Numerical modeling of diffusive-convective physical vapor transport in cylindrical vertical ampoules

We have studied the impact of the chemical nature of additional gases fed into the modified physical vapor transport (M-PVT) growth cell. In particular experiments were carried out using helium, argon, nitrogen and propane in the growth setup. Numerical modeling was used to address the underlying physical and chemical effects that impact the global temperature field. It is found that chemical decomposition of complex gases plays a secondary role as heat source or sink. However, temperature variations related to varying gas compositions fed to the systems are primarily induced by changes of the graphite foam isolation properties.

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PVT Growth of 6H SiC Crystals and Defect Characterization

MRS Proceedings ◽

10.1557/proc-815-j5.31 ◽

2004 ◽

Vol 815 ◽

Cited By ~ 4

Author(s):

Govindhan Dhanaraj ◽

Feng Liu ◽

Michael Dudley ◽

Hui Zhang ◽

Vish Prasad

Keyword(s):

Numerical Modeling ◽

Temperature Field ◽

Single Crystals ◽

Chemical Etching ◽

Growth Parameters ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Defect Characterization ◽

Sublimation Method ◽

Hot Zone

AbstractSiC single crystals have been grown by seeded sublimation method using physical vapor transport (PVT) system designed and fabricated in our laboratory. A novel multi-segmented graphite insulation has been used for improved heat containment in the hot-zone. Numerical modeling was used to obtain the temperature field and predict various growth parameters. The grown crystals were characterized using AFM, SWBXT and chemical etching.

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Numerical modeling of diffusive physical vapor transport in cylindrical ampoules

Journal of Crystal Growth ◽

10.1016/0022-0248(81)90418-8 ◽

1981 ◽

Vol 51 (3) ◽

pp. 413-425 ◽

Cited By ~ 84

Author(s):

D.W. Greenwell ◽

B.L. Markham ◽

F. Rosenberger

Keyword(s):

Numerical Modeling ◽

Vapor Transport ◽

Physical Vapor Transport

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Interaction of surface radiation with convection in crystal growth by physical vapor transport

10.2514/6.1989-228 ◽

1989 ◽

Author(s):

MOHAMMAD KASSEMI ◽

WALTER DUVAL

Keyword(s):

Crystal Growth ◽

Vapor Transport ◽

Surface Radiation ◽

Physical Vapor Transport

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Knoop Hardness on the (0001) Plane of 4H and 6H SiC Single Crystals Fabricated by Physical Vapor Transport

10.21236/ada600386 ◽

2014 ◽

Author(s):

Jeffrey J. Swab ◽

James W. McCauley ◽

Brady Butler ◽

Daniel Snoha ◽

Donovan Harris ◽

...

Keyword(s):

Single Crystals ◽

Knoop Hardness ◽

Vapor Transport ◽

Physical Vapor Transport

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High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

Functional Materials Letters ◽

10.1142/s1793604719500322 ◽

2019 ◽

Vol 12 (03) ◽

pp. 1950032 ◽

Cited By ~ 2

Author(s):

Yuchen Deng ◽

Yaming Zhang ◽

Nanlong Zhang ◽

Qiang Zhi ◽

Bo Wang ◽

...

Keyword(s):

Thermal Conductivity ◽

Silicon Carbide ◽

Grain Size ◽

Phase Composition ◽

Room Temperature ◽

Vapor Transport ◽

Physical Vapor Transport ◽

Growth Substrate ◽

Sic Ceramics ◽

Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

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