Correction: High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

Correction for ‘High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering’ by Shun Han et al., J. Mater. Chem. C, 2019, 7, 11834–11844.

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High-performance UV detectors based on room-temperature deposited amorphous Ga2O3 thin films by RF magnetron sputtering

Journal of Materials Chemistry C ◽

10.1039/c9tc03613j ◽

2019 ◽

Vol 7 (38) ◽

pp. 11834-11844 ◽

Cited By ~ 6

Author(s):

Shun Han ◽

Xiaoling Huang ◽

Mingzhi Fang ◽

Weiguo Zhao ◽

Shijie Xu ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

High Performance ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Sensitive Material ◽

Uv Detectors ◽

Highly Sensitive ◽

Solar Blind

Room-temperature-fabricated amorphous Ga2O3 is an inexpensive and highly sensitive material for high-performance solar-blind ultraviolet (UV) (220–280 nm) detectors, which are extremely useful given the widespread use of solar-blind UV photoelectronic technology.

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Study of Photoluminescence Properties of CuxO Thin Films Prepared by Reactive Radio Frequency Magnetron Sputtering

MRS Proceedings ◽

10.1557/opl.2015.596 ◽

2015 ◽

Vol 1792 ◽

Author(s):

Jiantuo Gan ◽

Augustinas Galeckas ◽

Vishnukanthan Venkatachalapathy ◽

Heine N. Riise ◽

Bengt G. Svensson ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Room Temperature ◽

Quartz Substrate ◽

Rf Magnetron Sputtering ◽

Considerable Improvement ◽

Photoluminescence Properties ◽

Radio Frequency Magnetron Sputtering ◽

Room Temperature Photoluminescence

ABSTRACTCuxO thin films have been deposited on a quartz substrate by reactive radio frequency (rf) magnetron sputtering at different target powers Pt (140-190 W) while keeping other growth process parameters fixed. Room-temperature photoluminescence (PL) measurements indicate considerable improvement of crystallinity for the films deposited at Pt>170 W, with most pronounced excitonic features being observed in the film grown using Pt=190 W. These results corroborate well with the surface morphology of the films, which was found more flat, smooth and homogeneous for Pt >170 W films in comparison with those deposited at lower powers.

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Room-temperature RF magnetron sputtering deposition of hydrogenated Ga-doped ZnO thin films on PET substrates for PDLC devices

Applied Physics A ◽

10.1007/s00339-018-2276-z ◽

2018 ◽

Vol 124 (12) ◽

Cited By ~ 2

Author(s):

Chaoting Zhu ◽

Tianqi Zhou ◽

Feng Shi ◽

Weijie Song ◽

Jia Li ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Zno Thin Films ◽

Sputtering Deposition ◽

Doped Zno

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Structural, Optical and Magnetic Properties of Co and Fe Doped ZnO Thin Films Grown by Radio Frequency Magnetron Sputtering

MRS Proceedings ◽

10.1557/proc-0957-k10-51 ◽

2006 ◽

Vol 957 ◽

Author(s):

Luis Manuel Angelats ◽

Maharaj S Tomar ◽

Rahul Singhal ◽

Oscar P Perez ◽

Hector J Jimenez ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Visible Range ◽

Radio Frequency Magnetron Sputtering ◽

Optical And Magnetic Properties ◽

Doped Zno ◽

Xrd Patterns ◽

Antiferromagnetic Behavior

ABSTRACTZn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O targets were used to grow thin films by rf magnetron sputtering. XRD patterns of the films showed a strong preferred orientation along c-axis. Zn0.90Co0.10O film showed a transmittance above 75% in the visible range, while the transmittance of the Zn0.85[Co0.50Fe0.50]0.15O film was about 45%; with three absorption peaks attributed to d-d transitions of tetrahedrally coordinated Co2+. The band gap values for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films were 2.95 and 2.70 eV respectively, which are slightly less than ZnO bulk. The Zn0.90Co0.10O film showed a relatively large positive magnetoresistance (MR) at the high magnetic field in the temperature range from 7 to 50 K, which reached 11.9% a 7K for the magnetoresistance. The lowest MR was found at 100 K. From M-H curve measured at room temperature shown a probable antiferromagnetic behavior, although was possible to observe little coercive field of 30 Oe and 40 Oe for Zn0.90Co0.10O and Zn0.85[Co0.50Fe0.50]0.15O films, respectively.

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Silicon Germanium Oxide (SixGeyO1-x-y) Infrared Sensitive Material for Uncooled Detectors

MRS Proceedings ◽

10.1557/proc-1245-a18-04 ◽

2010 ◽

Vol 1245 ◽

Cited By ~ 1

Author(s):

Reza Anvari ◽

Qi Cheng ◽

Muhammad Lutful Hai ◽

Truc Phan Bui ◽

A. J. Syllaios ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Magnetron Sputtering ◽

Silicon Germanium ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Germanium Oxide ◽

Temperature Coefficient Of Resistance ◽

Sensitive Material

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.

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