scholarly journals Highly Deep Ultraviolet–Transparent h-BN Film Deposited on an Al0.7Ga0.3N Template by Low-Temperature Radio-Frequency Sputtering

Materials ◽  
2019 ◽  
Vol 12 (24) ◽  
pp. 4046
Author(s):  
Guo-Dong Hao ◽  
Manabu Taniguchi ◽  
Shin-ichiro Inoue

Hexagonal boron nitride (h-BN) is an attractive wide-bandgap material for application to emitters and detectors operating in the deep ultraviolet (DUV) spectral region. The optical transmittance of h-BN in the DUV region is particularly important for these devices. We report on the deposition of thick h-BN films (>200 nm) on Al0.7Ga0.3N templates via radio-frequency sputtering, along with the realization of ultrahigh transmittance in the DUV region. The fraction of the gas mixture (Ar/N2) was varied to investigate its effects on the optical transmittance of BN. DUV light transmittance of as high as 94% was achieved at 265 nm. This value could be further enhanced to exceed 98% by a post-annealing treatment at 800 °C in a N2 ambient for 20 min. The phase of the highly DUV–transparent BN film was determined to be a purely hexagonal structure via Raman spectra measurements. More importantly, these deposition processes were performed at a low temperature (300 °C), which can provide protection from device performance degradation when applied to actual devices.

2019 ◽  
Vol 100 ◽  
pp. 8-14 ◽  
Author(s):  
A. Núñez-Cascajero ◽  
R. Blasco ◽  
S. Valdueza-Felip ◽  
D. Montero ◽  
J. Olea ◽  
...  

CrystEngComm ◽  
2014 ◽  
Vol 16 (16) ◽  
pp. 3359-3365 ◽  
Author(s):  
T. M. A. Bui ◽  
H. Le Trong ◽  
L. Presmanes ◽  
A. Barnabé ◽  
C. Bonningue ◽  
...  

Co1.7Fe1.3O4 thin films are submitted to spinodal transformation after annealing at low temperature.


2007 ◽  
Vol 90 (18) ◽  
pp. 181110 ◽  
Author(s):  
F. Michelotti ◽  
R. Canali ◽  
L. Dominici ◽  
A. Belardini ◽  
F. Menchini ◽  
...  

Nanoscale ◽  
2017 ◽  
Vol 9 (41) ◽  
pp. 15934-15944 ◽  
Author(s):  
Sun Jun Kim ◽  
Byeongho Park ◽  
Seung Hyo Noh ◽  
Hyong Seo Yoon ◽  
Juyeong Oh ◽  
...  

Graphene on h-BN showed nonlinear characteristic considerably in radio frequency signal transmission under low temperature.


2018 ◽  
Vol 646 ◽  
pp. 209-215 ◽  
Author(s):  
Zhang Song ◽  
Tiphaine Bourgeteau ◽  
Itaru Raifuku ◽  
Yvan Bonnassieux ◽  
Erik Johnson ◽  
...  

2021 ◽  
Vol 11 (15) ◽  
pp. 6990
Author(s):  
Erick Gastellóu ◽  
Godofredo García ◽  
Ana María Herrera ◽  
Crisoforo Morales ◽  
Rafael García ◽  
...  

GaN films doped with Mg or Zn were obtained via radio-frequency magnetron sputtering on silicon substrates at room temperature and used laboratory-prepared targets with Mg-doped or Zn-doped GaN powders. X-ray diffraction patterns showed broadening peaks, which could have been related to the appearance of nano-crystallites with an average of 7 nm. Scanning electron microscopy and transmission electron microscopy showed good adherence to silicon non-native substrate, as well as homogeneity, with a grain size average of 0.14 µm, and 0.16 µm for the GaN films doped with Zn or Mg, respectively. X-ray photo-electron spectroscopy demonstrated the presence of a very small amount of magnesium (2.10 mol%), and zinc (1.15 mol%) with binding energies of 1303.18, and 1024.76 eV, respectively. Photoluminescence spectrum for the Zn-doped GaN films had an emission range from 2.89 to 3.0 eV (429.23–413.50 nm), while Mg-doped GaN films had an energy emission in a blue-violet band with a range from 2.80 to 3.16 eV (443.03–392.56 nm). Raman spectra showed the classical vibration modes A1(TO), E1(TO), and E2(High) for the hexagonal structure of GaN.


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