Transmission electron microscopic evaluation of metalorganic chemical vapor deposition-grown CdTe crystals on sapphire substrates

1992 ◽  
Vol 117 (1-4) ◽  
pp. 266-270
Author(s):  
O. Ueda ◽  
K. Maruyama ◽  
A. Hobbs ◽  
K. Shinohara
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Electron Microscopic ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Microscopic Evaluation ◽  
Transmission Electron Microscopic ◽  
Metalorganic Chemical

Microstructures of GaN Films Grown on a LiGaO2 New Substrate by Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 468 ◽  
Author(s):  
Jing-Hong Li ◽  
Olga M. Kryliouk ◽  
Paul H. Holloway ◽  
Timothy J. Anderson ◽  
Kevin S. Jones
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
Transmission Electron ◽  
Metalorganic Chemical

ABSTRACTMicrostructures of GaN films grown on the LiGaO2 by metalorganic chemical vapor deposition (MOCVD) have been characterized by transmission electron microscopy (TEM) and high resolution transmission electron microscopy (HRTEM). TEM and HRTEM results show that high quality single-crystal wurtzite GaN films have been deposited on the LiGaO2 and that the GaN film and the LiGaO2 have the following orientation relationship: (2110)(0002)GaN ̂ (002)LiGaO2 ^ 5–8°. A higher density of threading dislocations and stacking faults have been observed near the GáN/LiGaO2 interface, even though the lattice mismatch of GaN to LiGaO2 is only ∼1%. Threading dislocations with burgers vector b=<0001> and b=a/3<1120> are predominant in the GaN films. Also the GaN films contain some columnar inversion domain boundaries (IDBs). Both TEM and HRTEM results reveal that there is an unexpected amorphous or nano-crystalline inter-layer between the GaN and the LiGaO2 with a thickness of 50–100 nm.

Characteristics of Gallium Oxide Nanowires Synthesized by the Metalorganic Chemical Vapor Deposition

2007 ◽  
Vol 539-543 ◽  
pp. 1230-1235 ◽  
Author(s):  
Hyoun Woo Kim ◽  
S.H. Shim
Keyword(s):  
Chemical Vapor Deposition ◽  
Cross Sections ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

We have synthesized the high-density Ga2O3 nanowires on gold (Au)-coated silicon substrates using metalorganic chemical vapor deposition. The nanowires exhibited one-dimensional structures having circular cross sections with diameters in the range of 30-200 nm. The energy dispersive x-ray spectroscopy revealed that the nanowires contained elements of Ga and O, without Au-related impurities. X-ray diffraction analysis and high-resolution transmission electron microscopy showed that the Ga2O3 nanowires were crystalline.

Detection and Analysis of Phase Separation in Metalorganic Chemical Vapor Deposition InGaN

1997 ◽  
Vol 482 ◽  
Author(s):  
E. L. Piner ◽  
N. A. El-Masry ◽  
S. X. Liu ◽  
S. M. Bedair
Keyword(s):  
Chemical Vapor Deposition ◽  
Phase Separation ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Single Phase ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Metalorganic Chemical

AbstractInGaN films in the 0–50% InN composition range have been analyzed for the occurrence of phase separation. The ñ0.5 jum thick InGaN films were grown by metalorganic chemical vapor deposition (MOCVD) in the 690 to 780°C temperature range and analyzed by θ−20 x-ray diffraction (XRD), transmission electron microscopy (TEM), and selected area diffraction (SAD). As-grown films with up to 21% InN were single phase. However, for films with 28% InN and higher, the samples showed a spinodally decomposed microstructure as confirmed by TEM and extra spots in SAD patterns that corresponded to multiphase InGaN. An explanation of the data based on the GaN-InN pseudo-binary phase diagram is discussed.

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