Low pressure MOVPE growth and characterization of ZnTe homoepitaxial layers

2016 ◽  
Vol 13 (7-9) ◽  
pp. 439-442 ◽  
Author(s):  
Mitsuhiro Nishio ◽  
Katsuhiko Saito ◽  
Masakatsu Abiru ◽  
Eiichiro Mori ◽  
Yasuhiro Araki ◽  
...  
Keyword(s):  
Low Pressure ◽  
Movpe Growth ◽  
Homoepitaxial Layers

Low-pressure MOVPE growth and characterization of strained-layer InGaAs-InGaAsP quantum well lasers

1992 ◽  
Vol 18 (1-2) ◽  
pp. 57-74 ◽  
Author(s):  
P.J.A Thijs ◽  
J.J.M Binsma ◽  
L.F Tiemeijer ◽  
P.I Kuindersma ◽  
T van Dongen
Keyword(s):  
Quantum Well ◽  
Low Pressure ◽  
Quantum Well Lasers ◽  
Strained Layer ◽  
Movpe Growth

Preparation and Characterization of Ni-La-B Amorphous Alloy Catalyst for Low-Pressure Dinitrotoluene Hydrogenation

2013 ◽  
Vol 33 (8) ◽  
pp. 1374-1382
Author(s):  
Shaowei YAN ◽  
Hui FAN ◽  
Chuan LIANG ◽  
Zhong LI ◽  
Zhihui YU
Keyword(s):  
Amorphous Alloy ◽  
Low Pressure ◽  
Alloy Catalyst

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

scholarly journals Characterization of TiN film grown by low-pressure-chemical-vapor-deposition

1997 ◽  
Vol 308-309 ◽  
pp. 594-598 ◽  
Author(s):  
Y.J Mei ◽  
T.C Chang ◽  
J.C Hu ◽  
L.J Chen ◽  
Y.L Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Tin Film ◽  
Pressure Chemical

Bulk Characterization of Pharmaceutical Powders by Low-Pressure Compression

2005 ◽  
Vol 10 (2) ◽  
pp. 197-209 ◽  
Author(s):  
Arne Hagsten Sørensen ◽  
Jørn Møller Sonnergaard ◽  
Lars Hovgaard
Keyword(s):  
Low Pressure ◽  
Pharmaceutical Powders

Characterization of the Electrode Erosion by Spectrum Analysis at low Pressure Gas-Discharge Lamps

2008 ◽  
Author(s):  
Dj. Boubetra ◽  
M. Bouafia ◽  
El-Hachemi Amara ◽  
Saïd Boudjemai ◽  
Djamila Doumaz
Keyword(s):  
Spectrum Analysis ◽  
Low Pressure ◽  
Gas Discharge ◽  
Electrode Erosion
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