Low pressure MOVPE growth of Si-doped Ga0.5In0.5P using Si2H6

1988 ◽  
Vol 93 (1-4) ◽  
pp. 618-623 ◽  
Author(s):  
Hitoshi Hotta ◽  
Isao Hino ◽  
Tohru Suzuki
Keyword(s):  
Low Pressure ◽  
Movpe Growth ◽  
Si Doped

Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy

2011 ◽  
Vol 50 (9) ◽  
pp. 095502 ◽  
Author(s):  
Yuki Shimahara ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu ◽  
Fumitsugu Fukuyo ◽  
Tomoyuki Okada ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Low Pressure ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
High Quality ◽  
Si Doped

Low pressure MOVPE growth and characterization of ZnTe homoepitaxial layers

2016 ◽  
Vol 13 (7-9) ◽  
pp. 439-442 ◽  
Author(s):  
Mitsuhiro Nishio ◽  
Katsuhiko Saito ◽  
Masakatsu Abiru ◽  
Eiichiro Mori ◽  
Yasuhiro Araki ◽  
...  
Keyword(s):  
Low Pressure ◽  
Movpe Growth ◽  
Homoepitaxial Layers

Atmospheric and low pressure shadow masked MOVPE growth of InGaAs(P)/InP and (In)GaAs/(Al)GaAs heterostructures and quantum wells

1994 ◽  
Vol 23 (2) ◽  
pp. 225-232 ◽  
Author(s):  
G. Coudenys ◽  
I. Moeeman ◽  
G. Vermeire ◽  
F. Vermaerke ◽  
Y. Zhu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Low Pressure ◽  
Movpe Growth ◽  
Pressure Shadow

Low-pressure MOVPE growth of Sn-doped GaAs

1983 ◽  
Vol 19 (25-26) ◽  
pp. 1062 ◽  
Author(s):  
A.P. Roth ◽  
R. Yakimova ◽  
V.S. Sundaram
Keyword(s):  
Low Pressure ◽  
Movpe Growth

MOVPE growth of Si-doped GaN cap layers embedding GaN nanowires with multiple-quantum shells

2021 ◽  
pp. 126423
Author(s):  
Koji Okuno ◽  
Koichi Mizutani ◽  
Kazuyoshi Iida ◽  
Masaki Ohya ◽  
Naoki Sone ◽  
...  
Keyword(s):  
Multiple Quantum ◽  
Gan Nanowires ◽  
Movpe Growth ◽  
Si Doped
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