Development of wide band gap p-a-SiOxCy:H using additional trimethylboron as carbon source gas

2016 ◽  
Vol 12 (4) ◽  
pp. 462-467 ◽  
Author(s):  
Dong-Won Kang ◽  
Porponth Sichanugrist ◽  
Bancha Janthong ◽  
Muhammad Ajmal Khan ◽  
Chisato Niikura ◽  
...  
1999 ◽  
Vol 606 ◽  
Author(s):  
C.-Y. Wen ◽  
J.-J. Wu ◽  
H.J. Lo ◽  
L.C. Chen ◽  
K.H. Chen ◽  
...  

AbstractContinuous polycrystalline SiCN films with high nucleation density have been successfully deposited by using CH3NH2, as carbon source gas in an ECR-CVD reactor. Fom the kinetic point of view, using CH3NH2, as carbon source could provide more abundant active carbon species in the gas phase to enhance the carbon incorporation in the SiCN films. The compositions of the SiCN films analyzed from Rutherford Backscattering Spectroscopy showed that higher [CH3NH2,]/[SiH4] ratio led to higher carbon content in the films. Moreover, a lower carbon content was measured when the film was deposited at higher substrate temperature. The direct band gap of the aforementioned SiCN films determined using PzR is around 4.4 eV, indicating a wide band gap material for blue-UV optoelectronics.


Author(s):  
Joanna L. Batstone

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.


Author(s):  
Raquel Caballero ◽  
Leonor de la Cueva ◽  
Andrea Ruiz-Perona ◽  
Yudenia Sánchez ◽  
Markus Neuschitzer ◽  
...  

2013 ◽  
Vol 28 (6) ◽  
pp. 671-676 ◽  
Author(s):  
Yu-Qing ZHANG ◽  
Li-Li ZHAO ◽  
Shi-Long XU ◽  
Chao ZHANG ◽  
Xiao-Ying CHEN ◽  
...  

2021 ◽  
Vol 499 ◽  
pp. 229961
Author(s):  
Meiling Zhang ◽  
Xiaopeng Xu ◽  
Liyang Yu ◽  
Qiang Peng

Author(s):  
Armin Jafari ◽  
Mohammad Samizadeh Nikoo ◽  
Nirmana Perera ◽  
Furkan Karakaya ◽  
Reza Soleimanzadeh ◽  
...  

2021 ◽  
Vol 868 ◽  
pp. 159253
Author(s):  
Andrea Ruiz-Perona ◽  
Galina Gurieva ◽  
Michael Sun ◽  
Tim Kodalle ◽  
Yudania Sánchez ◽  
...  

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