Effect of Bipolar Charging of SiH4 on the Growth Rate and Crystallinity of Silicon Films Grown in the Atmospheric Pressure Chemical Vapor Deposition Process

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Deposition Process ◽

Silicon Films ◽

Pressure Chemical ◽

Gas-Phase Nucleation in an Atmospheric Pressure Chemical Vapor Deposition Process for SiO2Films Using Tetraethylorthosilicate (TEOS)

Japanese Journal of Applied Physics ◽

10.1143/jjap.31.l1439 ◽

1992 ◽

Vol 31 (Part 2, No. 10A) ◽

pp. L1439-L1442 ◽

Cited By ~ 27

Author(s):

Motoaki Adachi ◽

Kikuo Okuyama ◽

Noboru Tohge ◽

Manabu Shimada ◽

Jun-ichi Satoh ◽

...

Keyword(s):

Gas Phase ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Deposition Process ◽

Pressure Chemical ◽

Phase Nucleation ◽

Scalable high-mobility MoS2thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

Nanoscale ◽

10.1039/c4nr04228j ◽

2014 ◽

Vol 6 (21) ◽

pp. 12792-12797 ◽

Cited By ~ 50

Author(s):

Chung-Che Huang ◽

Feras Al-Saab ◽

Yudong Wang ◽

Jun-Yu Ou ◽

John C. Walker ◽

...

Keyword(s):

Ambient Temperature ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

High Mobility ◽

Chemical Vapor ◽

Deposition Process ◽

Pressure Chemical ◽

Using an Atmospheric Pressure Chemical Vapor Deposition Process for the Development of V2O5 as an Electrochromic Material

Coatings ◽

10.3390/coatings7020024 ◽

2017 ◽

Vol 7 (2) ◽

pp. 24 ◽

Cited By ~ 6

Author(s):

Dimitra Vernardou

Keyword(s):

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Deposition Process ◽

Electrochromic Material ◽

Pressure Chemical ◽

Numerical Simulations of Films Formed by Cluster/Particle Co-Deposition in Atmospheric-Pressure Chemical Vapor Deposition Process Using Organic Silicon Vapors and Ozone Gas

Japanese Journal of Applied Physics ◽

10.1143/jjap.39.3542 ◽

2000 ◽

Vol 39 (Part 1, No. 6A) ◽

pp. 3542-3548 ◽

Cited By ~ 6

Author(s):

Motoaki Adachi ◽

Toshiyuki Fujimoto ◽

Yoshifumi Itoh ◽

Kikuo Okuyama

Keyword(s):

Numerical Simulations ◽

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Deposition Process ◽

Organic Silicon ◽

Pressure Chemical ◽

ANALYSIS OF HEAT AND MASS TRANSFER DURING MULTI-WAFER LOW PRESSURE CHEMICAL VAPOR DEPOSITION PROCESS

Proceeding of International Heat Transfer Conference 11 ◽

10.1615/ihtc11.240 ◽

1998 ◽

Author(s):

K.S. Park ◽

M. Choi

Keyword(s):

Mass Transfer ◽

Heat And Mass Transfer ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Low Pressure ◽

Pressure Chemical ◽

Improved ultrathin oxynitride formed by thermal nitridation and low pressure chemical vapor deposition process

Applied Physics Letters ◽

10.1063/1.108428 ◽

1992 ◽

Vol 61 (15) ◽

pp. 1790-1792 ◽

Cited By ~ 13

Author(s):

Bikas Maiti ◽

Ming Yin Hao ◽

Insup Lee ◽

Jack C. Lee

Keyword(s):

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Low Pressure ◽

Pressure Chemical ◽

Thermal Nitridation ◽

The use of silver(I)-2-[2-(2-methoxyethoxy)ethoxy]acetate as precursor in the deposition of thin silver layers on float glass by the atmospheric pressure combustion chemical vapor deposition process

Thin Solid Films ◽

10.1016/j.tsf.2010.05.082 ◽

2010 ◽

Vol 518 (20) ◽

pp. 5741-5744 ◽

Cited By ~ 17

Author(s):

Thomas Struppert ◽

Alexander Jakob ◽

Andreas Heft ◽

Bernd Grünler ◽

Heinrich Lang

Keyword(s):

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Deposition Process ◽

Float Glass ◽

Real-time growth rate metrology for a tungsten chemical vapor deposition process by acoustic sensing

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1340656 ◽

2001 ◽

Vol 19 (2) ◽

pp. 621-626 ◽

Cited By ~ 7

Author(s):

L. Henn-Lecordier ◽

J. N. Kidder ◽

G. W. Rubloff ◽

C. A. Gogol ◽

A. Wajid

Keyword(s):

Growth Rate ◽

Real Time ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Acoustic Sensing ◽

4456978 Electrically alterable read only memory semiconductor device made by low pressure chemical vapor deposition process

Microelectronics Reliability ◽

10.1016/0026-2714(85)90470-6 ◽

1985 ◽

Vol 25 (1) ◽

pp. 204

Author(s):

RichardM Morley ◽

JagirS Multani ◽

J Sandhu

Keyword(s):

Vapor Deposition ◽

Semiconductor Device ◽

Chemical Vapor ◽

Deposition Process ◽

Low Pressure ◽

Pressure Chemical ◽

Read Only Memory ◽

Novel chemical vapor deposition process of ZnO films using nonequilibrium N2 plasma generated near atmospheric pressure with small amount of O2 below 1%

Journal of Applied Physics ◽

10.1063/1.4948326 ◽

2016 ◽

Vol 119 (17) ◽

pp. 175302 ◽

Cited By ~ 3

Author(s):

Yukinori Nose ◽

Takeshi Yoshimura ◽

Atsushi Ashida ◽

Tsuyoshi Uehara ◽

Norifumi Fujimura

Keyword(s):

Vapor Deposition ◽

Atmospheric Pressure ◽

Chemical Vapor ◽

Deposition Process ◽

Zno Films ◽

N2 Plasma ◽