ◽  
Shijie Xu ◽  
...  

Correction for ‘High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering’ by Shun Han et al., J. Mater. Chem. C, 2019, 7, 11834–11844.


Author(s):  
Mohammad Nur E Alam ◽  
Wade Lonsdale ◽  
Mikhail Vasiliev ◽  
Kamal Alameh

We report on the development of several different thin-film functional material systems prepared by RF magnetron sputtering at Edith Cowan University nanofabrication labs. We conduct research on the design, prototyping, and practical fabrication of high-performance magneto-optic (MO) materials, oxide based sensor components, and heat regulation coatings for advanced construction and solar windows.


2019 ◽  
Vol 7 (38) ◽  
pp. 11834-11844 ◽  
Author(s):  
Shun Han ◽  
Xiaoling Huang ◽  
Mingzhi Fang ◽  
Weiguo Zhao ◽  
Shijie Xu ◽  
...  

Room-temperature-fabricated amorphous Ga2O3 is an inexpensive and highly sensitive material for high-performance solar-blind ultraviolet (UV) (220–280 nm) detectors, which are extremely useful given the widespread use of solar-blind UV photoelectronic technology.


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