Low temperature radio frequency shielding of exfoliated graphite

Cryogenics ◽  
1994 ◽  
Vol 34 (11) ◽  
pp. 957-958 ◽  
Author(s):  
M. Rall ◽  
M.D. Evans ◽  
P.M. Andersen ◽  
N.S. Sullivan
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Exfoliated Graphite

Fluid and kinetic models of the low temperature H2 plasma produced by a radio-frequency reactor

2008 ◽  
Vol 15 (10) ◽  
pp. 103505 ◽  
Author(s):  
P. Diomede ◽  
A. Michau ◽  
M. Redolfi ◽  
W. Morscheidt ◽  
K. Hassouni ◽  
...  
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Kinetic Models

Low-Temperature Baking Effect of the Radio-Frequency Nb3Sn Thin Film Superconducting Cavity

2021 ◽  
Vol 38 (9) ◽  
pp. 092901
Author(s):  
Ziqin Yang ◽  
Shichun Huang ◽  
Yuan He ◽  
Xiangyang Lu ◽  
Hao Guo ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Radio Frequency ◽  
Superconducting Cavity

scholarly journals Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4046
Author(s):  
Guo-Dong Hao ◽  
Manabu Taniguchi ◽  
Shin-ichiro Inoue
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
Hexagonal Boron Nitride ◽  
Annealing Treatment ◽  
Optical Transmittance ◽  
Hexagonal Structure ◽  
Light Transmittance ◽  
Radio Frequency Sputtering ◽  
Deep Ultraviolet ◽  
Deposition Processes

Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al0.7Ga0.3N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N2) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N2 ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices.

scholarly journals High quality Al0.37In0.63N layers grown at low temperature (<300 °C) by radio-frequency sputtering

2019 ◽  
Vol 100 ◽  
pp. 8-14 ◽  
Author(s):  
A. Núñez-Cascajero ◽  
R. Blasco ◽  
S. Valdueza-Felip ◽  
D. Montero ◽  
J. Olea ◽  
...  
Keyword(s):  
Low Temperature ◽  
Radio Frequency ◽  
High Quality ◽  
Radio Frequency Sputtering

Characterization of reduced graphene oxide obtained from vacuum-assisted low-temperature exfoliated graphite

2018 ◽  
Vol 24 (12) ◽  
pp. 5007-5016 ◽  
Author(s):  
Subash C. B. Gopinath ◽  
Periasamy Anbu ◽  
Thirugnanasambandan Theivasanthi ◽  
M. K. Md Arshad ◽  
Thangavel Lakshmipriya ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Low Temperature ◽  
Reduced Graphene Oxide ◽  
Exfoliated Graphite ◽  
Reduced Graphene

Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE

2001 ◽  
Vol 693 ◽  
Author(s):  
Tomohiro Yamaguchi ◽  
Yoshiki Saito ◽  
Kenji Kano ◽  
Tomo Muramatsu ◽  
Tsutomu Araki ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Radio Frequency ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Radio Frequency Plasma ◽  
Single Crystalline ◽  
Nitridation Process ◽  
Frequency Plasma ◽  
Step Growth

AbstractInN films were grown on sapphire (0001) substrates by radio-frequency plasma-assisted molecular beam epitaxy. The InN buffer layers deposited at low temperature were either grown on a substrate with nitridation or on a substrate without nitridation. The InN buffer layers on the nitridated substrates were always single crystalline, whereas the buffer layers on non-nitridated substrates were always polycrystalline. However, even without nitridation process, single crystalline InN films could be grown on the polycrystalline InN buffer layers; in this case, the orientation was always [1120] InN//[1120] sapphire epitaxy, which differed from the [1010] InN//[1120] sapphire epitaxy in films grown with nitridation.

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